JPS5236043B2
(en)
*
|
1974-02-21 |
1977-09-13 |
|
|
JPS5241050B2
(en)
*
|
1974-03-27 |
1977-10-15 |
|
|
JPS51120712A
(en)
*
|
1975-04-15 |
1976-10-22 |
Toshiba Corp |
Positive type photo-resistant compound
|
JPS522519A
(en)
*
|
1975-06-24 |
1977-01-10 |
Toshiba Corp |
Positive photosensitive composite material
|
US4009033A
(en)
*
|
1975-09-22 |
1977-02-22 |
International Business Machines Corporation |
High speed positive photoresist composition
|
JPS549619A
(en)
*
|
1977-06-23 |
1979-01-24 |
Oji Paper Co |
Photosensitive composition
|
US4259434A
(en)
*
|
1977-10-24 |
1981-03-31 |
Fuji Photo Film Co., Ltd. |
Method for developing positive acting light-sensitive planographic printing plate
|
JPS5498614A
(en)
*
|
1978-01-09 |
1979-08-03 |
Konishiroku Photo Ind Co Ltd |
Photosensitive composition
|
DE2855393A1
(en)
*
|
1978-12-21 |
1980-07-03 |
Hoechst Ag |
METHOD FOR PRODUCING FLAT PRINTING FORMS
|
GB2052084B
(en)
*
|
1979-06-13 |
1983-04-20 |
Fuji Photo Film Co Ltd |
Process for preparing photosensitive lithographic printing plate precursor
|
JPS5672991A
(en)
*
|
1979-11-19 |
1981-06-17 |
Mita Ind Co Ltd |
Color former for coloring substance of leucoline and recording material made by use thereof
|
JPS56162744A
(en)
*
|
1980-05-19 |
1981-12-14 |
Hitachi Ltd |
Formation of fine pattern
|
JPS5730829A
(en)
*
|
1980-08-01 |
1982-02-19 |
Hitachi Ltd |
Micropattern formation method
|
JPS5852638A
(en)
*
|
1981-09-24 |
1983-03-28 |
Hitachi Ltd |
Radiation sensitive composition
|
JPS5872139A
(en)
*
|
1981-10-26 |
1983-04-30 |
Tokyo Ohka Kogyo Co Ltd |
Photosensitive material
|
US4554237A
(en)
*
|
1981-12-25 |
1985-11-19 |
Hitach, Ltd. |
Photosensitive resin composition and method for forming fine patterns with said composition
|
US4439516A
(en)
*
|
1982-03-15 |
1984-03-27 |
Shipley Company Inc. |
High temperature positive diazo photoresist processing using polyvinyl phenol
|
JPS58203433A
(en)
*
|
1982-05-21 |
1983-11-26 |
Fuji Photo Film Co Ltd |
Photosensitive composition
|
JPS58205147A
(en)
*
|
1982-05-25 |
1983-11-30 |
Sumitomo Chem Co Ltd |
Positive type photoresist composition
|
DE3415033C2
(en)
*
|
1983-04-20 |
1986-04-03 |
Hitachi Chemical Co., Ltd. |
4'-Azidobenzal-2-methoxyacetophenone, process for its preparation and photosensitive composition containing it
|
DE3417607A1
(en)
*
|
1983-05-12 |
1984-11-15 |
Hitachi Chemical Co., Ltd. |
METHOD FOR PRODUCING FINE PATTERNS
|
EP0135900A3
(en)
*
|
1983-09-16 |
1986-06-11 |
Olin Hunt Specialty Products, Inc. |
Aqueous developable negative resist compositions
|
US4551409A
(en)
*
|
1983-11-07 |
1985-11-05 |
Shipley Company Inc. |
Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
|
US4569897A
(en)
*
|
1984-01-16 |
1986-02-11 |
Rohm And Haas Company |
Negative photoresist compositions with polyglutarimide polymer
|
US4631249A
(en)
*
|
1984-01-16 |
1986-12-23 |
Rohm & Haas Company |
Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
|
DE3406927A1
(en)
*
|
1984-02-25 |
1985-08-29 |
Hoechst Ag, 6230 Frankfurt |
RADIATION-SENSITIVE MIXTURE BASED ON ACID-CLEARABLE COMPOUNDS
|
JPS60220931A
(en)
*
|
1984-03-06 |
1985-11-05 |
Tokyo Ohka Kogyo Co Ltd |
Base material for photosensitive resin
|
DK241885A
(en)
*
|
1984-06-01 |
1985-12-02 |
Rohm & Haas |
PHOTOSENSIBLE COATING COMPOSITIONS, THERMALLY STABLE COATINGS MADE THEREOF AND APPLICATION OF SUCH COATINGS FOR THE formation of THERMALLY STABLE POLYMER PICTURES
|
DE3421448A1
(en)
*
|
1984-06-08 |
1985-12-12 |
Hoechst Ag, 6230 Frankfurt |
POLYMERS HAVING PERFLUORALKYL GROUPS, REPRODUCTION LAYERS CONTAINING THEM AND THE USE THEREOF FOR WATERLESS OFFSET PRINTING
|
JPS6161154A
(en)
*
|
1984-09-03 |
1986-03-28 |
Oki Electric Ind Co Ltd |
Negative type resist composition and formation of fine resist pattern using said composition
|
DE3445276A1
(en)
*
|
1984-12-12 |
1986-06-19 |
Hoechst Ag, 6230 Frankfurt |
RADIATION-SENSITIVE MIXTURE, LIGHT-SENSITIVE RECORDING MATERIAL MADE THEREOF AND METHOD FOR PRODUCING A FLAT PRINTING FORM
|
US4600683A
(en)
*
|
1985-04-22 |
1986-07-15 |
International Business Machines Corp. |
Cross-linked polyalkenyl phenol based photoresist compositions
|
JPH0766184B2
(en)
*
|
1985-06-04 |
1995-07-19 |
住友化学工業株式会社 |
Positive photoresist composition
|
US5238774A
(en)
*
|
1985-08-07 |
1993-08-24 |
Japan Synthetic Rubber Co., Ltd. |
Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
|
JPS62123444A
(en)
|
1985-08-07 |
1987-06-04 |
Japan Synthetic Rubber Co Ltd |
Radiation sensitive resinous composition
|
US5215857A
(en)
*
|
1985-08-07 |
1993-06-01 |
Japan Synthetic Rubber Co., Ltd. |
1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
|
DE3662952D1
(en)
*
|
1985-08-12 |
1989-05-24 |
Hoechst Celanese Corp |
Process for obtaining negative images from positive photoresists
|
US4931381A
(en)
*
|
1985-08-12 |
1990-06-05 |
Hoechst Celanese Corporation |
Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
DE3528929A1
(en)
*
|
1985-08-13 |
1987-02-26 |
Hoechst Ag |
RADIATION-SENSITIVE MIXTURE, THIS CONTAINING RADIATION-SENSITIVE RECORDING MATERIAL AND METHOD FOR THE PRODUCTION OF RELIEF IMAGES
|
DE3528930A1
(en)
*
|
1985-08-13 |
1987-02-26 |
Hoechst Ag |
POLYMERIC COMPOUNDS AND RADIO-SENSITIVE MIXTURE CONTAINING THEM
|
US4758497A
(en)
*
|
1985-08-22 |
1988-07-19 |
Polychrome Corporation |
Photosensitive naphthoquinone diazide sulfonyl ester compounds for the fabrication of lithographic plates and photosensitive sheet construction with the compounds
|
US5039594A
(en)
*
|
1985-10-28 |
1991-08-13 |
Hoechst Celanese Corporation |
Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
|
US4948697A
(en)
*
|
1985-10-28 |
1990-08-14 |
Hoechst Celanese Corporation |
Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
US4806458A
(en)
*
|
1985-10-28 |
1989-02-21 |
Hoechst Celanese Corporation |
Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
|
US4692398A
(en)
*
|
1985-10-28 |
1987-09-08 |
American Hoechst Corporation |
Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
US4983490A
(en)
*
|
1985-10-28 |
1991-01-08 |
Hoechst Celanese Corporation |
Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
|
JPS62102241A
(en)
*
|
1985-10-30 |
1987-05-12 |
Tokyo Ohka Kogyo Co Ltd |
Photosensitive composition
|
EP0224680B1
(en)
*
|
1985-12-05 |
1992-01-15 |
International Business Machines Corporation |
Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
|
US4942108A
(en)
*
|
1985-12-05 |
1990-07-17 |
International Business Machines Corporation |
Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
|
US4980264A
(en)
*
|
1985-12-17 |
1990-12-25 |
International Business Machines Corporation |
Photoresist compositions of controlled dissolution rate in alkaline developers
|
US4822716A
(en)
*
|
1985-12-27 |
1989-04-18 |
Kabushiki Kaisha Toshiba |
Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
|
US4720445A
(en)
*
|
1986-02-18 |
1988-01-19 |
Allied Corporation |
Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
|
JPS62227143A
(en)
*
|
1986-03-28 |
1987-10-06 |
Toshiba Corp |
Photosensitive composition
|
JPH07113773B2
(en)
*
|
1986-07-04 |
1995-12-06 |
株式会社日立製作所 |
Pattern formation method
|
EP0255989B1
(en)
*
|
1986-08-06 |
1990-11-22 |
Ciba-Geigy Ag |
Negative photoresist on the basis of polyphenols and epoxide compounds or vinyl ethers
|
US5300380A
(en)
*
|
1986-08-06 |
1994-04-05 |
Ciba-Geigy Corporation |
Process for the production of relief structures using a negative photoresist based on polyphenols and epoxy compounds or vinyl ethers
|
US4788127A
(en)
*
|
1986-11-17 |
1988-11-29 |
Eastman Kodak Company |
Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
|
US5128230A
(en)
*
|
1986-12-23 |
1992-07-07 |
Shipley Company Inc. |
Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
|
JPH07117747B2
(en)
*
|
1987-04-21 |
1995-12-18 |
富士写真フイルム株式会社 |
Photosensitive composition
|
JPS63265242A
(en)
*
|
1987-04-23 |
1988-11-01 |
Fuji Photo Film Co Ltd |
Malticolor image forming method
|
JPS6435436A
(en)
*
|
1987-07-30 |
1989-02-06 |
Mitsubishi Chem Ind |
Photosensitive planographic printing plate
|
DE3729035A1
(en)
*
|
1987-08-31 |
1989-03-09 |
Hoechst Ag |
POSITIVELY WORKING LIGHT-SENSITIVE MIXTURE AND PHOTOLITHOGRAPHIC RECORDING MATERIAL MADE THEREOF
|
US4927956A
(en)
*
|
1987-09-16 |
1990-05-22 |
Hoechst Celanese Corporation |
3,5-disubstituted-4-acetoxystyrene and process for its production
|
JP2693472B2
(en)
*
|
1987-11-26 |
1997-12-24 |
株式会社東芝 |
Resist
|
DE3800617A1
(en)
*
|
1988-01-12 |
1989-07-20 |
Hoechst Ag |
ELECTROPHOTOGRAPHIC RECORDING MATERIAL
|
US4824758A
(en)
*
|
1988-01-25 |
1989-04-25 |
Hoechst Celanese Corp |
Photoresist compositions based on acetoxystyrene copolymers
|
DE3812326A1
(en)
*
|
1988-04-14 |
1989-10-26 |
Basf Ag |
POSITIVELY WORKING, RADIATION-SENSITIVE MIXTURE BASED ON ACID-CLEARABLE AND PHOTOCHEMICALLY ACID-RELATING COMPOUNDS AND METHOD FOR THE PRODUCTION OF RELIEF PATTERNS AND RELIEF IMAGES
|
DE3820699A1
(en)
*
|
1988-06-18 |
1989-12-21 |
Hoechst Ag |
RADIATION-SENSITIVE MIXTURE AND RADIATION-SENSITIVE RECORDING MATERIAL MANUFACTURED THEREOF
|
US5342727A
(en)
*
|
1988-10-21 |
1994-08-30 |
Hoechst Celanese Corp. |
Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
|
DE3837499A1
(en)
*
|
1988-11-04 |
1990-05-23 |
Hoechst Ag |
METHOD FOR PRODUCING SUBSTITUTED 1,2-NAPHTHOQUINONE- (2) -DIAZIDE-4-SULFONIC ACID ESTERS AND THE USE THEREOF IN A RADIATION-SENSITIVE MIXTURE
|
DE3837500A1
(en)
*
|
1988-11-04 |
1990-05-23 |
Hoechst Ag |
NEW RADIATION-SENSITIVE COMPOUNDS, MADE BY THIS RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL
|
US5128232A
(en)
*
|
1989-05-22 |
1992-07-07 |
Shiply Company Inc. |
Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
|
DE3940911A1
(en)
*
|
1989-12-12 |
1991-06-13 |
Hoechst Ag |
PROCESS FOR PRODUCING NEGATIVE COPIES
|
DE4002397A1
(en)
*
|
1990-01-27 |
1991-08-01 |
Hoechst Ag |
Positive photosensitive mixt. contg. hydroxy-aralkyl acrylate polymer - and sensitiser, useful in printing plate mfr. and as photoresist
|
DE4003025A1
(en)
*
|
1990-02-02 |
1991-08-08 |
Hoechst Ag |
RADIATION-SENSITIVE MIXTURE, RADIATION-SENSITIVE RECORDING MATERIAL PRODUCED THEREOF AND METHOD FOR THE PRODUCTION OF RELIEF RECORDS
|
DE4004719A1
(en)
*
|
1990-02-15 |
1991-08-22 |
Hoechst Ag |
RADIATION-SENSITIVE MIXTURE, RADIATION-RECESSED RECORDING MATERIAL PRODUCED HEREOF AND METHOD FOR PRODUCING CROSS-REFERENCES
|
US5210137A
(en)
*
|
1990-11-19 |
1993-05-11 |
Shell Oil Company |
Polyketone polymer blends
|
EP0501919A1
(en)
*
|
1991-03-01 |
1992-09-02 |
Ciba-Geigy Ag |
Radiation-sensitive compositions based on polyphenols and acetals
|
US5200460A
(en)
*
|
1991-04-30 |
1993-04-06 |
Shell Oil Company |
Polyacetal polymer blends
|
US5550004A
(en)
*
|
1992-05-06 |
1996-08-27 |
Ocg Microelectronic Materials, Inc. |
Chemically amplified radiation-sensitive composition
|
US5340687A
(en)
*
|
1992-05-06 |
1994-08-23 |
Ocg Microelectronic Materials, Inc. |
Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
|
KR950004908B1
(en)
*
|
1992-09-09 |
1995-05-15 |
삼성전자주식회사 |
Photoresist compositions and patterning method of using them
|
DE19507618A1
(en)
*
|
1995-03-04 |
1996-09-05 |
Hoechst Ag |
Polymers and photosensitive mixture containing them
|
US5853947A
(en)
*
|
1995-12-21 |
1998-12-29 |
Clariant Finance (Bvi) Limited |
Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
|
US5719004A
(en)
*
|
1996-08-07 |
1998-02-17 |
Clariant Finance (Bvi) Limited |
Positive photoresist composition containing a 2,4-dinitro-1-naphthol
|
US5763135A
(en)
*
|
1996-09-30 |
1998-06-09 |
Clariant Finance (Bvi) Limited |
Light sensitive composition containing an arylhydrazo dye
|
US6103443A
(en)
*
|
1997-11-21 |
2000-08-15 |
Clariant Finance Lmited |
Photoresist composition containing a novel polymer
|
DE19803564A1
(en)
|
1998-01-30 |
1999-08-05 |
Agfa Gevaert Ag |
Polymers with units of N-substituted maleimide and their use in radiation-sensitive mixtures
|
US6783914B1
(en)
|
2000-02-25 |
2004-08-31 |
Massachusetts Institute Of Technology |
Encapsulated inorganic resists
|
US6936398B2
(en)
|
2001-05-09 |
2005-08-30 |
Massachusetts Institute Of Technology |
Resist with reduced line edge roughness
|
JP2014510626A
(en)
|
2011-03-10 |
2014-05-01 |
スリーエム イノベイティブ プロパティズ カンパニー |
Filter media
|
US8703385B2
(en)
|
2012-02-10 |
2014-04-22 |
3M Innovative Properties Company |
Photoresist composition
|
US8715904B2
(en)
|
2012-04-27 |
2014-05-06 |
3M Innovative Properties Company |
Photocurable composition
|
WO2014025716A1
(en)
|
2012-08-09 |
2014-02-13 |
3M Innovative Properties Company |
Photocurable compositions
|
US8883402B2
(en)
|
2012-08-09 |
2014-11-11 |
3M Innovative Properties Company |
Photocurable compositions
|