FR2168435A1 - - Google Patents

Info

Publication number
FR2168435A1
FR2168435A1 FR7301578A FR7301578A FR2168435A1 FR 2168435 A1 FR2168435 A1 FR 2168435A1 FR 7301578 A FR7301578 A FR 7301578A FR 7301578 A FR7301578 A FR 7301578A FR 2168435 A1 FR2168435 A1 FR 2168435A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7301578A
Other languages
French (fr)
Other versions
FR2168435B1 (cs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2168435A1 publication Critical patent/FR2168435A1/fr
Application granted granted Critical
Publication of FR2168435B1 publication Critical patent/FR2168435B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7301578A 1972-01-18 1973-01-17 Expired FR2168435B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7200677A NL7200677A (cs) 1972-01-18 1972-01-18

Publications (2)

Publication Number Publication Date
FR2168435A1 true FR2168435A1 (cs) 1973-08-31
FR2168435B1 FR2168435B1 (cs) 1976-08-27

Family

ID=19815182

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7301578A Expired FR2168435B1 (cs) 1972-01-18 1973-01-17

Country Status (7)

Country Link
JP (1) JPS504975A (cs)
BE (1) BE794122A (cs)
DE (1) DE2301148A1 (cs)
FR (1) FR2168435B1 (cs)
GB (1) GB1414202A (cs)
IT (1) IT978173B (cs)
NL (1) NL7200677A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344124A1 (fr) * 1976-03-12 1977-10-07 Ibm Procede de fabrication de dispositifs semi-conducteurs
EP0206514A1 (en) * 1985-05-21 1986-12-30 Sumitomo Electric Industries Limited Double crucible for single crystal growth
EP0319804A1 (en) * 1987-11-28 1989-06-14 Kabushiki Kaisha Toshiba Semiconductor wafer surface treatment method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535947B2 (en) * 2006-10-20 2009-05-19 Raytheon Company Enhanced beam quality from a laser rod using interstitial dopants
CN109103088B (zh) * 2018-08-30 2020-09-01 成都海威华芯科技有限公司 一种欧姆接触金属锗的蒸镀方法及其应用
CN115726025A (zh) * 2021-08-31 2023-03-03 隆基绿能科技股份有限公司 一种吸料装置和吸料方法
CN114227485B (zh) * 2021-12-20 2022-09-02 连云港国伦石英制品有限公司 一种大尺寸硅片氧化掺杂用石英器件的成型加工及清洗装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344124A1 (fr) * 1976-03-12 1977-10-07 Ibm Procede de fabrication de dispositifs semi-conducteurs
EP0206514A1 (en) * 1985-05-21 1986-12-30 Sumitomo Electric Industries Limited Double crucible for single crystal growth
EP0319804A1 (en) * 1987-11-28 1989-06-14 Kabushiki Kaisha Toshiba Semiconductor wafer surface treatment method
US4971920A (en) * 1987-11-28 1990-11-20 Kabushiki Kaisha Toshiba Gettering method for semiconductor wafers

Also Published As

Publication number Publication date
NL7200677A (cs) 1973-07-20
DE2301148A1 (de) 1973-07-26
IT978173B (it) 1974-09-20
GB1414202A (en) 1975-11-19
BE794122A (fr) 1973-07-16
FR2168435B1 (cs) 1976-08-27
JPS504975A (cs) 1975-01-20

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Legal Events

Date Code Title Description
ST Notification of lapse