FR2299665B1 - - Google Patents

Info

Publication number
FR2299665B1
FR2299665B1 FR7538564A FR7538564A FR2299665B1 FR 2299665 B1 FR2299665 B1 FR 2299665B1 FR 7538564 A FR7538564 A FR 7538564A FR 7538564 A FR7538564 A FR 7538564A FR 2299665 B1 FR2299665 B1 FR 2299665B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7538564A
Other versions
FR2299665A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2299665A1 publication Critical patent/FR2299665A1/fr
Application granted granted Critical
Publication of FR2299665B1 publication Critical patent/FR2299665B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/117—Free radical
FR7538564A 1975-01-29 1975-12-09 Procede de formation d'image utilisant une laque a base de polymeres de methacrylate Granted FR2299665A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/545,063 US4011351A (en) 1975-01-29 1975-01-29 Preparation of resist image with methacrylate polymers

Publications (2)

Publication Number Publication Date
FR2299665A1 FR2299665A1 (fr) 1976-08-27
FR2299665B1 true FR2299665B1 (fr) 1981-05-29

Family

ID=24174749

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538564A Granted FR2299665A1 (fr) 1975-01-29 1975-12-09 Procede de formation d'image utilisant une laque a base de polymeres de methacrylate

Country Status (6)

Country Link
US (1) US4011351A (fr)
JP (1) JPS5187971A (fr)
DE (1) DE2602825A1 (fr)
FR (1) FR2299665A1 (fr)
GB (1) GB1515330A (fr)
IT (1) IT1051884B (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS52149116A (en) * 1976-06-07 1977-12-12 Tokyo Ouka Kougiyou Kk Method of forming xxray image
JPS5934296B2 (ja) * 1976-06-16 1984-08-21 松下電器産業株式会社 電子ビ−ムレジストおよびその使用方法
JPS5376825A (en) * 1976-12-20 1978-07-07 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive positive regist material
JPS5484978A (en) * 1977-12-20 1979-07-06 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
AU4719279A (en) * 1978-05-22 1979-11-29 Western Electric Co. Inc. Lithographic resist and device processing utilizing same
US4289845A (en) * 1978-05-22 1981-09-15 Bell Telephone Laboratories, Inc. Fabrication based on radiation sensitive resists and related products
JPS5828571B2 (ja) * 1978-07-20 1983-06-16 沖電気工業株式会社 微細加工用レジスト形成方法
JPS5517112A (en) * 1978-07-21 1980-02-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Positive type radiation sensitive composition
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
DE2839751A1 (de) * 1978-09-13 1980-04-03 Bayer Ag Positive elektronenstrahl-resiste
DE3060510D1 (en) * 1979-03-09 1982-07-29 Thomson Csf Photomasking substances, process for preparing them and mask obtained
FR2461967A2 (fr) * 1979-07-17 1981-02-06 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
FR2451050A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
DE2933570C3 (de) * 1979-08-18 1982-02-25 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe Verfahren zum Herstellen von Trenndüsenelementen
US4302529A (en) * 1980-01-08 1981-11-24 Honeywell Inc. Process for developing a positive electron resist
DE3006527A1 (de) * 1980-02-21 1981-08-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage
DE3036615A1 (de) * 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von resiststrukturen
DE3280230D1 (de) * 1981-05-07 1990-09-20 Honeywell Inc Verfahren zur herstellung von empfindlichen positiven elektronenstrahlresists.
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
EP0076524A1 (fr) * 1981-10-06 1983-04-13 Kabushiki Kaisha Toshiba Réserve de type positif sensible aux rayons
US4476217A (en) * 1982-05-10 1984-10-09 Honeywell Inc. Sensitive positive electron beam resists
US4835086A (en) * 1988-02-12 1989-05-30 Hoechst Celanese Corporation Polysulfone barrier layer for bi-level photoresists
JP3740207B2 (ja) * 1996-02-13 2006-02-01 大日本スクリーン製造株式会社 基板表面に形成されたシリカ系被膜の膜溶解方法
US5955242A (en) * 1996-09-23 1999-09-21 International Business Machines Corporation High sensitivity, photo-active polymer and developers for high resolution resist applications
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
TWI220774B (en) * 2003-11-03 2004-09-01 Univ Nat Sun Yat Sen Method for patterning low dielectric constant film and method for manufacturing dual damascene structure
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
GB2544198B (en) 2014-05-21 2021-01-13 Integenx Inc Fluidic cartridge with valve mechanism
JP6365015B2 (ja) * 2014-06-30 2018-08-01 大日本印刷株式会社 ポジ型レジスト組成物及びその製造方法、並びに、当該ポジ型レジスト組成物を用いたレジストパターンの製造方法
US11262654B2 (en) * 2019-12-27 2022-03-01 Intel Corporation Chain scission resist compositions for EUV lithography applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2905556A (en) * 1957-08-19 1959-09-22 Ferro Corp Photosensitive composition of matter and method of making same
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3679497A (en) * 1969-10-24 1972-07-25 Westinghouse Electric Corp Electron beam fabrication system and process for use thereof
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
JPS5441207B2 (fr) * 1972-08-12 1979-12-07
JPS5234192B2 (fr) * 1972-09-12 1977-09-01
US3898350A (en) * 1974-06-27 1975-08-05 Ibm Terpolymers for electron beam positive resists

Also Published As

Publication number Publication date
DE2602825A1 (de) 1976-08-05
JPS5311827B2 (fr) 1978-04-25
US4011351A (en) 1977-03-08
GB1515330A (en) 1978-06-21
IT1051884B (it) 1981-05-20
FR2299665A1 (fr) 1976-08-27
JPS5187971A (en) 1976-07-31

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Legal Events

Date Code Title Description
ST Notification of lapse