|
JPS51149784A
(en)
*
|
1975-06-17 |
1976-12-22 |
Matsushita Electric Ind Co Ltd |
Solid state light emission device
|
|
DE2624436C2
(de)
*
|
1976-06-01 |
1982-11-04 |
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt |
Lichtwellenleiter mit integriertem Detektorelement
|
|
FR2387519A1
(fr)
*
|
1977-04-15 |
1978-11-10 |
Thomson Csf |
Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode
|
|
US4199385A
(en)
*
|
1977-09-21 |
1980-04-22 |
International Business Machines Corporation |
Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion
|
|
US4167016A
(en)
*
|
1977-09-21 |
1979-09-04 |
International Business Machines Corporation |
Optically isolated monolithic light emitting diode array
|
|
FR2423869A1
(fr)
*
|
1978-04-21 |
1979-11-16 |
Radiotechnique Compelec |
Dispositif semiconducteur electroluminescent a recyclage de photons
|
|
US4216485A
(en)
*
|
1978-09-15 |
1980-08-05 |
Westinghouse Electric Corp. |
Optical transistor structure
|
|
US4220960A
(en)
*
|
1978-10-25 |
1980-09-02 |
International Telephone And Telegraph Corporation |
Light emitting diode structure
|
|
US4309670A
(en)
*
|
1979-09-13 |
1982-01-05 |
Xerox Corporation |
Transverse light emitting electroluminescent devices
|
|
US4249967A
(en)
*
|
1979-12-26 |
1981-02-10 |
International Telephone And Telegraph Corporation |
Method of manufacturing a light-emitting diode by liquid phase epitaxy
|
|
EP0042484A3
(en)
*
|
1980-06-25 |
1982-07-14 |
Northern Telecom Limited |
High radiance led's
|
|
US4706101A
(en)
*
|
1984-10-27 |
1987-11-10 |
Kabushiki Kaisha Toshiba |
Light emitting diode formed of a compound semiconductor material
|
|
JPS62128587A
(ja)
*
|
1985-11-29 |
1987-06-10 |
Matsushita Electric Ind Co Ltd |
半導体レ−ザ
|
|
DE3728568A1
(de)
*
|
1987-08-27 |
1989-03-16 |
Telefunken Electronic Gmbh |
Halbleiterlaseranordnung
|
|
JPH02174272A
(ja)
*
|
1988-12-17 |
1990-07-05 |
Samsung Electron Co Ltd |
発光ダイオードアレイの製造方法
|
|
US5038356A
(en)
*
|
1989-12-04 |
1991-08-06 |
Trw Inc. |
Vertical-cavity surface-emitting diode laser
|
|
US8587020B2
(en)
|
1997-11-19 |
2013-11-19 |
Epistar Corporation |
LED lamps
|
|
US6633120B2
(en)
|
1998-11-19 |
2003-10-14 |
Unisplay S.A. |
LED lamps
|
|
DE19963550B4
(de)
*
|
1999-12-22 |
2004-05-06 |
Epigap Optoelektronik Gmbh |
Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
|
|
US6429460B1
(en)
|
2000-09-28 |
2002-08-06 |
United Epitaxy Company, Ltd. |
Highly luminous light emitting device
|
|
US6657237B2
(en)
*
|
2000-12-18 |
2003-12-02 |
Samsung Electro-Mechanics Co., Ltd. |
GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
|
|
JP3910817B2
(ja)
*
|
2000-12-19 |
2007-04-25 |
ユーディナデバイス株式会社 |
半導体受光装置
|
|
US7233028B2
(en)
*
|
2001-02-23 |
2007-06-19 |
Nitronex Corporation |
Gallium nitride material devices and methods of forming the same
|
|
EP1573871B1
(en)
*
|
2002-12-20 |
2018-03-07 |
Cree, Inc. |
Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
|
|
EP2495772A1
(en)
*
|
2011-03-02 |
2012-09-05 |
Azzurro Semiconductors AG |
Semiconductor light emitter device
|
|
FR3069106B1
(fr)
*
|
2017-07-17 |
2019-10-18 |
Commissariat A L'energie Atomique Et Aux Energies Alternatives |
Diode electroluminescente comportant un empilement a partie amincie et procede d'elaboration de la diode electroluminescente
|