FR2212646B1 - - Google Patents

Info

Publication number
FR2212646B1
FR2212646B1 FR7345370A FR7345370A FR2212646B1 FR 2212646 B1 FR2212646 B1 FR 2212646B1 FR 7345370 A FR7345370 A FR 7345370A FR 7345370 A FR7345370 A FR 7345370A FR 2212646 B1 FR2212646 B1 FR 2212646B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7345370A
Other languages
French (fr)
Other versions
FR2212646A1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2212646A1 publication Critical patent/FR2212646A1/fr
Application granted granted Critical
Publication of FR2212646B1 publication Critical patent/FR2212646B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature
FR7345370A 1973-01-02 1973-12-11 Expired FR2212646B1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00320394A US3841926A (en) 1973-01-02 1973-01-02 Integrated circuit fabrication process

Publications (2)

Publication Number Publication Date
FR2212646A1 FR2212646A1 (https=) 1974-07-26
FR2212646B1 true FR2212646B1 (https=) 1977-09-09

Family

ID=23246218

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7345370A Expired FR2212646B1 (https=) 1973-01-02 1973-12-11

Country Status (6)

Country Link
US (1) US3841926A (https=)
JP (1) JPS5128990B2 (https=)
CA (1) CA997482A (https=)
FR (1) FR2212646B1 (https=)
GB (1) GB1444386A (https=)
SE (1) SE388073B (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027321A (en) * 1973-05-03 1977-05-31 Ibm Corporation Reliable MOSFET device and method for making same
JPS5534582B2 (https=) * 1974-06-24 1980-09-08
US3967988A (en) * 1974-08-05 1976-07-06 Motorola, Inc. Diffusion guarded metal-oxide-silicon field effect transistors
US3975220A (en) * 1975-09-05 1976-08-17 International Business Machines Corporation Diffusion control for controlling parasitic capacitor effects in single FET structure arrays
US4051273A (en) * 1975-11-26 1977-09-27 Ibm Corporation Field effect transistor structure and method of making same
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
US4506437A (en) * 1978-05-26 1985-03-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4455737A (en) * 1978-05-26 1984-06-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
US4319260A (en) * 1979-09-05 1982-03-09 Texas Instruments Incorporated Multilevel interconnect system for high density silicon gate field effect transistors
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
US4301519A (en) * 1980-05-02 1981-11-17 International Business Machines Corporation Sensing technique for memories with small cells
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPS5884455A (ja) * 1981-11-13 1983-05-20 Fujitsu Ltd 半導体記憶装置
US4445201A (en) * 1981-11-30 1984-04-24 International Business Machines Corporation Simple amplifying system for a dense memory array
DE3277343D1 (en) * 1982-06-14 1987-10-22 Ibm Deutschland Method of adjusting the edge angle in polysilicon
US4609429A (en) * 1984-07-02 1986-09-02 International Business Machines Corporation Process for making a small dynamic memory cell structure
US4612563A (en) * 1984-07-30 1986-09-16 Sprague Electric Company High voltage integrated circuit
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
US4675982A (en) * 1985-10-31 1987-06-30 International Business Machines Corporation Method of making self-aligned recessed oxide isolation regions
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
USRE33972E (en) * 1986-07-15 1992-06-23 International Business Machines Corporation Two square memory cells
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells
JPS6344759A (ja) * 1986-08-12 1988-02-25 Canon Inc 光電変換装置
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置
US6069393A (en) * 1987-06-26 2000-05-30 Canon Kabushiki Kaisha Photoelectric converter
JPH0744226B2 (ja) * 1988-01-21 1995-05-15 富士通株式会社 半導体装置及びその製造方法
US5001525A (en) * 1989-03-27 1991-03-19 International Business Machines Corporation Two square memory cells having highly conductive word lines
US5225134A (en) 1991-02-08 1993-07-06 Concrete Design Specialties, Inc. Methods of forming contoured walls
KR100594277B1 (ko) * 2004-05-25 2006-06-30 삼성전자주식회사 포토 다이오드 및 그 제조방법
AU2010226940C1 (en) * 2010-10-02 2011-07-14 Bui, Dac Thong Mr Auto switch MOS-FET

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297601A (https=) * 1962-09-07 Rca Corp
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
US3602782A (en) * 1969-12-05 1971-08-31 Thomas Klein Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse

Also Published As

Publication number Publication date
JPS49126283A (https=) 1974-12-03
FR2212646A1 (https=) 1974-07-26
GB1444386A (en) 1976-07-28
US3841926A (en) 1974-10-15
CA997482A (en) 1976-09-21
SE388073B (sv) 1976-09-20
JPS5128990B2 (https=) 1976-08-23

Similar Documents

Publication Publication Date Title
AR201758A1 (https=)
AU476761B2 (https=)
AU465372B2 (https=)
AR201235Q (https=)
AR201231Q (https=)
AU474593B2 (https=)
AU474511B2 (https=)
AU474838B2 (https=)
AU465453B2 (https=)
AU471343B2 (https=)
AU465434B2 (https=)
AU450229B2 (https=)
AU476714B2 (https=)
AR201229Q (https=)
AU466283B2 (https=)
AR199451A1 (https=)
AU476696B2 (https=)
AU472848B2 (https=)
AU477823B2 (https=)
AR197627A1 (https=)
AR196382A1 (https=)
AR200256A1 (https=)
AU461342B2 (https=)
AR210729A1 (https=)
AR193950A1 (https=)

Legal Events

Date Code Title Description
ST Notification of lapse