FR2275885B1 - - Google Patents

Info

Publication number
FR2275885B1
FR2275885B1 FR7516713A FR7516713A FR2275885B1 FR 2275885 B1 FR2275885 B1 FR 2275885B1 FR 7516713 A FR7516713 A FR 7516713A FR 7516713 A FR7516713 A FR 7516713A FR 2275885 B1 FR2275885 B1 FR 2275885B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7516713A
Other languages
French (fr)
Other versions
FR2275885A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2275885A1 publication Critical patent/FR2275885A1/fr
Application granted granted Critical
Publication of FR2275885B1 publication Critical patent/FR2275885B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
FR7516713A 1974-05-28 1975-05-28 Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires Granted FR2275885A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/474,033 US3988762A (en) 1974-05-28 1974-05-28 Minority carrier isolation barriers for semiconductor devices

Publications (2)

Publication Number Publication Date
FR2275885A1 FR2275885A1 (fr) 1976-01-16
FR2275885B1 true FR2275885B1 (ref) 1979-03-23

Family

ID=23881929

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516713A Granted FR2275885A1 (fr) 1974-05-28 1975-05-28 Dispositif a semi-conducteur a barriere d'isolement des porteurs minoritaires

Country Status (4)

Country Link
US (1) US3988762A (ref)
JP (1) JPS513181A (ref)
DE (1) DE2523055A1 (ref)
FR (1) FR2275885A1 (ref)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184897A (en) * 1978-09-21 1980-01-22 General Electric Company Droplet migration doping using carrier droplets
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置
JPS6457438A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Recording medium
JPH05121540A (ja) * 1991-10-24 1993-05-18 Mitsubishi Electric Corp 半導体装置の製造方法
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
TW264575B (ref) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100319332B1 (ko) 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
DE19710375C2 (de) * 1997-03-13 2002-11-07 Micronas Semiconductor Holding Verfahren zum Herstellen von räumlich strukturierten Bauteilen
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
DE102009051828B4 (de) * 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
GB1250377A (ref) * 1968-08-24 1971-10-20
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device

Also Published As

Publication number Publication date
US3988762A (en) 1976-10-26
FR2275885A1 (fr) 1976-01-16
JPS513181A (en) 1976-01-12
DE2523055A1 (de) 1975-12-18

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Legal Events

Date Code Title Description
ST Notification of lapse