FR2304400A1 - Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium - Google Patents

Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium

Info

Publication number
FR2304400A1
FR2304400A1 FR7508614A FR7508614A FR2304400A1 FR 2304400 A1 FR2304400 A1 FR 2304400A1 FR 7508614 A FR7508614 A FR 7508614A FR 7508614 A FR7508614 A FR 7508614A FR 2304400 A1 FR2304400 A1 FR 2304400A1
Authority
FR
France
Prior art keywords
obtd
reaction
monocrystals
gallium
gacl3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7508614A
Other languages
English (en)
French (fr)
Other versions
FR2304400B1 (enrdf_load_stackoverflow
Inventor
Guy Jacob
Jean Hallais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7508614A priority Critical patent/FR2304400A1/fr
Publication of FR2304400A1 publication Critical patent/FR2304400A1/fr
Application granted granted Critical
Publication of FR2304400B1 publication Critical patent/FR2304400B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7508614A 1975-03-19 1975-03-19 Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium Granted FR2304400A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7508614A FR2304400A1 (fr) 1975-03-19 1975-03-19 Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7508614A FR2304400A1 (fr) 1975-03-19 1975-03-19 Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium

Publications (2)

Publication Number Publication Date
FR2304400A1 true FR2304400A1 (fr) 1976-10-15
FR2304400B1 FR2304400B1 (enrdf_load_stackoverflow) 1977-11-18

Family

ID=9152783

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7508614A Granted FR2304400A1 (fr) 1975-03-19 1975-03-19 Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium

Country Status (1)

Country Link
FR (1) FR2304400A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110809A (en) * 1998-03-26 2000-08-29 Sze; Simon M. Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"JOURNAL OF THE ELECTROCHEMICAL SOCIETY: SOLID STATE SCIENCE AND TECHNOLOGY". 1972, VOLUME 119, NO.6, PAGES 761-765, ARTICLE "MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH II GAN" PAR V.S.BAN.) *
JOURNAL OF CRISTAL GROWTH". 1974, VOLUME 22, PAGES 1-5, ARTICLE "KINETICS OF THE EPITAXIAL GROWTH OF GAN USING GA, HCL AND NH3" PAR A.SHINTANI. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110809A (en) * 1998-03-26 2000-08-29 Sze; Simon M. Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer

Also Published As

Publication number Publication date
FR2304400B1 (enrdf_load_stackoverflow) 1977-11-18

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Legal Events

Date Code Title Description
ST Notification of lapse