JPS5196289A - - Google Patents

Info

Publication number
JPS5196289A
JPS5196289A JP50021636A JP2163675A JPS5196289A JP S5196289 A JPS5196289 A JP S5196289A JP 50021636 A JP50021636 A JP 50021636A JP 2163675 A JP2163675 A JP 2163675A JP S5196289 A JPS5196289 A JP S5196289A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50021636A
Other languages
Japanese (ja)
Other versions
JPS5532032B2 (da
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2163675A priority Critical patent/JPS5532032B2/ja
Priority to CA245,948A priority patent/CA1078517A/en
Priority to GB621876A priority patent/GB1519068A/en
Priority to FR7604659A priority patent/FR2301894A1/fr
Priority to DE19762606743 priority patent/DE2606743C3/de
Publication of JPS5196289A publication Critical patent/JPS5196289A/ja
Priority to US05/960,450 priority patent/US4193080A/en
Publication of JPS5532032B2 publication Critical patent/JPS5532032B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
JP2163675A 1975-02-20 1975-02-20 Expired JPS5532032B2 (da)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2163675A JPS5532032B2 (da) 1975-02-20 1975-02-20
CA245,948A CA1078517A (en) 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same
GB621876A GB1519068A (en) 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same
FR7604659A FR2301894A1 (fr) 1975-02-20 1976-02-19 Memoire remanente et son procede de fabrication
DE19762606743 DE2606743C3 (de) 1975-02-20 1976-02-19 Als leistungsunabhängige Speichervorrichtung verwendbarer Feldeffekttransistor und Verfahren zu dessen Herstellung
US05/960,450 US4193080A (en) 1975-02-20 1978-11-09 Non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2163675A JPS5532032B2 (da) 1975-02-20 1975-02-20

Publications (2)

Publication Number Publication Date
JPS5196289A true JPS5196289A (da) 1976-08-24
JPS5532032B2 JPS5532032B2 (da) 1980-08-22

Family

ID=12060546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2163675A Expired JPS5532032B2 (da) 1975-02-20 1975-02-20

Country Status (5)

Country Link
JP (1) JPS5532032B2 (da)
CA (1) CA1078517A (da)
DE (1) DE2606743C3 (da)
FR (1) FR2301894A1 (da)
GB (1) GB1519068A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3064877D1 (en) * 1979-04-12 1983-10-27 Light Regulation Handel Apparatus for transmitting information on an alternating current line
KR102545107B1 (ko) * 2018-12-03 2023-06-20 현대자동차주식회사 친환경 자동차 및 그를 위한 강판 주행 제어 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960876A (da) * 1972-10-16 1974-06-13

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
GB1289740A (da) * 1969-12-24 1972-09-20
JPS5024084A (da) * 1973-07-05 1975-03-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960876A (da) * 1972-10-16 1974-06-13

Also Published As

Publication number Publication date
DE2606743B2 (de) 1981-07-02
JPS5532032B2 (da) 1980-08-22
CA1078517A (en) 1980-05-27
FR2301894A1 (fr) 1976-09-17
GB1519068A (en) 1978-07-26
DE2606743A1 (de) 1976-09-02
FR2301894B1 (da) 1981-10-09
DE2606743C3 (de) 1983-12-29

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