FR2298880B1 - - Google Patents

Info

Publication number
FR2298880B1
FR2298880B1 FR7501942A FR7501942A FR2298880B1 FR 2298880 B1 FR2298880 B1 FR 2298880B1 FR 7501942 A FR7501942 A FR 7501942A FR 7501942 A FR7501942 A FR 7501942A FR 2298880 B1 FR2298880 B1 FR 2298880B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7501942A
Other languages
French (fr)
Other versions
FR2298880A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7501942A priority Critical patent/FR2298880A1/fr
Priority to GB1157/76A priority patent/GB1490481A/en
Priority to US05/649,994 priority patent/US4035655A/en
Publication of FR2298880A1 publication Critical patent/FR2298880A1/fr
Application granted granted Critical
Publication of FR2298880B1 publication Critical patent/FR2298880B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
FR7501942A 1975-01-22 1975-01-22 Procede et dispositif d'implantation ionique Granted FR2298880A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7501942A FR2298880A1 (fr) 1975-01-22 1975-01-22 Procede et dispositif d'implantation ionique
GB1157/76A GB1490481A (en) 1975-01-22 1976-01-13 Particle implantation
US05/649,994 US4035655A (en) 1975-01-22 1976-01-19 Method and a device for implantation of particles into a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7501942A FR2298880A1 (fr) 1975-01-22 1975-01-22 Procede et dispositif d'implantation ionique

Publications (2)

Publication Number Publication Date
FR2298880A1 FR2298880A1 (fr) 1976-08-20
FR2298880B1 true FR2298880B1 (OSRAM) 1978-02-03

Family

ID=9150153

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7501942A Granted FR2298880A1 (fr) 1975-01-22 1975-01-22 Procede et dispositif d'implantation ionique

Country Status (3)

Country Link
US (1) US4035655A (OSRAM)
FR (1) FR2298880A1 (OSRAM)
GB (1) GB1490481A (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985742A (en) 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643893C3 (de) * 1976-09-29 1981-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer mit einer Struktur versehenen Schicht auf einem Substrat
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs
US4405864A (en) * 1981-09-08 1983-09-20 Rca Corporation Ion implanter end processing station
FR2529383A1 (fr) * 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
JP2582552B2 (ja) * 1986-05-29 1997-02-19 三菱電機株式会社 イオン注入装置
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle
EP0362418A1 (en) * 1988-10-03 1990-04-11 International Business Machines Corporation Improved method and system for the angled exposition of a surface portion to an emission impinging obliquely thereon, and semiconductor wafers having facets exposed according to said method
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US5898179A (en) 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
AU6905000A (en) 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
GB2389958B (en) * 2002-06-21 2005-09-07 Applied Materials Inc Multi directional mechanical scanning in an ion implanter
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
JP6588323B2 (ja) * 2015-12-10 2019-10-09 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US3778628A (en) * 1971-08-02 1973-12-11 Ardac Inc Secondary detection circuit with sharp cutoff for security validating

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6458672B1 (en) 1997-05-12 2002-10-01 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6013563A (en) 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US6048411A (en) 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6146979A (en) 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6155909A (en) 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6187110B1 (en) 1997-05-12 2001-02-13 Silicon Genesis Corporation Device for patterned films
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US7759217B2 (en) 1997-05-12 2010-07-20 Silicon Genesis Corporation Controlled process and resulting device
US6284631B1 (en) 1997-05-12 2001-09-04 Silicon Genesis Corporation Method and device for controlled cleaving process
US6290804B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Controlled cleavage process using patterning
US7410887B2 (en) 1997-05-12 2008-08-12 Silicon Genesis Corporation Controlled process and resulting device
US6010579A (en) 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US7371660B2 (en) 1997-05-12 2008-05-13 Silicon Genesis Corporation Controlled cleaving process
US6558802B1 (en) 1997-05-12 2003-05-06 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6486041B2 (en) 1997-05-12 2002-11-26 Silicon Genesis Corporation Method and device for controlled cleaving process
US7348258B2 (en) 1997-05-12 2008-03-25 Silicon Genesis Corporation Method and device for controlled cleaving process
US6511899B1 (en) 1997-05-12 2003-01-28 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6391740B1 (en) 1997-05-12 2002-05-21 Silicon Genesis Corporation Generic layer transfer methodology by controlled cleavage process
US7160790B2 (en) 1997-05-12 2007-01-09 Silicon Genesis Corporation Controlled cleaving process
US5985742A (en) 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6632724B2 (en) 1997-05-12 2003-10-14 Silicon Genesis Corporation Controlled cleaving process
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6513564B2 (en) 1999-08-10 2003-02-04 Silicon Genesis Corporation Nozzle for cleaving substrates
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling

Also Published As

Publication number Publication date
FR2298880A1 (fr) 1976-08-20
GB1490481A (en) 1977-11-02
US4035655A (en) 1977-07-12

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Legal Events

Date Code Title Description
ST Notification of lapse