FR2273408A1 - Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber - Google Patents
Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamberInfo
- Publication number
- FR2273408A1 FR2273408A1 FR7418589A FR7418589A FR2273408A1 FR 2273408 A1 FR2273408 A1 FR 2273408A1 FR 7418589 A FR7418589 A FR 7418589A FR 7418589 A FR7418589 A FR 7418589A FR 2273408 A1 FR2273408 A1 FR 2273408A1
- Authority
- FR
- France
- Prior art keywords
- atomiser
- cathodic
- diode
- chamber
- impedance matching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Abstract
A radio frequency voltage generator and a cathodic diode atomising device are impedance matched. The atomiser is arranged in a vacuum enclosure comprising the output of impedance adaptation circuit, the target and the substrate between which a plasma is formed. The plasma is produced due to the action of a variable electromagnetic field established whilst the target is supplied from the generator and the gas injected into the enclosure. Gas flow is controlled by a microvane. Impedance adaptation is achieved by regulation of the admission pressure of the injected gas without altering the value of the elements of the impedance adaptation circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7418589A FR2273408A1 (en) | 1974-05-29 | 1974-05-29 | Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7418589A FR2273408A1 (en) | 1974-05-29 | 1974-05-29 | Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2273408A1 true FR2273408A1 (en) | 1975-12-26 |
FR2273408B1 FR2273408B1 (en) | 1976-12-24 |
Family
ID=9139394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7418589A Granted FR2273408A1 (en) | 1974-05-29 | 1974-05-29 | Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2273408A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2425480A1 (en) * | 1978-05-13 | 1979-12-07 | Leybold Heraeus Gmbh & Co Kg | METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT |
-
1974
- 1974-05-29 FR FR7418589A patent/FR2273408A1/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2425480A1 (en) * | 1978-05-13 | 1979-12-07 | Leybold Heraeus Gmbh & Co Kg | METHOD AND DEVICE FOR REGULATING THE DISCHARGE IN A CATHODIC SPRAYING EQUIPMENT |
Also Published As
Publication number | Publication date |
---|---|
FR2273408B1 (en) | 1976-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970021370A (en) | Plasma CVD Apparatus and Method and Dry Etching Apparatus and Method | |
TWI538051B (en) | Plasma processing device | |
GB2272995B (en) | Method for making or treating a semiconductor | |
WO1997013266A3 (en) | Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith | |
ATE430376T1 (en) | PLASMA REACTOR FOR THE TREATMENT OF LARGE-AREA SUBSTRATES | |
DE69033908T2 (en) | High density plasma deposition and etching facility | |
KR860000703A (en) | Apparatus and method for depositing a film on a substrate by glow discharge decomposition | |
GB1405489A (en) | Sputtering apparatus | |
FR2273408A1 (en) | Impedance matching for RF cathodic diode atomiser - by adjusting press. of gas admitted to chamber | |
GB1358647A (en) | Apparatus for reacting a gas with a material in an electromagnetic field | |
JP2016105489A (en) | Plasma processing apparatus | |
FR2232832A1 (en) | Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply | |
JPH07142453A (en) | Plasma etching system | |
JPS5543226A (en) | Pump | |
JPS5732637A (en) | Dry etching apparatus | |
WO2004071938A3 (en) | Improved megasonic cleaning efficiency using auto- tuning of an rf generator at constant maximum efficiency | |
TW202044327A (en) | Method and apparatus of multi-frequency and multi-stage radio frequency plasma output can have faster switching speed, and can switch the frequency of the radio frequency with the power in the pulse mode | |
JPS5229141A (en) | Amplifier | |
JPS52122284A (en) | Sputtering device having bias electrode | |
RU145556U1 (en) | HIGH-FREQUENCY RADIATION GENERATOR BASED ON A Hollow Cathode Discharge | |
JP5145699B2 (en) | Plasma processing apparatus and plasma processing method | |
GB645322A (en) | Improvements in and relating to stabilized oscillators incorporating electron discharge tubes | |
JPS5696841A (en) | Microwave plasma treating apparatus | |
JPS52122283A (en) | Sputtering device having bias mechanism | |
JPS5770272A (en) | Apparatus for controlling high frequency exciting type ion plating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |