FR1448776A - Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique - Google Patents

Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique

Info

Publication number
FR1448776A
FR1448776A FR995606A FR995606A FR1448776A FR 1448776 A FR1448776 A FR 1448776A FR 995606 A FR995606 A FR 995606A FR 995606 A FR995606 A FR 995606A FR 1448776 A FR1448776 A FR 1448776A
Authority
FR
France
Prior art keywords
single support
function elements
elements integral
several defined
semiconductor arrangements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR995606A
Other languages
English (en)
Inventor
Michel Brunet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique SA
Original Assignee
Radiotechnique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique SA filed Critical Radiotechnique SA
Priority to FR995606A priority Critical patent/FR1448776A/fr
Priority to CH1569965A priority patent/CH440461A/de
Priority to NL6514836A priority patent/NL6514836A/xx
Priority to GB4862265A priority patent/GB1121495A/en
Priority to DE19651514284 priority patent/DE1514284A1/de
Application granted granted Critical
Publication of FR1448776A publication Critical patent/FR1448776A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
FR995606A 1964-11-19 1964-11-19 Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique Expired FR1448776A (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR995606A FR1448776A (fr) 1964-11-19 1964-11-19 Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique
CH1569965A CH440461A (de) 1964-11-19 1965-11-15 Halbleiter-Schaltungsanordnung
NL6514836A NL6514836A (fr) 1964-11-19 1965-11-16
GB4862265A GB1121495A (en) 1964-11-19 1965-11-16 Semiconductor device
DE19651514284 DE1514284A1 (de) 1964-11-19 1965-11-17 Aus Halbleiter-Schaltelementen bestehendes Gebilde

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR995606A FR1448776A (fr) 1964-11-19 1964-11-19 Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique

Publications (1)

Publication Number Publication Date
FR1448776A true FR1448776A (fr) 1966-03-18

Family

ID=8842917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR995606A Expired FR1448776A (fr) 1964-11-19 1964-11-19 Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique

Country Status (5)

Country Link
CH (1) CH440461A (fr)
DE (1) DE1514284A1 (fr)
FR (1) FR1448776A (fr)
GB (1) GB1121495A (fr)
NL (1) NL6514836A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2216678A1 (fr) * 1973-02-02 1974-08-30 Radiotechnique Compelec
DE10328008A1 (de) * 2003-06-21 2005-02-03 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pnp- und npn-Bipolartransistoren sowie Herstellungsverfahren

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2216678A1 (fr) * 1973-02-02 1974-08-30 Radiotechnique Compelec
DE10328008A1 (de) * 2003-06-21 2005-02-03 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pnp- und npn-Bipolartransistoren sowie Herstellungsverfahren
US7038255B2 (en) 2003-06-21 2006-05-02 Infineon Technologies Ag Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method
DE10328008B4 (de) * 2003-06-21 2008-04-03 Infineon Technologies Ag Integrierte Schaltungsanordnung mit pnp- und npn-Bipolartransistoren sowie Herstellungsverfahren

Also Published As

Publication number Publication date
DE1514284A1 (de) 1969-08-14
GB1121495A (en) 1968-07-31
CH440461A (de) 1967-07-31
NL6514836A (fr) 1966-05-20

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