FR2295643A1 - Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers - Google Patents

Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers

Info

Publication number
FR2295643A1
FR2295643A1 FR7441710A FR7441710A FR2295643A1 FR 2295643 A1 FR2295643 A1 FR 2295643A1 FR 7441710 A FR7441710 A FR 7441710A FR 7441710 A FR7441710 A FR 7441710A FR 2295643 A1 FR2295643 A1 FR 2295643A1
Authority
FR
France
Prior art keywords
control circuit
semiconductor switching
current generators
differential amplifiers
switching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7441710A
Other languages
French (fr)
Other versions
FR2295643B1 (en
Inventor
Georges Roger Bourreau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Priority to FR7441710A priority Critical patent/FR2295643A1/en
Publication of FR2295643A1 publication Critical patent/FR2295643A1/en
Application granted granted Critical
Publication of FR2295643B1 publication Critical patent/FR2295643B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/661—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to both load terminals
    • H03K17/662—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to both load terminals each output circuit comprising more than one controlled bipolar transistor
    • H03K17/663—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to both load terminals each output circuit comprising more than one controlled bipolar transistor using complementary bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Landscapes

  • Electronic Switches (AREA)

Abstract

The control circuit for semiconductor switching means (3) using at least one diode (31) in parallel with a resistor (32) employs two current generators (G1, G2) providing currents of equal value but of opposite sense, and two associated differential amplifiers. The latter are each provided by two similar transistors (11, 12, 21, 22) the emitter-collector circuits of which form two branches, respectively connected to the two terminals of the switching means (3). The bases of the two transistors which are connected to the same terminal of the switching means (3), simultaneously receive a voltage pulse from a control input, such that the ratio of the currents provided by each differential amplifier is altered.
FR7441710A 1974-12-18 1974-12-18 Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers Granted FR2295643A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7441710A FR2295643A1 (en) 1974-12-18 1974-12-18 Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7441710A FR2295643A1 (en) 1974-12-18 1974-12-18 Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers

Publications (2)

Publication Number Publication Date
FR2295643A1 true FR2295643A1 (en) 1976-07-16
FR2295643B1 FR2295643B1 (en) 1981-06-19

Family

ID=9146324

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441710A Granted FR2295643A1 (en) 1974-12-18 1974-12-18 Control circuit for semiconductor switching device - makes use of two opposed current generators and includes two differential amplifiers

Country Status (1)

Country Link
FR (1) FR2295643A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508128A2 (en) * 1991-03-28 1992-10-14 Texas Instruments Incorporated Four port monolithic GaAs PIN diode switch
EP1011197A1 (en) * 1998-12-08 2000-06-21 Nec Corporation Method for generating differential tri-states and differential tri-state circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508128A2 (en) * 1991-03-28 1992-10-14 Texas Instruments Incorporated Four port monolithic GaAs PIN diode switch
EP0508128A3 (en) * 1991-03-28 1993-02-03 Texas Instruments Incorporated Four port monolithic gaas pin diode switch
EP1011197A1 (en) * 1998-12-08 2000-06-21 Nec Corporation Method for generating differential tri-states and differential tri-state circuit
US6316964B1 (en) 1998-12-08 2001-11-13 Nec Corporation Method for generating differential tri-states and differential tri-state circuit

Also Published As

Publication number Publication date
FR2295643B1 (en) 1981-06-19

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Legal Events

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CA Change of address
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ST Notification of lapse