FR2228301A1 - - Google Patents

Info

Publication number
FR2228301A1
FR2228301A1 FR7410669A FR7410669A FR2228301A1 FR 2228301 A1 FR2228301 A1 FR 2228301A1 FR 7410669 A FR7410669 A FR 7410669A FR 7410669 A FR7410669 A FR 7410669A FR 2228301 A1 FR2228301 A1 FR 2228301A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7410669A
Other versions
FR2228301B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2228301A1 publication Critical patent/FR2228301A1/fr
Application granted granted Critical
Publication of FR2228301B1 publication Critical patent/FR2228301B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7410669A 1973-05-03 1974-03-19 Expired FR2228301B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (2)

Publication Number Publication Date
FR2228301A1 true FR2228301A1 (fr) 1974-11-29
FR2228301B1 FR2228301B1 (fr) 1977-10-14

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7410669A Expired FR2228301B1 (fr) 1973-05-03 1974-03-19

Country Status (6)

Country Link
JP (1) JPS522272B2 (fr)
CA (1) CA1017462A (fr)
DE (1) DE2419704A1 (fr)
FR (1) FR2228301B1 (fr)
GB (1) GB1452805A (fr)
IT (1) IT1006474B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (zh) * 2004-05-21 2013-05-21 Takeda Pharmaceutical 環狀醯胺衍生物、以及其製品和用法
JP5943065B2 (ja) * 2012-03-05 2016-06-29 株式会社村田製作所 接合方法、電子装置の製造方法、および電子部品

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1398424A (fr) * 1963-06-28 1965-05-07 Ibm Dispositif semi-conducteur
FR1571223A (fr) * 1967-09-29 1969-06-13
FR1585978A (fr) * 1967-09-26 1970-02-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1398424A (fr) * 1963-06-28 1965-05-07 Ibm Dispositif semi-conducteur
FR1585978A (fr) * 1967-09-26 1970-02-06
FR1571223A (fr) * 1967-09-29 1969-06-13

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANALYSIS OF EVAPORATED METAL INTERCONNECTIONS AT CONTACT WINDOWS", TAKAYUKI YANAGANA ET ISAO *
REVUE US "IEEE TRANSACTIONS ON ELECTRON DEVICES", VOLUME ED 17, NO.11, NOVEMBRE 1970, "FAILURE *
TAKEKOSHI, PAGES 964-970) *

Also Published As

Publication number Publication date
GB1452805A (en) 1976-10-20
JPS5011391A (fr) 1975-02-05
FR2228301B1 (fr) 1977-10-14
JPS522272B2 (fr) 1977-01-20
DE2419704A1 (de) 1974-11-21
IT1006474B (it) 1976-09-30
CA1017462A (en) 1977-09-13

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Legal Events

Date Code Title Description
ST Notification of lapse