FR2301894A1 - Memoire remanente et son procede de fabrication - Google Patents

Memoire remanente et son procede de fabrication

Info

Publication number
FR2301894A1
FR2301894A1 FR7604659A FR7604659A FR2301894A1 FR 2301894 A1 FR2301894 A1 FR 2301894A1 FR 7604659 A FR7604659 A FR 7604659A FR 7604659 A FR7604659 A FR 7604659A FR 2301894 A1 FR2301894 A1 FR 2301894A1
Authority
FR
France
Prior art keywords
manufacturing process
remanent memory
remanent
memory
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7604659A
Other languages
English (en)
French (fr)
Other versions
FR2301894B1 (da
Inventor
Susumu Koike
Ginjiro Kambara
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2301894A1 publication Critical patent/FR2301894A1/fr
Application granted granted Critical
Publication of FR2301894B1 publication Critical patent/FR2301894B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
FR7604659A 1975-02-20 1976-02-19 Memoire remanente et son procede de fabrication Granted FR2301894A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2163675A JPS5532032B2 (da) 1975-02-20 1975-02-20

Publications (2)

Publication Number Publication Date
FR2301894A1 true FR2301894A1 (fr) 1976-09-17
FR2301894B1 FR2301894B1 (da) 1981-10-09

Family

ID=12060546

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7604659A Granted FR2301894A1 (fr) 1975-02-20 1976-02-19 Memoire remanente et son procede de fabrication

Country Status (5)

Country Link
JP (1) JPS5532032B2 (da)
CA (1) CA1078517A (da)
DE (1) DE2606743C3 (da)
FR (1) FR2301894A1 (da)
GB (1) GB1519068A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3064877D1 (en) * 1979-04-12 1983-10-27 Light Regulation Handel Apparatus for transmitting information on an alternating current line
KR102545107B1 (ko) * 2018-12-03 2023-06-20 현대자동차주식회사 친환경 자동차 및 그를 위한 강판 주행 제어 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
GB1289740A (da) * 1969-12-24 1972-09-20
JPS4960876A (da) * 1972-10-16 1974-06-13
JPS5024084A (da) * 1973-07-05 1975-03-14

Also Published As

Publication number Publication date
DE2606743B2 (de) 1981-07-02
JPS5532032B2 (da) 1980-08-22
CA1078517A (en) 1980-05-27
GB1519068A (en) 1978-07-26
JPS5196289A (da) 1976-08-24
DE2606743A1 (de) 1976-09-02
FR2301894B1 (da) 1981-10-09
DE2606743C3 (de) 1983-12-29

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Legal Events

Date Code Title Description
ST Notification of lapse