FR2283549A1 - Procede de depot epitaxique a partir d'une phase liquide - Google Patents

Procede de depot epitaxique a partir d'une phase liquide

Info

Publication number
FR2283549A1
FR2283549A1 FR7429259A FR7429259A FR2283549A1 FR 2283549 A1 FR2283549 A1 FR 2283549A1 FR 7429259 A FR7429259 A FR 7429259A FR 7429259 A FR7429259 A FR 7429259A FR 2283549 A1 FR2283549 A1 FR 2283549A1
Authority
FR
France
Prior art keywords
cpds
substitution
iii
matl
epitaxial deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7429259A
Other languages
English (en)
French (fr)
Other versions
FR2283549B1 (enExample
Inventor
Elie Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7429259A priority Critical patent/FR2283549A1/fr
Publication of FR2283549A1 publication Critical patent/FR2283549A1/fr
Application granted granted Critical
Publication of FR2283549B1 publication Critical patent/FR2283549B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7429259A 1974-08-27 1974-08-27 Procede de depot epitaxique a partir d'une phase liquide Granted FR2283549A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7429259A FR2283549A1 (fr) 1974-08-27 1974-08-27 Procede de depot epitaxique a partir d'une phase liquide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7429259A FR2283549A1 (fr) 1974-08-27 1974-08-27 Procede de depot epitaxique a partir d'une phase liquide

Publications (2)

Publication Number Publication Date
FR2283549A1 true FR2283549A1 (fr) 1976-03-26
FR2283549B1 FR2283549B1 (enExample) 1978-03-24

Family

ID=9142605

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7429259A Granted FR2283549A1 (fr) 1974-08-27 1974-08-27 Procede de depot epitaxique a partir d'une phase liquide

Country Status (1)

Country Link
FR (1) FR2283549A1 (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2110961A1 (de) * 1970-03-24 1971-10-14 Texas Instruments Inc Verfahren zum epitaktischen Aufwachsen einer ternaeren III-V-Mischung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2110961A1 (de) * 1970-03-24 1971-10-14 Texas Instruments Inc Verfahren zum epitaktischen Aufwachsen einer ternaeren III-V-Mischung

Also Published As

Publication number Publication date
FR2283549B1 (enExample) 1978-03-24

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