FR2328509B1 - - Google Patents
Info
- Publication number
- FR2328509B1 FR2328509B1 FR7623756A FR7623756A FR2328509B1 FR 2328509 B1 FR2328509 B1 FR 2328509B1 FR 7623756 A FR7623756 A FR 7623756A FR 7623756 A FR7623756 A FR 7623756A FR 2328509 B1 FR2328509 B1 FR 2328509B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/916—Oxygen testing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/624,618 US4040895A (en) | 1975-10-22 | 1975-10-22 | Control of oxygen in silicon crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2328509A1 FR2328509A1 (fr) | 1977-05-20 |
| FR2328509B1 true FR2328509B1 (US20090192370A1-20090730-C00001.png) | 1979-07-06 |
Family
ID=24502676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7623756A Granted FR2328509A1 (fr) | 1975-10-22 | 1976-07-28 | Procede pour faire croitre un barreau de materiau cristallin, notamment silicium avec une teneur en oxygene controlee |
Country Status (7)
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2758888C2 (de) * | 1977-12-30 | 1983-09-22 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Siliciumeinkristalle |
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| EP0042901B1 (fr) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski |
| DE3170781D1 (en) * | 1980-12-29 | 1985-07-04 | Monsanto Co | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
| US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
| US4545849A (en) * | 1983-03-03 | 1985-10-08 | Motorola Inc. | Method for control of oxygen in silicon crystals |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| JPH0699223B2 (ja) * | 1989-09-19 | 1994-12-07 | 信越半導体株式会社 | シリコン単結晶引上げ方法 |
| US5215620A (en) * | 1989-09-19 | 1993-06-01 | Shin-Etsu Handotai Co. Ltd. | Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate |
| JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
| US5135218A (en) * | 1990-12-21 | 1992-08-04 | Mcgovern James R | Pool game table |
| JPH0532480A (ja) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
| EP0668613A1 (en) * | 1993-09-09 | 1995-08-23 | Soviet-German Joint Venture "Mamt" | Method of determining the concentration of oxygen in silicon crystals |
| US5474020A (en) * | 1994-05-06 | 1995-12-12 | Texas Instruments Incorporated | Oxygen precipitation control in czochralski-grown silicon cyrstals |
| US5820672A (en) * | 1994-05-09 | 1998-10-13 | Texas Instruments Incorporated | OISF control in czochralski-grown crystals |
| US5593498A (en) * | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
| US5795381A (en) * | 1996-09-09 | 1998-08-18 | Memc Electrical Materials, Inc. | SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon |
| EP0879903B1 (en) | 1997-05-21 | 2001-12-12 | Shin-Etsu Handotai Company Limited | Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon monocrystal through use of the seed crystal |
| US5911825A (en) * | 1997-09-30 | 1999-06-15 | Seh America, Inc. | Low oxygen heater |
| EP0947611A3 (en) * | 1998-03-17 | 2002-03-20 | Shin-Etsu Handotai Company Limited | A method for producing a silicon single crystal and the silicon single crystal produced thereby |
| CN1324166C (zh) | 2002-11-12 | 2007-07-04 | Memc电子材料有限公司 | 利用坩锅旋转以控制温度梯度的制备单晶硅的方法 |
| CN101935871A (zh) * | 2010-09-04 | 2011-01-05 | 山西天能科技有限公司 | 一种降低单晶硅位错的方法 |
| CN102011178B (zh) * | 2010-12-30 | 2012-10-03 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
| CN107268080B (zh) * | 2017-07-06 | 2019-08-02 | 锦州神工半导体股份有限公司 | 一种大直径无双棱线单晶硅的提拉生长方法 |
| CN109576785A (zh) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | 调节单晶硅生长过程中氧含量的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3353914A (en) * | 1964-12-30 | 1967-11-21 | Martin Marietta Corp | Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof |
| NL145151B (nl) * | 1965-08-05 | 1975-03-17 | Tno | Werkwijze en inrichting voor zonesmelten. |
| US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
| US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
-
1975
- 1975-10-22 US US05/624,618 patent/US4040895A/en not_active Expired - Lifetime
-
1976
- 1976-07-28 FR FR7623756A patent/FR2328509A1/fr active Granted
- 1976-09-03 DE DE2639707A patent/DE2639707C2/de not_active Expired
- 1976-09-16 GB GB38428/76A patent/GB1519725A/en not_active Expired
- 1976-09-17 IT IT27309/76A patent/IT1068285B/it active
- 1976-09-29 JP JP51116085A patent/JPS5252185A/ja active Granted
- 1976-10-20 CA CA263,823A patent/CA1067800A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1519725A (en) | 1978-08-02 |
| DE2639707C2 (de) | 1983-08-18 |
| JPS5252185A (en) | 1977-04-26 |
| CA1067800A (en) | 1979-12-11 |
| JPS5329677B2 (US20090192370A1-20090730-C00001.png) | 1978-08-22 |
| IT1068285B (it) | 1985-03-21 |
| DE2639707A1 (de) | 1977-04-28 |
| FR2328509A1 (fr) | 1977-05-20 |
| US4040895A (en) | 1977-08-09 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |