FR2213589B1 - - Google Patents

Info

Publication number
FR2213589B1
FR2213589B1 FR7346081A FR7346081A FR2213589B1 FR 2213589 B1 FR2213589 B1 FR 2213589B1 FR 7346081 A FR7346081 A FR 7346081A FR 7346081 A FR7346081 A FR 7346081A FR 2213589 B1 FR2213589 B1 FR 2213589B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7346081A
Other languages
French (fr)
Other versions
FR2213589A1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2213589A1 publication Critical patent/FR2213589A1/fr
Application granted granted Critical
Publication of FR2213589B1 publication Critical patent/FR2213589B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR7346081A 1973-01-08 1973-12-21 Expired FR2213589B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732300754 DE2300754A1 (de) 1973-01-08 1973-01-08 Thyristor

Publications (2)

Publication Number Publication Date
FR2213589A1 FR2213589A1 (de) 1974-08-02
FR2213589B1 true FR2213589B1 (de) 1979-04-20

Family

ID=5868522

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7346081A Expired FR2213589B1 (de) 1973-01-08 1973-12-21

Country Status (8)

Country Link
JP (1) JPS5725984B2 (de)
CH (1) CH566081A5 (de)
DE (1) DE2300754A1 (de)
FR (1) FR2213589B1 (de)
GB (1) GB1417953A (de)
IT (1) IT1006717B (de)
NL (1) NL7400189A (de)
SE (1) SE405527B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
JPS5660058A (en) * 1979-10-22 1981-05-23 Toshiba Corp Semiconductor device
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
EP0320738A3 (de) * 1987-12-17 1991-02-06 Siemens Aktiengesellschaft Überkopfzündfester Thyristor
EP0343369A1 (de) * 1988-05-19 1989-11-29 Siemens Aktiengesellschaft Verfahren zum Herstellen eines Thyristors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil

Also Published As

Publication number Publication date
FR2213589A1 (de) 1974-08-02
GB1417953A (en) 1975-12-17
IT1006717B (it) 1976-10-20
JPS49104580A (de) 1974-10-03
JPS5725984B2 (de) 1982-06-02
SE405527B (sv) 1978-12-11
CH566081A5 (de) 1975-08-29
DE2300754A1 (de) 1974-07-11
NL7400189A (de) 1974-07-10

Similar Documents

Publication Publication Date Title
AU476761B2 (de)
AU465372B2 (de)
AU474593B2 (de)
AU474511B2 (de)
AU474838B2 (de)
AU471343B2 (de)
AU465453B2 (de)
AU465434B2 (de)
AU476714B2 (de)
FR2213589B1 (de)
AU466283B2 (de)
AU472848B2 (de)
AU476696B2 (de)
AU477823B2 (de)
AU476873B1 (de)
AU477824B2 (de)
AU461342B2 (de)
AU471461B2 (de)
AR200256A1 (de)
AR197627A1 (de)
AU479419A (de)
AU479420A (de)
CH566478A5 (de)
CH566728A5 (de)
CH568118A5 (de)

Legal Events

Date Code Title Description
ST Notification of lapse