FR2280974B1 - - Google Patents

Info

Publication number
FR2280974B1
FR2280974B1 FR7426821A FR7426821A FR2280974B1 FR 2280974 B1 FR2280974 B1 FR 2280974B1 FR 7426821 A FR7426821 A FR 7426821A FR 7426821 A FR7426821 A FR 7426821A FR 2280974 B1 FR2280974 B1 FR 2280974B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7426821A
Other versions
FR2280974A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7426821A priority Critical patent/FR2280974A1/fr
Priority to BE154347A priority patent/BE826703A/fr
Priority to DE2519360A priority patent/DE2519360C2/de
Priority to US05/595,751 priority patent/US4038111A/en
Priority to IT22750/75A priority patent/IT1038523B/it
Publication of FR2280974A1 publication Critical patent/FR2280974A1/fr
Application granted granted Critical
Publication of FR2280974B1 publication Critical patent/FR2280974B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7426821A 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus Granted FR2280974A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7426821A FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
BE154347A BE826703A (fr) 1974-08-01 1975-03-14 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
DE2519360A DE2519360C2 (de) 1974-08-01 1975-04-30 Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung
US05/595,751 US4038111A (en) 1974-08-01 1975-07-14 Method for diffusion of aluminium
IT22750/75A IT1038523B (it) 1974-08-01 1975-07-24 Procedimento di fabbricazione di semiconduttori comprendente almeno uno strato drogato all'alluminio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426821A FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Publications (2)

Publication Number Publication Date
FR2280974A1 FR2280974A1 (fr) 1976-02-27
FR2280974B1 true FR2280974B1 (fr) 1978-03-31

Family

ID=9142005

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7426821A Granted FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Country Status (5)

Country Link
US (1) US4038111A (fr)
BE (1) BE826703A (fr)
DE (1) DE2519360C2 (fr)
FR (1) FR2280974A1 (fr)
IT (1) IT1038523B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
FR2440083A1 (fr) * 1978-10-26 1980-05-23 Commissariat Energie Atomique Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques
DE2920673A1 (de) * 1979-05-22 1980-11-27 Licentia Gmbh Schichtbildende loesung
US4264383A (en) * 1979-08-23 1981-04-28 Westinghouse Electric Corp. Technique for making asymmetric thyristors
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
FR2771239B1 (fr) 1997-11-18 2000-12-08 Thomson Csf Procede de controle de flux d'information numerique
DE102011011200A1 (de) 2011-02-14 2012-08-16 Dechema Gesellschaft Für Chemische Technik Und Biotechnologie E.V. Verfahren zur Erzeugung von Diffusionsschichten ohne Aktivator über Metallfolien
CN116344689B (zh) * 2023-05-26 2023-07-21 中诚华隆计算机技术有限公司 一种具有涂层的发光芯片及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354005A (en) * 1965-10-23 1967-11-21 Western Electric Co Methods of applying doping compositions to base materials
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
DE2007753A1 (de) * 1970-02-19 1971-08-26 Siemens Ag Verfahren zum Herstellen von diffun dierten Halbleiterbauelementen unter Ver wendung von festen Dotierstoffquellen
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same

Also Published As

Publication number Publication date
US4038111A (en) 1977-07-26
DE2519360A1 (de) 1976-02-12
DE2519360C2 (de) 1983-03-03
BE826703A (fr) 1975-09-15
IT1038523B (it) 1979-11-30
FR2280974A1 (fr) 1976-02-27

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Legal Events

Date Code Title Description
ST Notification of lapse