FR2245085A1 - Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system - Google Patents

Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system

Info

Publication number
FR2245085A1
FR2245085A1 FR7431222A FR7431222A FR2245085A1 FR 2245085 A1 FR2245085 A1 FR 2245085A1 FR 7431222 A FR7431222 A FR 7431222A FR 7431222 A FR7431222 A FR 7431222A FR 2245085 A1 FR2245085 A1 FR 2245085A1
Authority
FR
France
Prior art keywords
communication system
large surface
diode
cathode
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431222A
Other languages
French (fr)
Other versions
FR2245085B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732348254 external-priority patent/DE2348254C3/en
Priority claimed from DE19732348892 external-priority patent/DE2348892C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2245085A1 publication Critical patent/FR2245085A1/en
Application granted granted Critical
Publication of FR2245085B1 publication Critical patent/FR2245085B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B3/00—Line transmission systems
    • H04B3/02—Details
    • H04B3/44—Arrangements for feeding power to a repeater along the transmission line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The semiconductor arrangement is particularly usable to replace a large surface diode in a monolithic component for a telephone communication system. A diode (D) short circuits the path between a principal electrode (cathode n) of a thyristor (T) and the base (base n) of this thyristor, and that the conductivity type (n) of the layer (cathode) of the diode (D) which is connected to the principal electrode (cathode n) of thyristor (T) is the same type as the conductivity type (n) of this principal electrode (cathode n). The semiconductors arrangement provides rectifying characteristics and is designed to give particularly low resistance in the forward direction.
FR7431222A 1973-09-25 1974-09-16 Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system Granted FR2245085A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19732348254 DE2348254C3 (en) 1973-09-25 1973-09-25 Use of a circuit arrangement with an increased ratio of conduction conductance to blocking conductance in comparison to pn diodes in a telephone switching system
DE19732348892 DE2348892C3 (en) 1973-09-28 1973-09-28 Circuit arrangement used in a telephone switching system with an increased ratio of conduction conductance to blocking conductance compared to pn diodes

Publications (2)

Publication Number Publication Date
FR2245085A1 true FR2245085A1 (en) 1975-04-18
FR2245085B1 FR2245085B1 (en) 1979-02-16

Family

ID=25765864

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431222A Granted FR2245085A1 (en) 1973-09-25 1974-09-16 Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system

Country Status (5)

Country Link
AT (1) AT334984B (en)
CH (1) CH574169A5 (en)
FR (1) FR2245085A1 (en)
IT (1) IT1022202B (en)
LU (1) LU70686A1 (en)

Also Published As

Publication number Publication date
AT334984B (en) 1977-02-10
IT1022202B (en) 1978-03-20
CH574169A5 (en) 1976-03-31
FR2245085B1 (en) 1979-02-16
ATA761774A (en) 1976-06-15
LU70686A1 (en) 1974-12-10

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Legal Events

Date Code Title Description
ST Notification of lapse