FR2286503A1 - Procede de fabrication d'un transistor de puissance - Google Patents

Procede de fabrication d'un transistor de puissance

Info

Publication number
FR2286503A1
FR2286503A1 FR7526330A FR7526330A FR2286503A1 FR 2286503 A1 FR2286503 A1 FR 2286503A1 FR 7526330 A FR7526330 A FR 7526330A FR 7526330 A FR7526330 A FR 7526330A FR 2286503 A1 FR2286503 A1 FR 2286503A1
Authority
FR
France
Prior art keywords
manufacturing process
power transistor
transistor
power
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7526330A
Other languages
English (en)
Other versions
FR2286503B1 (fr
Inventor
Manfred Dahmen
Anneliese Ritzhaupt
Manfred Zurheide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2286503A1 publication Critical patent/FR2286503A1/fr
Application granted granted Critical
Publication of FR2286503B1 publication Critical patent/FR2286503B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7526330A 1974-09-24 1975-08-19 Procede de fabrication d'un transistor de puissance Granted FR2286503A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742445480 DE2445480A1 (de) 1974-09-24 1974-09-24 Verfahren zur herstellung eines leistungstransistors

Publications (2)

Publication Number Publication Date
FR2286503A1 true FR2286503A1 (fr) 1976-04-23
FR2286503B1 FR2286503B1 (fr) 1978-04-07

Family

ID=5926552

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7526330A Granted FR2286503A1 (fr) 1974-09-24 1975-08-19 Procede de fabrication d'un transistor de puissance

Country Status (5)

Country Link
US (1) US3970487A (fr)
JP (1) JPS5151289A (fr)
DE (1) DE2445480A1 (fr)
FR (1) FR2286503A1 (fr)
GB (1) GB1501894A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4954455A (en) * 1984-12-18 1990-09-04 Advanced Micro Devices Semiconductor memory device having protection against alpha strike induced errors
IT1298516B1 (it) * 1998-01-30 2000-01-12 Sgs Thomson Microelectronics Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1425087A (fr) * 1964-02-24 1966-01-14 Siemens Ag Procédé de fabrication d'un transistor
FR1488176A (fr) * 1965-08-02 1967-07-07 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2085821A1 (fr) * 1970-04-03 1971-12-31 Rca Corp

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678573A (en) * 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3806361A (en) * 1972-01-24 1974-04-23 Motorola Inc Method of making electrical contacts for and passivating a semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1425087A (fr) * 1964-02-24 1966-01-14 Siemens Ag Procédé de fabrication d'un transistor
FR1488176A (fr) * 1965-08-02 1967-07-07 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2085821A1 (fr) * 1970-04-03 1971-12-31 Rca Corp

Also Published As

Publication number Publication date
JPS5151289A (fr) 1976-05-06
US3970487A (en) 1976-07-20
FR2286503B1 (fr) 1978-04-07
DE2445480A1 (de) 1976-04-01
GB1501894A (en) 1978-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse