|
US3939047A
(en)
*
|
1971-11-15 |
1976-02-17 |
Nippon Electric Co., Ltd. |
Method for fabricating electrode structure for a semiconductor device having a shallow junction
|
|
FR2285716A1
(fr)
*
|
1974-09-18 |
1976-04-16 |
Radiotechnique Compelec |
Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
|
|
US4005452A
(en)
*
|
1974-11-15 |
1977-01-25 |
International Telephone And Telegraph Corporation |
Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
|
|
US3971710A
(en)
*
|
1974-11-29 |
1976-07-27 |
Ibm |
Anodized articles and process of preparing same
|
|
JPS51111069A
(en)
*
|
1975-03-26 |
1976-10-01 |
Hitachi Ltd |
Semiconductor device
|
|
DE2539193C3
(de)
*
|
1975-09-03 |
1979-04-19 |
Siemens Ag, 1000 Berlin Und 8000 Muenchen |
Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
|
|
SE7803385L
(sv)
*
|
1978-03-23 |
1979-09-24 |
Olsson Kjell Ingvar |
Metod att meta vetskors ytspenning och anordning for genomforande av metoden ifraga
|
|
US4146440A
(en)
*
|
1978-04-03 |
1979-03-27 |
Burroughs Corporation |
Method for forming an aluminum interconnect structure on an integrated circuit chip
|
|
DE2902665A1
(de)
*
|
1979-01-24 |
1980-08-07 |
Siemens Ag |
Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
|
|
US4433004A
(en)
*
|
1979-07-11 |
1984-02-21 |
Tokyo Shibaura Denki Kabushiki Kaisha |
Semiconductor device and a method for manufacturing the same
|
|
JPS5628522U
(enExample)
*
|
1979-08-11 |
1981-03-17 |
|
|
|
JPS5633842A
(en)
*
|
1979-08-28 |
1981-04-04 |
Nec Corp |
Manufacture of semiconductor device
|
|
FR2466103A1
(fr)
*
|
1979-09-18 |
1981-03-27 |
Lerouzic Jean |
Procede de realisation d'un reseau d'interconnexion de composants electroniques a conducteurs en aluminium et isolant en alumine et reseau d'interconnexion obtenu par ce procede
|
|
JPS56155549A
(en)
*
|
1980-04-30 |
1981-12-01 |
Fujitsu Ltd |
Manufacture of semiconductor device
|
|
DE3217026A1
(de)
*
|
1981-05-06 |
1982-12-30 |
Mitsubishi Denki K.K., Tokyo |
Halbleitervorrichtung
|
|
JPS5886742A
(ja)
*
|
1981-11-18 |
1983-05-24 |
Nec Corp |
半導体装置の製造方法
|
|
US7368045B2
(en)
*
|
2005-01-27 |
2008-05-06 |
International Business Machines Corporation |
Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
|
|
JP2009132974A
(ja)
*
|
2007-11-30 |
2009-06-18 |
Fujifilm Corp |
微細構造体
|