FR2227640B1 - - Google Patents

Info

Publication number
FR2227640B1
FR2227640B1 FR7315461A FR7315461A FR2227640B1 FR 2227640 B1 FR2227640 B1 FR 2227640B1 FR 7315461 A FR7315461 A FR 7315461A FR 7315461 A FR7315461 A FR 7315461A FR 2227640 B1 FR2227640 B1 FR 2227640B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7315461A
Other languages
French (fr)
Other versions
FR2227640A1 (en:Method
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7315461A priority Critical patent/FR2227640B1/fr
Priority to DE2418662A priority patent/DE2418662A1/de
Priority to NL7405442A priority patent/NL7405442A/xx
Priority to IT21909/74A priority patent/IT1010097B/it
Priority to GB1788974A priority patent/GB1460758A/en
Priority to BE143618A priority patent/BE814192A/xx
Priority to US464574A priority patent/US3922467A/en
Priority to JP4671574A priority patent/JPS5314464B2/ja
Priority to AU68313/74A priority patent/AU6831374A/en
Publication of FR2227640A1 publication Critical patent/FR2227640A1/fr
Application granted granted Critical
Publication of FR2227640B1 publication Critical patent/FR2227640B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7315461A 1973-04-27 1973-04-27 Expired FR2227640B1 (en:Method)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR7315461A FR2227640B1 (en:Method) 1973-04-27 1973-04-27
DE2418662A DE2418662A1 (de) 1973-04-27 1974-04-18 Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate
NL7405442A NL7405442A (en:Method) 1973-04-27 1974-04-23
GB1788974A GB1460758A (en) 1973-04-27 1974-04-24 Vapour-phase 0position
IT21909/74A IT1010097B (it) 1973-04-27 1974-04-24 Metodo e dispositivo per deposi zione da fase vapore
BE143618A BE814192A (fr) 1973-04-27 1974-04-25 Werkwijze voor het vormen van een neerslag op een groot aantal vlakke substraten
US464574A US3922467A (en) 1973-04-27 1974-04-26 Vapour-phase deposition method
JP4671574A JPS5314464B2 (en:Method) 1973-04-27 1974-04-26
AU68313/74A AU6831374A (en) 1973-04-27 1974-04-26 Vapour-phase deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7315461A FR2227640B1 (en:Method) 1973-04-27 1973-04-27

Publications (2)

Publication Number Publication Date
FR2227640A1 FR2227640A1 (en:Method) 1974-11-22
FR2227640B1 true FR2227640B1 (en:Method) 1977-12-30

Family

ID=9118616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7315461A Expired FR2227640B1 (en:Method) 1973-04-27 1973-04-27

Country Status (9)

Country Link
US (1) US3922467A (en:Method)
JP (1) JPS5314464B2 (en:Method)
AU (1) AU6831374A (en:Method)
BE (1) BE814192A (en:Method)
DE (1) DE2418662A1 (en:Method)
FR (1) FR2227640B1 (en:Method)
GB (1) GB1460758A (en:Method)
IT (1) IT1010097B (en:Method)
NL (1) NL7405442A (en:Method)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
US4179326A (en) * 1976-04-22 1979-12-18 Fujitsu Limited Process for the vapor growth of a thin film
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
US4225647B1 (en) * 1977-12-02 1995-05-09 Richard A Parent Articles having thin, continuous, impervious coatings
US4220116A (en) * 1978-10-30 1980-09-02 Burroughs Corporation Reactant gas flow structure for a low pressure chemical vapor deposition system
NL7812388A (nl) * 1978-12-21 1980-06-24 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4355974A (en) * 1980-11-24 1982-10-26 Asq Boats, Inc. Wafer boat
KR830002904Y1 (ko) * 1982-06-16 1983-12-13 채이순 차수용(遵水用)매드
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
JPS6223983A (ja) * 1985-07-25 1987-01-31 Anelva Corp 真空化学反応装置
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
FR2604297B1 (fr) * 1986-09-19 1989-03-10 Pauleau Yves Reacteur de depot de silicium dope
JPS63162862U (en:Method) * 1988-03-16 1988-10-24
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
MY148924A (en) * 2001-09-29 2013-06-14 Cree Inc Apparatus for inverted multi-wafer mocvd fabrication
JP2012004408A (ja) * 2010-06-18 2012-01-05 Tokyo Electron Ltd 支持体構造及び処理装置
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers

Also Published As

Publication number Publication date
AU6831374A (en) 1975-10-30
IT1010097B (it) 1977-01-10
FR2227640A1 (en:Method) 1974-11-22
BE814192A (fr) 1974-10-25
US3922467A (en) 1975-11-25
JPS5016476A (en:Method) 1975-02-21
JPS5314464B2 (en:Method) 1978-05-17
GB1460758A (en) 1977-01-06
DE2418662A1 (de) 1974-11-21
NL7405442A (en:Method) 1974-10-29

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Legal Events

Date Code Title Description
ST Notification of lapse