FR2270677B1 - - Google Patents

Info

Publication number
FR2270677B1
FR2270677B1 FR7405790A FR7405790A FR2270677B1 FR 2270677 B1 FR2270677 B1 FR 2270677B1 FR 7405790 A FR7405790 A FR 7405790A FR 7405790 A FR7405790 A FR 7405790A FR 2270677 B1 FR2270677 B1 FR 2270677B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7405790A
Other languages
French (fr)
Other versions
FR2270677A1 (
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7405790A priority Critical patent/FR2270677B1/fr
Priority to BE153318A priority patent/BE825484A/xx
Priority to GB695875A priority patent/GB1490798A/en
Priority to IT2043175A priority patent/IT1031868B/it
Priority to DE19752507344 priority patent/DE2507344A1/de
Publication of FR2270677A1 publication Critical patent/FR2270677A1/fr
Application granted granted Critical
Publication of FR2270677B1 publication Critical patent/FR2270677B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7405790A 1974-02-20 1974-02-20 Expired FR2270677B1 ( )

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7405790A FR2270677B1 ( ) 1974-02-20 1974-02-20
BE153318A BE825484A (fr) 1974-02-20 1975-02-13 Procede de diffusion profonde d'impuretes dans un substrat
GB695875A GB1490798A (en) 1974-02-20 1975-02-19 Method for diffusing impurities in a substrate
IT2043175A IT1031868B (it) 1974-02-20 1975-02-19 Procedimento di diffusione profonda di impeurita in un substrato
DE19752507344 DE2507344A1 (de) 1974-02-20 1975-02-20 Verfahren zum diffundieren von verunreinigungen in ein substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7405790A FR2270677B1 ( ) 1974-02-20 1974-02-20

Publications (2)

Publication Number Publication Date
FR2270677A1 FR2270677A1 ( ) 1975-12-05
FR2270677B1 true FR2270677B1 ( ) 1978-12-01

Family

ID=9135195

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7405790A Expired FR2270677B1 ( ) 1974-02-20 1974-02-20

Country Status (5)

Country Link
BE (1) BE825484A ( )
DE (1) DE2507344A1 ( )
FR (1) FR2270677B1 ( )
GB (1) GB1490798A ( )
IT (1) IT1031868B ( )

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
DE2857837C2 (de) * 1977-10-26 1983-07-14 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung einer Halbleitervorrichtung

Also Published As

Publication number Publication date
FR2270677A1 ( ) 1975-12-05
DE2507344A1 (de) 1975-08-21
BE825484A (fr) 1975-08-13
IT1031868B (it) 1979-05-10
GB1490798A (en) 1977-11-02

Similar Documents

Publication Publication Date Title
FR2257552A1 ( )
FR2274187B1 ( )
FR2274029B1 ( )
FR2260269A7 ( )
FR2264622A1 ( )
DK147775A ( )
FR2270677B1 ( )
FR2283384B1 ( )
FR2272066A1 ( )
FR2265381A1 ( )
DE2435804A1 ( )
CH568134A5 ( )
CH17274A4 ( )
DD120717A1 ( )
DD119080A2 ( )
AU479765A ( )
CH600930A5 ( )
CH597213A5 ( )
CH585581A5 ( )
CH579652A5 ( )
CH569666A5 ( )
CH569220A5 ( )
CH568539A5 ( )
CH1727074A4 ( )
CH566915A5 ( )

Legal Events

Date Code Title Description
ST Notification of lapse