FR2259436B1 - - Google Patents

Info

Publication number
FR2259436B1
FR2259436B1 FR7402408A FR7402408A FR2259436B1 FR 2259436 B1 FR2259436 B1 FR 2259436B1 FR 7402408 A FR7402408 A FR 7402408A FR 7402408 A FR7402408 A FR 7402408A FR 2259436 B1 FR2259436 B1 FR 2259436B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7402408A
Other languages
French (fr)
Other versions
FR2259436A1 (it
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7402408A priority Critical patent/FR2259436B1/fr
Priority to GB178375A priority patent/GB1486733A/en
Priority to DE19752502689 priority patent/DE2502689A1/de
Priority to JP1038475A priority patent/JPS50109684A/ja
Publication of FR2259436A1 publication Critical patent/FR2259436A1/fr
Application granted granted Critical
Publication of FR2259436B1 publication Critical patent/FR2259436B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/355—Monostable circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7402408A 1974-01-24 1974-01-24 Expired FR2259436B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7402408A FR2259436B1 (it) 1974-01-24 1974-01-24
GB178375A GB1486733A (en) 1974-01-24 1975-01-15 Integrated circuits
DE19752502689 DE2502689A1 (de) 1974-01-24 1975-01-23 Verfahren und integrierte mos- schaltung zur erzeugung einer spannung
JP1038475A JPS50109684A (it) 1974-01-24 1975-01-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402408A FR2259436B1 (it) 1974-01-24 1974-01-24

Publications (2)

Publication Number Publication Date
FR2259436A1 FR2259436A1 (it) 1975-08-22
FR2259436B1 true FR2259436B1 (it) 1978-01-13

Family

ID=9133936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7402408A Expired FR2259436B1 (it) 1974-01-24 1974-01-24

Country Status (4)

Country Link
JP (1) JPS50109684A (it)
DE (1) DE2502689A1 (it)
FR (1) FR2259436B1 (it)
GB (1) GB1486733A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2826624C2 (de) * 1978-06-19 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte IGFET-Konstantstromquelle
JPS5522831A (en) * 1978-08-04 1980-02-18 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device
US4321484A (en) * 1979-02-28 1982-03-23 International Business Machines Corporation Field effect transistor multivibrator
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
NL8001558A (nl) * 1980-03-17 1981-10-16 Philips Nv Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype.
DE3027455C2 (de) * 1980-07-19 1984-07-12 Telefunken electronic GmbH, 7100 Heilbronn Integrierte astabile Kippstufe
DE3027456C2 (de) * 1980-07-19 1984-11-15 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET
DE3038197A1 (de) * 1980-10-09 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung zur elektronischen stabilisierung des betriebsstromes eines mindestens eine gateelektrode aufweisenden betriebsfeldeffekttransistors
JP2746117B2 (ja) * 1993-05-25 1998-04-28 日本電気株式会社 基板バイアス回路

Also Published As

Publication number Publication date
FR2259436A1 (it) 1975-08-22
GB1486733A (en) 1977-09-21
DE2502689A1 (de) 1975-07-31
JPS50109684A (it) 1975-08-28

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Legal Events

Date Code Title Description
ST Notification of lapse