FR2259436A1 - - Google Patents

Info

Publication number
FR2259436A1
FR2259436A1 FR7402408A FR7402408A FR2259436A1 FR 2259436 A1 FR2259436 A1 FR 2259436A1 FR 7402408 A FR7402408 A FR 7402408A FR 7402408 A FR7402408 A FR 7402408A FR 2259436 A1 FR2259436 A1 FR 2259436A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7402408A
Other languages
French (fr)
Other versions
FR2259436B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7402408A priority Critical patent/FR2259436B1/fr
Priority to GB1783/75A priority patent/GB1486733A/en
Priority to DE19752502689 priority patent/DE2502689A1/de
Priority to JP50010384A priority patent/JPS50109684A/ja
Publication of FR2259436A1 publication Critical patent/FR2259436A1/fr
Application granted granted Critical
Publication of FR2259436B1 publication Critical patent/FR2259436B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/355—Monostable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
FR7402408A 1974-01-24 1974-01-24 Expired FR2259436B1 (enrdf_load_stackoverflow)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7402408A FR2259436B1 (enrdf_load_stackoverflow) 1974-01-24 1974-01-24
GB1783/75A GB1486733A (en) 1974-01-24 1975-01-15 Integrated circuits
DE19752502689 DE2502689A1 (de) 1974-01-24 1975-01-23 Verfahren und integrierte mos- schaltung zur erzeugung einer spannung
JP50010384A JPS50109684A (enrdf_load_stackoverflow) 1974-01-24 1975-01-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7402408A FR2259436B1 (enrdf_load_stackoverflow) 1974-01-24 1974-01-24

Publications (2)

Publication Number Publication Date
FR2259436A1 true FR2259436A1 (enrdf_load_stackoverflow) 1975-08-22
FR2259436B1 FR2259436B1 (enrdf_load_stackoverflow) 1978-01-13

Family

ID=9133936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7402408A Expired FR2259436B1 (enrdf_load_stackoverflow) 1974-01-24 1974-01-24

Country Status (4)

Country Link
JP (1) JPS50109684A (enrdf_load_stackoverflow)
DE (1) DE2502689A1 (enrdf_load_stackoverflow)
FR (1) FR2259436B1 (enrdf_load_stackoverflow)
GB (1) GB1486733A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2434425A1 (fr) * 1978-06-19 1980-03-21 Itt Source de courant constant integree a transistors a effet de champ a porte isolee

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522831A (en) * 1978-08-04 1980-02-18 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device
US4321484A (en) * 1979-02-28 1982-03-23 International Business Machines Corporation Field effect transistor multivibrator
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
NL8001558A (nl) * 1980-03-17 1981-10-16 Philips Nv Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype.
DE3027456C2 (de) * 1980-07-19 1984-11-15 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET
DE3027455C2 (de) * 1980-07-19 1984-07-12 Telefunken electronic GmbH, 7100 Heilbronn Integrierte astabile Kippstufe
DE3038197A1 (de) * 1980-10-09 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung zur elektronischen stabilisierung des betriebsstromes eines mindestens eine gateelektrode aufweisenden betriebsfeldeffekttransistors
JP2746117B2 (ja) * 1993-05-25 1998-04-28 日本電気株式会社 基板バイアス回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2434425A1 (fr) * 1978-06-19 1980-03-21 Itt Source de courant constant integree a transistors a effet de champ a porte isolee

Also Published As

Publication number Publication date
DE2502689A1 (de) 1975-07-31
FR2259436B1 (enrdf_load_stackoverflow) 1978-01-13
JPS50109684A (enrdf_load_stackoverflow) 1975-08-28
GB1486733A (en) 1977-09-21

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Legal Events

Date Code Title Description
ST Notification of lapse