FR2244264A1 - - Google Patents

Info

Publication number
FR2244264A1
FR2244264A1 FR7431590A FR7431590A FR2244264A1 FR 2244264 A1 FR2244264 A1 FR 2244264A1 FR 7431590 A FR7431590 A FR 7431590A FR 7431590 A FR7431590 A FR 7431590A FR 2244264 A1 FR2244264 A1 FR 2244264A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431590A
Other languages
French (fr)
Other versions
FR2244264B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP48105715A external-priority patent/JPS5910075B2/ja
Priority claimed from JP5895874A external-priority patent/JPS5730301B2/ja
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of FR2244264A1 publication Critical patent/FR2244264A1/fr
Application granted granted Critical
Publication of FR2244264B1 publication Critical patent/FR2244264B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W44/20—
    • H10W76/134—
    • H10W76/157—
    • H10W76/40—
    • H10W70/682—
    • H10W70/685—
    • H10W72/5445—
    • H10W72/552—
FR7431590A 1973-09-19 1974-09-18 Expired FR2244264B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP48105715A JPS5910075B2 (ja) 1973-09-19 1973-09-19 電界効果型トランジスタ
JP5895874A JPS5730301B2 (enExample) 1974-05-24 1974-05-24

Publications (2)

Publication Number Publication Date
FR2244264A1 true FR2244264A1 (enExample) 1975-04-11
FR2244264B1 FR2244264B1 (enExample) 1979-02-16

Family

ID=26399977

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431590A Expired FR2244264B1 (enExample) 1973-09-19 1974-09-18

Country Status (2)

Country Link
US (1) US3946428A (enExample)
FR (1) FR2244264B1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure
FR2529385A1 (fr) * 1982-06-29 1983-12-30 Thomson Csf Microboitier d'encapsulation de circuits integres logiques fonctionnant en tres haute frequence
FR2536586A1 (fr) * 1982-11-23 1984-05-25 Thomson Csf Module preadapte pour diode hyperfrequence a forte dissipation thermique
EP0110997A4 (en) * 1982-04-30 1986-07-08 Fujitsu Ltd Semiconductor device package.
EP0209642A3 (en) * 1985-07-25 1987-04-15 Hewlett-Packard Company Ceramic microcircuit package
EP0424647A3 (en) * 1989-09-22 1991-10-30 Telefunken Electronic Gmbh Semiconductor component having carrier plates
EP0452752A3 (en) * 1990-04-16 1992-04-15 Fujitsu Limited Chip carrier for enabling production of high performance microwave semiconductor device by disposing semiconductor chip thereon
EP0818823A3 (en) * 1996-06-13 1999-04-21 Matsushita Electric Industrial Co., Ltd. Radio frequency module and method for fabricating the radio frequency module

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150393A (en) * 1975-09-29 1979-04-17 Motorola, Inc. High frequency semiconductor package
JPS5386576A (en) * 1977-01-10 1978-07-31 Nec Corp Package for semiconductor element
JPS5471572A (en) * 1977-11-18 1979-06-08 Fujitsu Ltd Semiconductor device
US4240098A (en) * 1978-09-28 1980-12-16 Exxon Research & Engineering Co. Semiconductor optoelectronic device package
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
US4510519A (en) * 1982-03-26 1985-04-09 Motorola, Inc. Electrically isolated semiconductor power device
US4583283A (en) * 1982-03-26 1986-04-22 Motorola, Inc. Electrically isolated semiconductor power device
US4550333A (en) * 1983-09-13 1985-10-29 Xerox Corporation Light emitting semiconductor mount
US4649416A (en) * 1984-01-03 1987-03-10 Raytheon Company Microwave transistor package
USD288557S (en) 1984-09-10 1987-03-03 Motorola, Inc. Semiconductor housing
EP0180906B1 (de) * 1984-11-02 1989-01-18 Siemens Aktiengesellschaft Wellenwiderstandsgetreuer Chipträger für Mikrowellenhalbleiter
CA1264380C (en) * 1985-01-30 1990-01-09 SEMICONDUCTOR DEVICE BOX WITH INTEGRATED GROUNDING CONDUCTOR AND SIDEWALL
US4701573A (en) * 1985-09-26 1987-10-20 Itt Gallium Arsenide Technology Center Semiconductor chip housing
US4774630A (en) * 1985-09-30 1988-09-27 Microelectronics Center Of North Carolina Apparatus for mounting a semiconductor chip and making electrical connections thereto
JPH0740600B2 (ja) * 1987-04-30 1995-05-01 三菱電機株式会社 半導体装置
US4839716A (en) * 1987-06-01 1989-06-13 Olin Corporation Semiconductor packaging
EP0308749A3 (de) * 1987-09-25 1990-07-11 Siemens Aktiengesellschaft Elektrooptische Baugruppe
JPH0770641B2 (ja) * 1989-03-17 1995-07-31 三菱電機株式会社 半導体パッケージ
JPH0750767B2 (ja) * 1989-09-07 1995-05-31 マツダ株式会社 金属基板を有する集積回路
JPH03227585A (ja) * 1989-10-30 1991-10-08 Minolta Camera Co Ltd レ−ザ光源ユニット
US6172412B1 (en) * 1993-10-08 2001-01-09 Stratedge Corporation High frequency microelectronics package
US5736783A (en) * 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
US5465008A (en) * 1993-10-08 1995-11-07 Stratedge Corporation Ceramic microelectronics package
US5753972A (en) * 1993-10-08 1998-05-19 Stratedge Corporation Microelectronics package
GB2298957A (en) * 1995-03-16 1996-09-18 Oxley Dev Co Ltd Microstrip microwave package
US5714794A (en) * 1995-04-18 1998-02-03 Hitachi Chemical Company, Ltd. Electrostatic protective device
SE512710C2 (sv) 1998-07-08 2000-05-02 Ericsson Telefon Ab L M Kapsel för högeffekttransistorchip för höga frekvenser innefattande en elektriskt och termiskt ledande fläns
US7075174B2 (en) * 2004-02-26 2006-07-11 Agere Systems Inc. Semiconductor packaging techniques for use with non-ceramic packages
CN100550442C (zh) * 2004-10-22 2009-10-14 皇家飞利浦电子股份有限公司 发光装置和制造这种装置的方法
JP2009123736A (ja) * 2007-11-12 2009-06-04 Nec Corp デバイスの実装構造及びデバイスの実装方法
US8649811B2 (en) * 2010-07-13 2014-02-11 Shiquan Wu Embryo frequency leakage for personalized wireless communication system
EP2500938A1 (en) * 2011-03-17 2012-09-19 Nxp B.V. Package for a semiconductor device, and a method of manufacturing such package
JP6365215B2 (ja) * 2014-10-15 2018-08-01 三菱電機株式会社 半導体装置の製造方法
JP6781021B2 (ja) * 2016-11-29 2020-11-04 モレックス エルエルシー 電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (enExample) * 1969-04-30 1900-01-01
BE757968A (fr) * 1969-10-25 1971-04-23 Philips Nv Dispositif a micro-ondes
US3828228A (en) * 1973-03-05 1974-08-06 Hewlett Packard Co Microwave transistor package

