FR2299665A1 - Procede de formation d'image utilisant une laque a base de polymeres de methacrylate - Google Patents
Procede de formation d'image utilisant une laque a base de polymeres de methacrylateInfo
- Publication number
- FR2299665A1 FR2299665A1 FR7538564A FR7538564A FR2299665A1 FR 2299665 A1 FR2299665 A1 FR 2299665A1 FR 7538564 A FR7538564 A FR 7538564A FR 7538564 A FR7538564 A FR 7538564A FR 2299665 A1 FR2299665 A1 FR 2299665A1
- Authority
- FR
- France
- Prior art keywords
- image forming
- forming process
- methacrylate polymers
- lacquer based
- lacquer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/117—Free radical
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/545,063 US4011351A (en) | 1975-01-29 | 1975-01-29 | Preparation of resist image with methacrylate polymers |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2299665A1 true FR2299665A1 (fr) | 1976-08-27 |
FR2299665B1 FR2299665B1 (fr) | 1981-05-29 |
Family
ID=24174749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7538564A Granted FR2299665A1 (fr) | 1975-01-29 | 1975-12-09 | Procede de formation d'image utilisant une laque a base de polymeres de methacrylate |
Country Status (6)
Country | Link |
---|---|
US (1) | US4011351A (fr) |
JP (1) | JPS5187971A (fr) |
DE (1) | DE2602825A1 (fr) |
FR (1) | FR2299665A1 (fr) |
GB (1) | GB1515330A (fr) |
IT (1) | IT1051884B (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0007976A1 (fr) * | 1978-05-22 | 1980-02-20 | Western Electric Company, Incorporated | Photorésist et article, procédé l'utilisant |
EP0008787A1 (fr) * | 1978-09-13 | 1980-03-19 | Bayer Ag | Liant pour laque positive sensible au faisceau électronique |
EP0016679A1 (fr) * | 1979-03-09 | 1980-10-01 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
FR2451050A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
FR2461967A2 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
EP0048899A2 (fr) * | 1980-09-29 | 1982-04-07 | Siemens Aktiengesellschaft | Procédé de formation de réserves |
EP0076524A1 (fr) * | 1981-10-06 | 1983-04-13 | Kabushiki Kaisha Toshiba | Réserve de type positif sensible aux rayons |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
JPS52149116A (en) * | 1976-06-07 | 1977-12-12 | Tokyo Ouka Kougiyou Kk | Method of forming xxray image |
JPS5934296B2 (ja) * | 1976-06-16 | 1984-08-21 | 松下電器産業株式会社 | 電子ビ−ムレジストおよびその使用方法 |
JPS5376825A (en) * | 1976-12-20 | 1978-07-07 | Cho Lsi Gijutsu Kenkyu Kumiai | Radiation sensitive positive regist material |
JPS5484978A (en) * | 1977-12-20 | 1979-07-06 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of forming pattern |
US4289845A (en) * | 1978-05-22 | 1981-09-15 | Bell Telephone Laboratories, Inc. | Fabrication based on radiation sensitive resists and related products |
JPS5828571B2 (ja) * | 1978-07-20 | 1983-06-16 | 沖電気工業株式会社 | 微細加工用レジスト形成方法 |
JPS5517112A (en) * | 1978-07-21 | 1980-02-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Positive type radiation sensitive composition |
JPS5518638A (en) * | 1978-07-27 | 1980-02-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Ionized radiation sensitive positive type resist |
DE2933570C3 (de) * | 1979-08-18 | 1982-02-25 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Verfahren zum Herstellen von Trenndüsenelementen |
US4302529A (en) * | 1980-01-08 | 1981-11-24 | Honeywell Inc. | Process for developing a positive electron resist |
DE3006527A1 (de) * | 1980-02-21 | 1981-08-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage |
US4415653A (en) * | 1981-05-07 | 1983-11-15 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
EP0064864B1 (fr) * | 1981-05-07 | 1989-12-13 | Honeywell Inc. | Procédé pour la fabrication de résistes positives sensibles aux rayons électroniques |
