FR2200631A1 - - Google Patents

Info

Publication number
FR2200631A1
FR2200631A1 FR7334367A FR7334367A FR2200631A1 FR 2200631 A1 FR2200631 A1 FR 2200631A1 FR 7334367 A FR7334367 A FR 7334367A FR 7334367 A FR7334367 A FR 7334367A FR 2200631 A1 FR2200631 A1 FR 2200631A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7334367A
Other languages
French (fr)
Other versions
FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2200631A1 publication Critical patent/FR2200631A1/fr
Application granted granted Critical
Publication of FR2200631B1 publication Critical patent/FR2200631B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7334367A 1972-09-25 1973-09-25 Expired FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4429572A GB1437328A (en) 1972-09-25 1972-09-25 Sensors having recycling means

Publications (2)

Publication Number Publication Date
FR2200631A1 true FR2200631A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-04-19
FR2200631B1 FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-02-10

Family

ID=10432634

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7334367A Expired FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-09-25 1973-09-25

Country Status (6)

Country Link
US (1) US3856989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4988417A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA984056A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1437328A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7313120A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US4047187A (en) * 1974-04-01 1977-09-06 Canon Kabushiki Kaisha System for exposure measurement and/or focus detection by means of image senser
FR2288373A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Dispositif image a transfert de charges
US4009380A (en) * 1975-01-20 1977-02-22 The United States Of America As Represented By The Secretary Of The Navy Electro-optical system for performing matrix-vector multiplication
US3963942A (en) * 1975-03-06 1976-06-15 Bell Telephone Laboratories, Incorporated Semiconductor charge transfer devices with dark current background cancellation
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
JPS5217771A (en) * 1975-07-31 1977-02-09 Sony Corp Charge transfer device
JPS5233416A (en) * 1975-09-09 1977-03-14 Matsushita Electric Ind Co Ltd Image pickup device
US4010319A (en) * 1975-11-20 1977-03-01 Rca Corporation Smear reduction in ccd imagers
US4011442A (en) * 1975-12-22 1977-03-08 General Electric Company Apparatus for sensing optical signals
US4011441A (en) * 1975-12-22 1977-03-08 General Electric Company Solid state imaging apparatus
US4045816A (en) * 1976-02-12 1977-08-30 Recognition Equipment Incorporated Automatic corrector for fixed pattern odd/even video noise
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
US4301471A (en) * 1976-12-20 1981-11-17 Hughes Aircraft Company Moving target indicator system utilizing charge coupled device
JPS53125791A (en) * 1977-04-08 1978-11-02 Toshiba Corp Solidstate pick up unit
JPS583630B2 (ja) * 1977-09-16 1983-01-22 松下電子工業株式会社 固体光像検出装置
JPS54114922A (en) * 1978-02-27 1979-09-07 Nec Corp Two dimentional pick up element and its drive
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
US4263623A (en) * 1979-04-02 1981-04-21 Eastman Kodak Company Slow-frame video camera/recorder and image-sensing and signal processing device for use therewith
US4219845A (en) * 1979-04-12 1980-08-26 The United States Of America As Represented By The Secretary Of The Air Force Sense and inject moving target indicator apparatus
JPS568968A (en) * 1979-07-05 1981-01-29 Matsushita Electric Ind Co Ltd Solid-state image pickup unit
US4278999A (en) * 1979-09-12 1981-07-14 The Mead Corporation Moving image scanner
DE2939490A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe
US4368467A (en) * 1980-02-29 1983-01-11 Fujitsu Limited Display device
US4307423A (en) * 1980-04-17 1981-12-22 The United States Of America As Represented By The Secretary Of The Navy Temperature stabilization circuit for charge coupled photodiode array
JPS5750178A (en) * 1980-09-10 1982-03-24 Canon Inc Photoelectric converter
GB2090100B (en) * 1980-12-22 1985-09-11 Burroughs Corp Electro-optical imaging system
US4488163A (en) * 1981-01-19 1984-12-11 Westinghouse Electric Corp. Highly isolated photodetectors
JPS58500267A (ja) * 1981-03-10 1983-02-17 ア−ルシ−エ−　コ−ポレ−シヨン 撮像器用誤差補正装置
US4481539A (en) * 1981-03-10 1984-11-06 Rca Corporation Error correction arrangement for imagers
US4553167A (en) * 1981-08-08 1985-11-12 Canon Kabushiki Kaisha Image signal processing device
US4433343A (en) * 1981-12-22 1984-02-21 Levine Michael A Extrinsic infrared detector with dopant site charge-neutralization
FR2520910B1 (fr) * 1982-02-04 1987-07-10 Victor Company Of Japan Dispositif a memoire video
JPS58134581A (ja) * 1982-02-04 1983-08-10 Victor Co Of Japan Ltd 固体撮像装置
JPS5916472A (ja) * 1982-07-19 1984-01-27 Sharp Corp 固体撮像装置
JPS5934772A (ja) * 1982-08-20 1984-02-25 Olympus Optical Co Ltd 画像信号処理装置
DE3372249D1 (en) * 1983-03-30 1987-07-30 Ibm Deutschland Crosstalk compensation circuit for electro-optical scanning devices
JPH0666914B2 (ja) * 1984-01-10 1994-08-24 シャープ株式会社 固体撮像装置
JPH0834564B2 (ja) * 1984-05-23 1996-03-29 株式会社日立製作所 固体撮像装置およびその駆動方法
US4866497A (en) * 1984-06-01 1989-09-12 General Electric Company Infra-red charge-coupled device image sensor
NL8403113A (nl) * 1984-10-12 1986-05-01 Philips Nv Ladingsgekoppelde inrichting.
US4656520A (en) * 1985-07-16 1987-04-07 Rca Corporation Frame-transfer CCD imager with recirculating frame storage register
US4736261A (en) * 1985-08-12 1988-04-05 Eastman Kodak Company Full frame recirculating imaging device having a field sequential output
US4703442A (en) * 1985-09-25 1987-10-27 Rca Corporation Temperature tracking defect corrector for a solid-state imager
US4739495A (en) * 1985-09-25 1988-04-19 Rca Corporation Solid-state imager defect corrector
US4779137A (en) * 1986-04-23 1988-10-18 Canon Kabushiki Kaisha Image pickup apparatus
EP0272152B1 (en) * 1986-12-18 1994-08-03 Canon Kabushiki Kaisha Signal reading out circuit
JPH0748826B2 (ja) * 1988-12-01 1995-05-24 三菱電機株式会社 固体撮像装置
JPH02219270A (ja) * 1989-02-20 1990-08-31 Nec Corp 固体撮像装置
US5825840A (en) * 1996-04-23 1998-10-20 Eastman Kodak Company Interline sensor employing photocapacitor gate
US6459077B1 (en) * 1998-09-15 2002-10-01 Dalsa, Inc. Bucket brigade TDI photodiode sensor
US6740879B1 (en) * 2002-05-07 2004-05-25 Raytheon Company Method and apparatus for automated detection and indication of movement
US7851798B2 (en) * 2005-05-04 2010-12-14 Micron Technology, Inc. Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel
KR101471157B1 (ko) * 2008-06-02 2014-12-10 삼성디스플레이 주식회사 발광블럭 구동방법, 이를 수행하기 위한 백라이트 어셈블리및 이를 갖는 표시장치
JP5760406B2 (ja) * 2010-11-29 2015-08-12 セイコーエプソン株式会社 検出回路、センサーデバイス及び電子機器
CN105424095B (zh) * 2016-01-04 2017-07-28 东南大学 二维阻性传感器阵列的快速读出电路及其读出方法
CN105606133B (zh) * 2016-01-28 2017-10-31 东南大学 阻性传感器阵列测试电路及其测试方法、传感系统
CN105628061B (zh) * 2016-01-28 2017-10-31 东南大学 阻性传感器阵列快速读出电路及其读出方法、传感系统
CN106500736B (zh) * 2016-09-26 2019-02-05 东南大学 一种二维阻性传感阵列的线性读出电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3555180A (en) * 1967-02-17 1971-01-12 Servo Corp Of America Semiconductor detector and scanning device
SE336682B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-10-29 1971-07-12 Bofors Ab

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARTICLE "CCD AND PHOTOSENSITIVE DEVICES" PAGE 132) *
PUBLICATION US "SOLID-STATE CIRCUITS CONFERENCE" 1973 IEEE INTERNATIONAL: DIGEST OF TECHNICAL PAPERS FEVRIER 1973, EDITEUR: LEWIS WINNER, NEW YORK *

Also Published As

Publication number Publication date
DE2348242A1 (de) 1974-03-28
JPS4988417A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-08-23
NL7313120A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-03-27
FR2200631B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-02-10
US3856989A (en) 1974-12-24
CA984056A (en) 1976-02-17
DE2348242B2 (de) 1975-08-14
GB1437328A (en) 1976-05-26

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Legal Events

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ST Notification of lapse