FR2322456B1 - - Google Patents

Info

Publication number
FR2322456B1
FR2322456B1 FR7626212A FR7626212A FR2322456B1 FR 2322456 B1 FR2322456 B1 FR 2322456B1 FR 7626212 A FR7626212 A FR 7626212A FR 7626212 A FR7626212 A FR 7626212A FR 2322456 B1 FR2322456 B1 FR 2322456B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7626212A
Other languages
French (fr)
Other versions
FR2322456A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2322456A1 publication Critical patent/FR2322456A1/fr
Application granted granted Critical
Publication of FR2322456B1 publication Critical patent/FR2322456B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
FR7626212A 1975-09-01 1976-08-31 Procede de superfinition de surfaces de semi-conducteurs, en particulier de surfaces d'arseniure de gallium d'orientation (111) Granted FR2322456A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752538855 DE2538855A1 (de) 1975-09-01 1975-09-01 Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid

Publications (2)

Publication Number Publication Date
FR2322456A1 FR2322456A1 (fr) 1977-03-25
FR2322456B1 true FR2322456B1 (OSRAM) 1978-06-30

Family

ID=5955334

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626212A Granted FR2322456A1 (fr) 1975-09-01 1976-08-31 Procede de superfinition de surfaces de semi-conducteurs, en particulier de surfaces d'arseniure de gallium d'orientation (111)

Country Status (6)

Country Link
US (1) US4064660A (OSRAM)
JP (1) JPS5230159A (OSRAM)
DE (1) DE2538855A1 (OSRAM)
FR (1) FR2322456A1 (OSRAM)
GB (1) GB1493905A (OSRAM)
NL (1) NL7608325A (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
JPS55113700A (en) * 1979-02-19 1980-09-02 Fujimi Kenmazai Kogyo Kk Polishing method for gadolinium gallium garnet single crystal
US4663890A (en) * 1982-05-18 1987-05-12 Gmn Georg Muller Nurnberg Gmbh Method for machining workpieces of brittle hard material into wafers
US4570071A (en) * 1983-12-27 1986-02-11 General Electric Company Ionization detector
US4613314A (en) * 1983-12-27 1986-09-23 General Electric Company Ionization detector
US4613313A (en) * 1983-12-27 1986-09-23 General Electric Company Ionization detector
JPS60139336A (ja) * 1983-12-27 1985-07-24 Otsuka Chem Co Ltd 飲料液の濾過方法
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
DE4311484A1 (de) * 1992-04-09 1993-10-14 Micron Technology Inc Verfahren zur Bildung einer leitfähigen Struktur auf der Oberfläche eines Substrats
DE69306049T2 (de) * 1992-06-19 1997-03-13 Rikagaku Kenkyusho Vorrichtung zum Schleifen von Spiegeloberfläche
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
JP4435391B2 (ja) * 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
US6756308B2 (en) * 2001-02-13 2004-06-29 Ekc Technology, Inc. Chemical-mechanical planarization using ozone
US7601643B1 (en) * 2001-08-30 2009-10-13 Lsi Logic Corporation Arrangement and method for fabricating a semiconductor wafer
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997827A (en) * 1958-07-30 1961-08-29 Corning Glass Works Precision grinding
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US3527028A (en) * 1967-09-26 1970-09-08 Bell Telephone Labor Inc Preparation of semiconductor surfaces
DE1752163A1 (de) * 1968-04-11 1971-05-13 Wacker Chemie Gmbh Verfahren zum Polieren von Halbleiteroberflaechen
DE2247067C3 (de) * 1972-09-26 1979-08-09 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
DE2305188A1 (de) * 1973-02-02 1974-08-08 Wacker Chemitronic Verfahren zur herstellung von polierten halbleiteroberflaechen

Also Published As

Publication number Publication date
NL7608325A (nl) 1977-03-03
DE2538855A1 (de) 1977-03-10
JPS5230159A (en) 1977-03-07
US4064660A (en) 1977-12-27
GB1493905A (en) 1977-11-30
JPS5410824B2 (OSRAM) 1979-05-10
FR2322456A1 (fr) 1977-03-25

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Legal Events

Date Code Title Description
ST Notification of lapse