US4476217A (en) * | 1982-05-10 | 1984-10-09 | Honeywell Inc. | Sensitive positive electron beam resists |
US4835086A (en) * | 1988-02-12 | 1989-05-30 | Hoechst Celanese Corporation | Polysulfone barrier layer for bi-level photoresists |
JP3740207B2 (ja) * | 1996-02-13 | 2006-02-01 | 大日本スクリーン製造株式会社 | 基板表面に形成されたシリカ系被膜の膜溶解方法 |
US5955242A (en) * | 1996-09-23 | 1999-09-21 | International Business Machines Corporation | High sensitivity, photo-active polymer and developers for high resolution resist applications |
US6436605B1 (en) | 1999-07-12 | 2002-08-20 | International Business Machines Corporation | Plasma resistant composition and use thereof |
TWI220774B (en) * | 2003-11-03 | 2004-09-01 | Univ Nat Sun Yat Sen | Method for patterning low dielectric constant film and method for manufacturing dual damascene structure |
US7659050B2 (en) * | 2005-06-07 | 2010-02-09 | International Business Machines Corporation | High resolution silicon-containing resist |
WO2015179098A1 (fr) | 2014-05-21 | 2015-11-26 | Integenx Inc. | Cartouche fluidique comprenant un mécanisme de soupape |
JP6365015B2 (ja) * | 2014-06-30 | 2018-08-01 | 大日本印刷株式会社 | ポジ型レジスト組成物及びその製造方法、並びに、当該ポジ型レジスト組成物を用いたレジストパターンの製造方法 |
US11262654B2 (en) * | 2019-12-27 | 2022-03-01 | Intel Corporation | Chain scission resist compositions for EUV lithography applications |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2905556A (en) * | 1957-08-19 | 1959-09-22 | Ferro Corp | Photosensitive composition of matter and method of making same |
US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
US3679497A (en) * | 1969-10-24 | 1972-07-25 | Westinghouse Electric Corp | Electron beam fabrication system and process for use thereof |
US3770433A (en) * | 1972-03-22 | 1973-11-06 | Bell Telephone Labor Inc | High sensitivity negative electron resist |
US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
JPS5441207B2 (fr) * | 1972-08-12 | 1979-12-07 | ||
JPS5234192B2 (fr) * | 1972-09-12 | 1977-09-01 | ||
US3898350A (en) * | 1974-06-27 | 1975-08-05 | Ibm | Terpolymers for electron beam positive resists |
-
1975
- 1975-01-29 US US05/545,063 patent/US4011351A/en not_active Expired - Lifetime
- 1975-12-05 GB GB49960/75A patent/GB1515330A/en not_active Expired
- 1975-12-09 FR FR7538564A patent/FR2299665A1/fr active Granted
- 1975-12-16 JP JP50149223A patent/JPS5187971A/ja active Granted
- 1975-12-23 IT IT30677/75A patent/IT1051884B/it active
-
1976
- 1976-01-27 DE DE19762602825 patent/DE2602825A1/de not_active Withdrawn
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0007976A1 (fr) * | 1978-05-22 | 1980-02-20 | Western Electric Company, Incorporated | Photorésist et article, procédé l'utilisant |
EP0008787A1 (fr) * | 1978-09-13 | 1980-03-19 | Bayer Ag | Liant pour laque positive sensible au faisceau électronique |
EP0016679A1 (fr) * | 1979-03-09 | 1980-10-01 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
FR2451050A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
FR2461967A2 (fr) * | 1979-07-17 | 1981-02-06 | Thomson Csf | Composition de photomasquage, son procede de preparation, et masque obtenu |
EP0048899A2 (fr) * | 1980-09-29 | 1982-04-07 | Siemens Aktiengesellschaft | Procédé de formation de réserves |
EP0048899A3 (en) * | 1980-09-29 | 1983-01-19 | Siemens Aktiengesellschaft | Method of producing resist patterns |
EP0076524A1 (fr) * | 1981-10-06 | 1983-04-13 | Kabushiki Kaisha Toshiba | Réserve de type positif sensible aux rayons |
Also Published As
Publication number | Publication date |
---|---|
JPS5187971A (en) | 1976-07-31 |
GB1515330A (en) | 1978-06-21 |
JPS5311827B2 (fr) | 1978-04-25 |
FR2299665B1 (fr) | 1981-05-29 |
DE2602825A1 (de) | 1976-08-05 |
US4011351A (en) | 1977-03-08 |
IT1051884B (it) | 1981-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |