FR2210073A1 - Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation - Google Patents

Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Info

Publication number
FR2210073A1
FR2210073A1 FR7244323A FR7244323A FR2210073A1 FR 2210073 A1 FR2210073 A1 FR 2210073A1 FR 7244323 A FR7244323 A FR 7244323A FR 7244323 A FR7244323 A FR 7244323A FR 2210073 A1 FR2210073 A1 FR 2210073A1
Authority
FR
France
Prior art keywords
light source
sic
semiconductor light
doped
acceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7244323A
Other languages
English (en)
French (fr)
Other versions
FR2210073B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MASLAKOVETS JURY
Original Assignee
MASLAKOVETS JURY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MASLAKOVETS JURY filed Critical MASLAKOVETS JURY
Priority to FR7244323A priority Critical patent/FR2210073A1/fr
Publication of FR2210073A1 publication Critical patent/FR2210073A1/fr
Application granted granted Critical
Publication of FR2210073B1 publication Critical patent/FR2210073B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants

Landscapes

  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
FR7244323A 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation Granted FR2210073A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7244323A FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7244323A FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Publications (2)

Publication Number Publication Date
FR2210073A1 true FR2210073A1 (en) 1974-07-05
FR2210073B1 FR2210073B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-08-20

Family

ID=9108616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7244323A Granted FR2210073A1 (en) 1972-12-13 1972-12-13 Semiconductor light source - with near linear luminance/current relationship, suitable for low temp operation

Country Status (1)

Country Link
FR (1) FR2210073A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
FR1602599A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-10-10 1970-12-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
FR1602599A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1968-10-10 1970-12-28

Also Published As

Publication number Publication date
FR2210073B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-08-20

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Legal Events

Date Code Title Description
ST Notification of lapse