FR2313777B1 - - Google Patents

Info

Publication number
FR2313777B1
FR2313777B1 FR7605141A FR7605141A FR2313777B1 FR 2313777 B1 FR2313777 B1 FR 2313777B1 FR 7605141 A FR7605141 A FR 7605141A FR 7605141 A FR7605141 A FR 7605141A FR 2313777 B1 FR2313777 B1 FR 2313777B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7605141A
Other versions
FR2313777A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2313777A1 publication Critical patent/FR2313777A1/fr
Application granted granted Critical
Publication of FR2313777B1 publication Critical patent/FR2313777B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7605141A 1975-04-03 1976-02-17 Agencement semi-conducteur integre Granted FR2313777A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752514466 DE2514466B2 (de) 1975-04-03 1975-04-03 Integrierte halbleiterschaltung

Publications (2)

Publication Number Publication Date
FR2313777A1 FR2313777A1 (fr) 1976-12-31
FR2313777B1 true FR2313777B1 (fr) 1979-02-02

Family

ID=5942969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605141A Granted FR2313777A1 (fr) 1975-04-03 1976-02-17 Agencement semi-conducteur integre

Country Status (5)

Country Link
US (1) US4024417A (fr)
JP (1) JPS51123083A (fr)
DE (1) DE2514466B2 (fr)
FR (1) FR2313777A1 (fr)
IT (1) IT1056804B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148491A (en) * 1978-05-15 1979-11-20 Nec Corp Semiconductor integrated circuit
US4223238A (en) * 1978-08-17 1980-09-16 Motorola, Inc. Integrated circuit substrate charge pump
US4298334A (en) * 1979-11-26 1981-11-03 Honeywell Inc. Dynamically checked safety load switching circuit
JPS6340647Y2 (fr) * 1981-03-06 1988-10-24
JPS5852315U (ja) * 1981-10-06 1983-04-09 日立建機株式会社 ピン結合装置
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
US4562454A (en) * 1983-12-29 1985-12-31 Motorola, Inc. Electronic fuse for semiconductor devices
US4581547A (en) * 1984-02-22 1986-04-08 Motorola, Inc. Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate
US4577211A (en) * 1984-04-02 1986-03-18 Motorola, Inc. Integrated circuit and method for biasing an epitaxial layer
JPS61127165A (ja) * 1984-11-24 1986-06-14 Sharp Corp 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
US6839211B2 (en) * 2002-02-21 2005-01-04 Broadcom Corporation Methods and systems for reducing power-on failure of integrated circuits
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA886210A (en) * 1971-11-16 Northern Electric Company Limited High-low voltage detector
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
US3725675A (en) * 1971-03-29 1973-04-03 Honeywell Inf Systems Power sequencing control circuit
GB1405503A (en) * 1972-11-16 1975-09-10 Texas Instruments Inc Integrated circuits
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking

Also Published As

Publication number Publication date
FR2313777A1 (fr) 1976-12-31
DE2514466A1 (de) 1976-10-14
US4024417A (en) 1977-05-17
JPS5346702B2 (fr) 1978-12-15
IT1056804B (it) 1982-02-20
JPS51123083A (en) 1976-10-27
DE2514466B2 (de) 1977-04-21

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Legal Events

Date Code Title Description
ST Notification of lapse