FR2191270A1 - - Google Patents

Info

Publication number
FR2191270A1
FR2191270A1 FR7321783A FR7321783A FR2191270A1 FR 2191270 A1 FR2191270 A1 FR 2191270A1 FR 7321783 A FR7321783 A FR 7321783A FR 7321783 A FR7321783 A FR 7321783A FR 2191270 A1 FR2191270 A1 FR 2191270A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7321783A
Other languages
French (fr)
Other versions
FR2191270B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2191270A1 publication Critical patent/FR2191270A1/fr
Application granted granted Critical
Publication of FR2191270B1 publication Critical patent/FR2191270B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR7321783A 1972-06-30 1973-06-06 Expired FR2191270B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26777172A 1972-06-30 1972-06-30

Publications (2)

Publication Number Publication Date
FR2191270A1 true FR2191270A1 (enrdf_load_stackoverflow) 1974-02-01
FR2191270B1 FR2191270B1 (enrdf_load_stackoverflow) 1977-07-29

Family

ID=23020055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7321783A Expired FR2191270B1 (enrdf_load_stackoverflow) 1972-06-30 1973-06-06

Country Status (6)

Country Link
JP (1) JPS528229B2 (enrdf_load_stackoverflow)
CA (1) CA1005925A (enrdf_load_stackoverflow)
DE (1) DE2318912A1 (enrdf_load_stackoverflow)
FR (1) FR2191270B1 (enrdf_load_stackoverflow)
GB (1) GB1422586A (enrdf_load_stackoverflow)
IT (1) IT987426B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390009A1 (enrdf_load_stackoverflow) * 1977-05-06 1978-12-01 Siemens Ag
EP0082256A3 (en) * 1981-12-10 1986-05-07 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising dielectric isolation regions
EP0078890A3 (en) * 1981-11-06 1986-05-07 Rockwell International Corporation Method of fabrication of dielectrically isolated cmos device with an isolated slot

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2554450A1 (de) * 1975-12-03 1977-06-16 Siemens Ag Verfahren zur herstellung einer integrierten schaltung
JPS58212165A (ja) * 1983-05-23 1983-12-09 Nec Corp 半導体装置
JPH0616549B2 (ja) * 1984-04-17 1994-03-02 三菱電機株式会社 半導体集積回路装置
JP2003124514A (ja) * 2001-10-17 2003-04-25 Sony Corp 半導体発光素子及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1549386A (enrdf_load_stackoverflow) * 1966-10-05 1968-12-13
FR2079612A5 (enrdf_load_stackoverflow) * 1970-02-06 1971-11-12 Radiotechnique Compelec
FR2080769A1 (enrdf_load_stackoverflow) * 1970-02-26 1971-11-19 North American Rockwell
NL7116712A (enrdf_load_stackoverflow) * 1970-12-21 1972-06-23
FR2134468A1 (enrdf_load_stackoverflow) * 1971-04-30 1972-12-08 Standard Microsystems

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1549386A (enrdf_load_stackoverflow) * 1966-10-05 1968-12-13
FR2079612A5 (enrdf_load_stackoverflow) * 1970-02-06 1971-11-12 Radiotechnique Compelec
FR2080769A1 (enrdf_load_stackoverflow) * 1970-02-26 1971-11-19 North American Rockwell
NL7116712A (enrdf_load_stackoverflow) * 1970-12-21 1972-06-23
FR2134468A1 (enrdf_load_stackoverflow) * 1971-04-30 1972-12-08 Standard Microsystems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390009A1 (enrdf_load_stackoverflow) * 1977-05-06 1978-12-01 Siemens Ag
EP0078890A3 (en) * 1981-11-06 1986-05-07 Rockwell International Corporation Method of fabrication of dielectrically isolated cmos device with an isolated slot
EP0082256A3 (en) * 1981-12-10 1986-05-07 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising dielectric isolation regions

Also Published As

Publication number Publication date
IT987426B (it) 1975-02-20
JPS4945688A (enrdf_load_stackoverflow) 1974-05-01
DE2318912A1 (de) 1974-01-17
FR2191270B1 (enrdf_load_stackoverflow) 1977-07-29
GB1422586A (en) 1976-01-28
CA1005925A (en) 1977-02-22
JPS528229B2 (enrdf_load_stackoverflow) 1977-03-08

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Legal Events

Date Code Title Description
ST Notification of lapse