Classifications

• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
  • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
  • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
  • G01L1/00—Measuring force or stress, in general
  • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
  • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
  • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
  • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
  • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
  • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
  • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
  • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
  • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
  • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
  • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
  • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Acoustics & Sound (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Ceramic Engineering (AREA)
• Chemical & Material Sciences (AREA)
• Computer Hardware Design (AREA)
• Analytical Chemistry (AREA)
• Signal Processing (AREA)
• Measuring Fluid Pressure (AREA)
• Pressure Sensors (AREA)
• Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
• Semiconductor Integrated Circuits (AREA)
• Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=24483643

Family Applications (1)

Country Status (7)

Families Citing this family (8)

Family Cites Families (4)

• 1976
  • 1976-10-02 DE DE19762644638 patent/DE2644638A1/de active Granted
  • 1976-10-05 FR FR7629945A patent/FR2327528A1/fr active Granted
  • 1976-10-05 SE SE7611020A patent/SE414096B/xx not_active IP Right Cessation
  • 1976-10-05 CA CA262,776A patent/CA1088664A/en not_active Expired
  • 1976-10-06 IT IT5161176A patent/IT1073874B/it active
  • 1976-10-06 GB GB4138876A patent/GB1558815A/en not_active Expired
  • 1976-10-06 JP JP11947576A patent/JPS6032993B2/ja not_active Expired

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