FR2228540B1 - - Google Patents
Info
- Publication number
- FR2228540B1 FR2228540B1 FR7317261A FR7317261A FR2228540B1 FR 2228540 B1 FR2228540 B1 FR 2228540B1 FR 7317261 A FR7317261 A FR 7317261A FR 7317261 A FR7317261 A FR 7317261A FR 2228540 B1 FR2228540 B1 FR 2228540B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7317261A FR2228540B1 (it) | 1973-05-11 | 1973-05-11 | |
BE143276A BE813808A (fr) | 1973-05-11 | 1974-04-17 | Procede et dispositif pour la preparation de tellurure de cadmium dope |
GB1751174A GB1434437A (en) | 1973-05-11 | 1974-04-22 | Method and device for the preparation of doped cadmium telluride |
DE2422251A DE2422251C2 (de) | 1973-05-11 | 1974-05-08 | Verfahren zur Herstellung eines dotierten Cadmiumtellurid-Einkristalls |
IT68444/74A IT1014137B (it) | 1973-05-11 | 1974-05-08 | Procedimento e dispositivo per la preparazione del telleruro di cadmiodrogato |
NLAANVRAGE7406301,A NL179927C (nl) | 1973-05-11 | 1974-05-10 | Werkwijze voor het vervaardigen van een eenkristal van gedoteerd cadmiumtelluride, alsmede halfgeleiderinrichting. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7317261A FR2228540B1 (it) | 1973-05-11 | 1973-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2228540A1 FR2228540A1 (it) | 1974-12-06 |
FR2228540B1 true FR2228540B1 (it) | 1978-02-10 |
Family
ID=9119239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7317261A Expired FR2228540B1 (it) | 1973-05-11 | 1973-05-11 |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE813808A (it) |
DE (1) | DE2422251C2 (it) |
FR (1) | FR2228540B1 (it) |
GB (1) | GB1434437A (it) |
IT (1) | IT1014137B (it) |
NL (1) | NL179927C (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593196B1 (fr) * | 1986-01-21 | 1988-04-15 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hg1-xo cdxo te |
EP0261647A3 (en) * | 1986-09-26 | 1989-08-16 | Nippon Mining Company Limited | High resistivity cdte crystal and process for producing the same |
FR2629476B1 (fr) * | 1988-04-01 | 1990-11-30 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hgcdte |
FR2703696B1 (fr) * | 1993-04-08 | 1995-06-09 | Eurorad 2 6 Sarl | Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau. |
CN109594124A (zh) * | 2018-12-29 | 2019-04-09 | 珠海鼎泰芯源晶体有限公司 | 晶体生长的加热装置及生长装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1129789A (en) * | 1966-03-26 | 1968-10-09 | Matsushita Electronics Corp | Process for producing cadmium telluride crystal |
-
1973
- 1973-05-11 FR FR7317261A patent/FR2228540B1/fr not_active Expired
-
1974
- 1974-04-17 BE BE143276A patent/BE813808A/xx not_active IP Right Cessation
- 1974-04-22 GB GB1751174A patent/GB1434437A/en not_active Expired
- 1974-05-08 DE DE2422251A patent/DE2422251C2/de not_active Expired
- 1974-05-08 IT IT68444/74A patent/IT1014137B/it active
- 1974-05-10 NL NLAANVRAGE7406301,A patent/NL179927C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2228540A1 (it) | 1974-12-06 |
DE2422251A1 (de) | 1974-11-28 |
GB1434437A (en) | 1976-05-05 |
NL7406301A (it) | 1974-11-13 |
DE2422251C2 (de) | 1985-09-19 |
BE813808A (fr) | 1974-08-16 |
NL179927C (nl) | 1986-12-01 |
NL179927B (nl) | 1986-07-01 |
IT1014137B (it) | 1977-04-20 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences |