FR2197237A1 - Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other - Google Patents

Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other

Info

Publication number
FR2197237A1
FR2197237A1 FR7229954A FR7229954A FR2197237A1 FR 2197237 A1 FR2197237 A1 FR 2197237A1 FR 7229954 A FR7229954 A FR 7229954A FR 7229954 A FR7229954 A FR 7229954A FR 2197237 A1 FR2197237 A1 FR 2197237A1
Authority
FR
France
Prior art keywords
compsn
semiconductor
deposited
gradually changing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7229954A
Other languages
English (en)
French (fr)
Other versions
FR2197237B1 (cs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7229954A priority Critical patent/FR2197237A1/fr
Publication of FR2197237A1 publication Critical patent/FR2197237A1/fr
Application granted granted Critical
Publication of FR2197237B1 publication Critical patent/FR2197237B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
FR7229954A 1972-08-22 1972-08-22 Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other Granted FR2197237A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7229954A FR2197237A1 (en) 1972-08-22 1972-08-22 Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7229954A FR2197237A1 (en) 1972-08-22 1972-08-22 Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other

Publications (2)

Publication Number Publication Date
FR2197237A1 true FR2197237A1 (en) 1974-03-22
FR2197237B1 FR2197237B1 (cs) 1978-02-10

Family

ID=9103436

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7229954A Granted FR2197237A1 (en) 1972-08-22 1972-08-22 Semiconductor with two layers of different compsns - formed by gradually changing compsn deposited from one to the other

Country Status (1)

Country Link
FR (1) FR2197237A1 (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386145A1 (fr) * 1977-04-01 1978-10-27 Charmakadze Revaz Dispositif electroluminescent a semi-conducteurs

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
*REVUE US "BULLETIN OF THE AMERICAN PHYSICAL SOCIETY", SERIES II, VOL. 17, NO. 3, MARS 1972, ABSTRACT AC4 "HETEROEPITAXIAL THERMAL GRADIENT SOLUTION GROWTH OF GAN" R.A. LOGAN ET C.D. THURMOND *
PAGE 233) *
REVUE US "JOURNAL OF APPLIED PHYSICS", VOL. 43, JANVIER 1972, NO. 1, "TWO-STAGE EPITAXIAL GROWTH OF GAAS E1 DIODES ON SPINEL" I.LADANY ET C.C.WANG, PAGES 236-238 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386145A1 (fr) * 1977-04-01 1978-10-27 Charmakadze Revaz Dispositif electroluminescent a semi-conducteurs

Also Published As

Publication number Publication date
FR2197237B1 (cs) 1978-02-10

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Legal Events

Date Code Title Description
ST Notification of lapse