FR2262405A1 - Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber - Google Patents

Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber

Info

Publication number
FR2262405A1
FR2262405A1 FR7406467A FR7406467A FR2262405A1 FR 2262405 A1 FR2262405 A1 FR 2262405A1 FR 7406467 A FR7406467 A FR 7406467A FR 7406467 A FR7406467 A FR 7406467A FR 2262405 A1 FR2262405 A1 FR 2262405A1
Authority
FR
France
Prior art keywords
cleaning
manufacture
heating
fast switching
use same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7406467A
Other languages
English (en)
French (fr)
Other versions
FR2262405B3 (Direct
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7406467A priority Critical patent/FR2262405A1/fr
Publication of FR2262405A1 publication Critical patent/FR2262405A1/fr
Application granted granted Critical
Publication of FR2262405B3 publication Critical patent/FR2262405B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/20—

Landscapes

  • Thyristors (AREA)
FR7406467A 1974-02-26 1974-02-26 Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber Granted FR2262405A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7406467A FR2262405A1 (en) 1974-02-26 1974-02-26 Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7406467A FR2262405A1 (en) 1974-02-26 1974-02-26 Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber

Publications (2)

Publication Number Publication Date
FR2262405A1 true FR2262405A1 (en) 1975-09-19
FR2262405B3 FR2262405B3 (Direct) 1976-12-03

Family

ID=9135454

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7406467A Granted FR2262405A1 (en) 1974-02-26 1974-02-26 Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber

Country Status (1)

Country Link
FR (1) FR2262405A1 (Direct)

Also Published As

Publication number Publication date
FR2262405B3 (Direct) 1976-12-03

Similar Documents

Publication Publication Date Title
US3149395A (en) Method of making a varactor diode by epitaxial growth and diffusion
GB1170016A (en) Improvements in or relating to the manufacture of semiconductor components
US2762730A (en) Method of making barriers in semiconductors
GB1199399A (en) Improvements in or relating to the Manufacture of Semiconductors.
FR2262405A1 (en) Manufacture of fast switching semiconductors - uses RF heating, cleaning and doping processes use same vaccum chamber
JPS6466932A (en) Epitaxial silicon wafer
CA2018976A1 (en) Doping procedures for semiconductor devices
JPS5271171A (en) Production of epitaxial wafer
GB1126338A (en) A method of producing semiconductor bodies with an extremely low-resistance substrate
US3354007A (en) Method of forming a semiconductor by diffusion by using a crystal masking technique
US2979429A (en) Diffused transistor and method of making
US3303070A (en) Simulataneous double diffusion process
JPS53126866A (en) Production of semiconductor wafers
GB1007555A (en) Semiconductor material
JPS6477120A (en) Formation of wiring of semiconductor device
US3162557A (en) Selective removal of impurities from semiconductor bodies
US3257246A (en) Methods for manufacturing semiconductor devices
US2861017A (en) Method of preparing semi-conductor devices
US3282749A (en) Method of controlling diffusion
US3167462A (en) Method of forming alloyed regions in semiconductor bodies
US3257247A (en) Method of forming a p-n junction
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS5548927A (en) Preparation of semiconductor element
FR2222135A1 (en) Heterogeneous epitaxial growth of semiconductor material - using silicon substrate doped at least in part adjacent to its growth surface
GB1031193A (en) A process for use in the production of substantially monocrystalline wafers

Legal Events

Date Code Title Description
TP Transmission of property