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021643A1 (en) * 1979-06-08 1981-01-07 Fujitsu Limited Semiconductor device having a soft-error preventing structure
EP0110997A4 (en) * 1982-04-30 1986-07-08 Fujitsu Ltd Semiconductor device package.
FR2529385A1 (fr) * 1982-06-29 1983-12-30 Thomson Csf Microboitier d'encapsulation de circuits integres logiques fonctionnant en tres haute frequence
EP0101335A1 (fr) * 1982-06-29 1984-02-22 Thomson-Csf Microboîtier d'encapsulation de circuits intégrés logiques fonctionnant en très haute fréquence
FR2536586A1 (fr) * 1982-11-23 1984-05-25 Thomson Csf Module preadapte pour diode hyperfrequence a forte dissipation thermique
US4566027A (en) * 1982-11-23 1986-01-21 Thomson-Csf Pre-matched module for an ultra-high frequency diode with high heat dissipation
EP0109899A1 (fr) * 1982-11-23 1984-05-30 Thomson-Csf Module préadapté pour diode hyperfréquence à forte dissipation thermique
EP0209642A3 (en) * 1985-07-25 1987-04-15 Hewlett-Packard Company Ceramic microcircuit package
EP0424647A3 (en) * 1989-09-22 1991-10-30 Telefunken Electronic Gmbh Semiconductor component having carrier plates
EP0452752A3 (en) * 1990-04-16 1992-04-15 Fujitsu Limited Chip carrier for enabling production of high performance microwave semiconductor device by disposing semiconductor chip thereon
US5477083A (en) * 1990-04-16 1995-12-19 Fujitsu Limited Chip carrier for enabling production of high performance microwave semiconductor device by disposing semiconductor chip thereon
EP0818823A3 (en) * 1996-06-13 1999-04-21 Matsushita Electric Industrial Co., Ltd. Radio frequency module and method for fabricating the radio frequency module
US6158116A (en) * 1996-06-13 2000-12-12 Matsushita Electric Industrial Co., Ltd. Radio frequency module and method for fabricating the radio frequency module
US6301122B1 (en) 1996-06-13 2001-10-09 Matsushita Electric Industrial Co., Ltd. Radio frequency module with thermally and electrically coupled metal film on insulating substrate

Also Published As

Publication number Publication date
FR2244264B1 (enExample) 1979-02-16
US3946428A (en) 1976-03-23

Similar Documents

Publication Publication Date Title
AR201758A1 (enExample)
AR201235Q (enExample)
AR201231Q (enExample)
AU471343B2 (enExample)
AR201229Q (enExample)
AR199451A1 (enExample)
AR195311A1 (enExample)
AR210729A1 (enExample)
AR196382A1 (enExample)
AR195948A1 (enExample)
AR201432A1 (enExample)
AR200256A1 (enExample)
AR200885A1 (enExample)
AR193950A1 (enExample)
AR197627A1 (enExample)
AU447540B2 (enExample)
AR196212Q (enExample)
AR196123Q (enExample)
AU1891376A (enExample)
CH562158A5 (enExample)
AU479404A (enExample)
BG19341A1 (enExample)
BG19322A1 (enExample)
CH559304A5 (enExample)
BG18966A1 (enExample)