FR2273408A1 - Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber - Google Patents

Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber

Info

Publication number
FR2273408A1
FR2273408A1 FR7418589A FR7418589A FR2273408A1 FR 2273408 A1 FR2273408 A1 FR 2273408A1 FR 7418589 A FR7418589 A FR 7418589A FR 7418589 A FR7418589 A FR 7418589A FR 2273408 A1 FR2273408 A1 FR 2273408A1
Authority
FR
France
Prior art keywords
atomiser
cathodic
diode
chamber
impedance matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7418589A
Other languages
French (fr)
Other versions
FR2273408B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Original Assignee
Alcatel CIT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA filed Critical Alcatel CIT SA
Priority to FR7418589A priority Critical patent/FR2273408A1/en
Publication of FR2273408A1 publication Critical patent/FR2273408A1/en
Application granted granted Critical
Publication of FR2273408B1 publication Critical patent/FR2273408B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)

Abstract

A radio frequency voltage generator and a cathodic diode atomising device are impedance matched. The atomiser is arranged in a vacuum enclosure comprising the output of impedance adaptation circuit, the target and the substrate between which a plasma is formed. The plasma is produced due to the action of a variable electromagnetic field established whilst the target is supplied from the generator and the gas injected into the enclosure. Gas flow is controlled by a microvane. Impedance adaptation is achieved by regulation of the admission pressure of the injected gas without altering the value of the elements of the impedance adaptation circuit.
FR7418589A 1974-05-29 1974-05-29 Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber Granted FR2273408A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7418589A FR2273408A1 (en) 1974-05-29 1974-05-29 Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7418589A FR2273408A1 (en) 1974-05-29 1974-05-29 Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber

Publications (2)

Publication Number Publication Date
FR2273408A1 true FR2273408A1 (en) 1975-12-26
FR2273408B1 FR2273408B1 (en) 1976-12-24

Family

ID=9139394

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418589A Granted FR2273408A1 (en) 1974-05-29 1974-05-29 Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber

Country Status (1)

Country Link
FR (1) FR2273408A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2425480A1 (en) * 1978-05-13 1979-12-07 Leybold Heraeus Gmbh & Co Kg METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2425480A1 (en) * 1978-05-13 1979-12-07 Leybold Heraeus Gmbh & Co Kg METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT

Also Published As

Publication number Publication date
FR2273408B1 (en) 1976-12-24

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Legal Events

Date Code Title Description
ST Notification of lapse