FR2216678A1 - - Google Patents
Info
- Publication number
- FR2216678A1 FR2216678A1 FR7303748A FR7303748A FR2216678A1 FR 2216678 A1 FR2216678 A1 FR 2216678A1 FR 7303748 A FR7303748 A FR 7303748A FR 7303748 A FR7303748 A FR 7303748A FR 2216678 A1 FR2216678 A1 FR 2216678A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7303748A FR2216678B1 (nl) | 1973-02-02 | 1973-02-02 | |
NL7401100.A NL162249C (nl) | 1973-02-02 | 1974-01-26 | Halfgeleiderinrichting met halfgeleiderlichaam bevatten- de ten minste twee bipolaire transistors waarvan overeenkomstige zones van tegengesteld geleidingstype zijn. |
DE2403816A DE2403816C3 (de) | 1973-02-02 | 1974-01-26 | Halbleiteranordnung und Verfahren zu ihrer Herstellung |
GB398874A GB1450626A (en) | 1973-02-02 | 1974-01-29 | Semiconductor devices |
IT19978/74A IT1009603B (it) | 1973-02-02 | 1974-01-30 | Dispositivo semiconduttore e metodo di fabbricazione dello stesso |
US05/438,293 US3959039A (en) | 1973-02-02 | 1974-01-31 | Method of manufacturing vertical complementary bipolar transistors each with epitaxial base zones |
JP1228774A JPS5433837B2 (nl) | 1973-02-02 | 1974-01-31 | |
ES422816A ES422816A1 (es) | 1973-02-02 | 1974-01-31 | Dispositivo semiconductor. |
CA191,410A CA997870A (en) | 1973-02-02 | 1974-01-31 | Semiconductor device and method of manufacturing the device |
BR752/74A BR7400752D0 (pt) | 1973-02-02 | 1974-02-01 | Um dispositivo semicondutor e processo de fabricacao do dispositivo |
US05/821,997 US4122482A (en) | 1973-02-02 | 1977-08-05 | Vertical complementary bipolar transistor device with epitaxial base zones |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7303748A FR2216678B1 (nl) | 1973-02-02 | 1973-02-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2216678A1 true FR2216678A1 (nl) | 1974-08-30 |
FR2216678B1 FR2216678B1 (nl) | 1977-08-19 |
Family
ID=9114241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7303748A Expired FR2216678B1 (nl) | 1973-02-02 | 1973-02-02 |
Country Status (10)
Country | Link |
---|---|
US (1) | US3959039A (nl) |
JP (1) | JPS5433837B2 (nl) |
BR (1) | BR7400752D0 (nl) |
CA (1) | CA997870A (nl) |
DE (1) | DE2403816C3 (nl) |
ES (1) | ES422816A1 (nl) |
FR (1) | FR2216678B1 (nl) |
GB (1) | GB1450626A (nl) |
IT (1) | IT1009603B (nl) |
NL (1) | NL162249C (nl) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2600375A1 (de) * | 1975-01-10 | 1976-07-15 | Philips Nv | Komplementaere transistorstruktur und verfahren zu deren herstellung |
EP0002087A1 (fr) * | 1977-11-14 | 1979-05-30 | R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: | Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567473A (en) * | 1979-06-29 | 1981-01-26 | Mitsubishi Electric Corp | Semiconductor switching device |
JPS6081660U (ja) * | 1983-11-10 | 1985-06-06 | 富士電機株式会社 | ダ−リントントランジスタ |
GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
EP2555235B1 (en) * | 2011-08-02 | 2014-06-18 | Nxp B.V. | Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448776A (fr) * | 1964-11-19 | 1966-03-18 | Radiotechnique | Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328652A (en) * | 1964-07-20 | 1967-06-27 | Gen Electric | Voltage comparator |
GB1075387A (en) * | 1964-07-27 | 1967-07-12 | Gen Electric | Improvements in semicuoductor device making |
US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
US3411052A (en) * | 1965-10-28 | 1968-11-12 | Ncr Co | Logical circuit arrangement having a constant current gain for controlled operation i saturation |
US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
US3434022A (en) * | 1967-01-27 | 1969-03-18 | Motorola Inc | Semiconductor controlled rectifier device |
US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
-
1973
- 1973-02-02 FR FR7303748A patent/FR2216678B1/fr not_active Expired
-
1974
- 1974-01-26 DE DE2403816A patent/DE2403816C3/de not_active Expired
- 1974-01-26 NL NL7401100.A patent/NL162249C/nl not_active IP Right Cessation
- 1974-01-29 GB GB398874A patent/GB1450626A/en not_active Expired
- 1974-01-30 IT IT19978/74A patent/IT1009603B/it active
- 1974-01-31 CA CA191,410A patent/CA997870A/en not_active Expired
- 1974-01-31 JP JP1228774A patent/JPS5433837B2/ja not_active Expired
- 1974-01-31 ES ES422816A patent/ES422816A1/es not_active Expired
- 1974-01-31 US US05/438,293 patent/US3959039A/en not_active Expired - Lifetime
- 1974-02-01 BR BR752/74A patent/BR7400752D0/pt unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1448776A (fr) * | 1964-11-19 | 1966-03-18 | Radiotechnique | Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique |
Non-Patent Citations (2)
Title |
---|
REVUE FR 'L ELECTRICITE ELECTRONIQUE MODERNE', VOL. 42, DECEMBRE 1971. JANVIER 1972. * |
'TRANSISTORS DE PUISSANCE 'DARLINGTON' AU SILICIUM'. B. DABONCOURT, PAGES 22-24, PAGE 28.) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2600375A1 (de) * | 1975-01-10 | 1976-07-15 | Philips Nv | Komplementaere transistorstruktur und verfahren zu deren herstellung |
EP0002087A1 (fr) * | 1977-11-14 | 1979-05-30 | R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: | Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication |
FR2408914A1 (fr) * | 1977-11-14 | 1979-06-08 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
DE2403816A1 (de) | 1974-08-15 |
NL162249C (nl) | 1980-04-15 |
GB1450626A (en) | 1976-09-22 |
JPS5433837B2 (nl) | 1979-10-23 |
DE2403816C3 (de) | 1979-10-25 |
CA997870A (en) | 1976-09-28 |
IT1009603B (it) | 1976-12-20 |
NL162249B (nl) | 1979-11-15 |
US3959039A (en) | 1976-05-25 |
FR2216678B1 (nl) | 1977-08-19 |
NL7401100A (nl) | 1974-08-06 |
DE2403816B2 (de) | 1979-02-22 |
BR7400752D0 (pt) | 1974-11-05 |
JPS49107680A (nl) | 1974-10-12 |
ES422816A1 (es) | 1976-05-01 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |