DE3280230D1 - Verfahren zur herstellung von empfindlichen positiven elektronenstrahlresists. - Google Patents

Verfahren zur herstellung von empfindlichen positiven elektronenstrahlresists.

Info

Publication number
DE3280230D1
DE3280230D1 DE8282302301T DE3280230T DE3280230D1 DE 3280230 D1 DE3280230 D1 DE 3280230D1 DE 8282302301 T DE8282302301 T DE 8282302301T DE 3280230 T DE3280230 T DE 3280230T DE 3280230 D1 DE3280230 D1 DE 3280230D1
Authority
DE
Germany
Prior art keywords
electron beam
positive electron
sensitive positive
beam resists
producing sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8282302301T
Other languages
English (en)
Inventor
Juey H Lai
Richard Douglas
Lloyd Shepherd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE3280230D1 publication Critical patent/DE3280230D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
DE8282302301T 1981-05-07 1982-05-06 Verfahren zur herstellung von empfindlichen positiven elektronenstrahlresists. Expired - Fee Related DE3280230D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26142781A 1981-05-07 1981-05-07

Publications (1)

Publication Number Publication Date
DE3280230D1 true DE3280230D1 (de) 1990-09-20

Family

ID=22993259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282302301T Expired - Fee Related DE3280230D1 (de) 1981-05-07 1982-05-06 Verfahren zur herstellung von empfindlichen positiven elektronenstrahlresists.

Country Status (3)

Country Link
EP (1) EP0064864B1 (de)
JP (1) JPS5858734A (de)
DE (1) DE3280230D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389482A (en) * 1981-12-14 1983-06-21 International Business Machines Corporation Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light
JPS58110038A (ja) * 1981-12-23 1983-06-30 Nec Corp パタ−ン形成方法
US4564585A (en) * 1983-11-28 1986-01-14 Magnetic Peripherals, Inc. Process for fabricating negative pressure sliders
GB2150317A (en) * 1983-11-28 1985-06-26 Magnetic Peripherals Inc Process for producing negative pressure sliders using a photoresist
DE3446074A1 (de) * 1984-12-18 1986-06-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur herstellung von roentgen-resists
JPH0442229A (ja) * 1990-06-08 1992-02-12 Fujitsu Ltd レジスト材料およびパターンの形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914462A (en) * 1971-06-04 1975-10-21 Hitachi Ltd Method for forming a resist mask using a positive electron resist
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US3984582A (en) * 1975-06-30 1976-10-05 Ibm Method for preparing positive resist image
JPS5934296B2 (ja) * 1976-06-16 1984-08-21 松下電器産業株式会社 電子ビ−ムレジストおよびその使用方法
US4087569A (en) * 1976-12-20 1978-05-02 International Business Machines Corporation Prebaking treatment for resist mask composition and mask making process using same
JPS5381114A (en) * 1976-12-25 1978-07-18 Toshiba Corp Radiation sensitive material

Also Published As

Publication number Publication date
EP0064864B1 (de) 1989-12-13
EP0064864A1 (de) 1982-11-17
JPS5858734A (ja) 1983-04-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee