FR2156543B1 - - Google Patents
Info
- Publication number
- FR2156543B1 FR2156543B1 FR7224473A FR7224473A FR2156543B1 FR 2156543 B1 FR2156543 B1 FR 2156543B1 FR 7224473 A FR7224473 A FR 7224473A FR 7224473 A FR7224473 A FR 7224473A FR 2156543 B1 FR2156543 B1 FR 2156543B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
- H10D88/01—Manufacture or treatment
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- H10P90/1906—
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- H10P95/00—
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- H10W10/021—
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- H10W10/061—
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- H10W10/181—
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- H10W10/20—
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- H10W20/40—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/008—Bi-level fabrication
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19145571A | 1971-10-21 | 1971-10-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2156543A1 FR2156543A1 (enExample) | 1973-06-01 |
| FR2156543B1 true FR2156543B1 (enExample) | 1977-08-26 |
Family
ID=22705564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7224473A Expired FR2156543B1 (enExample) | 1971-10-21 | 1972-07-06 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3791024A (enExample) |
| JP (1) | JPS5112992B2 (enExample) |
| AU (1) | AU462435B2 (enExample) |
| BE (1) | BE786089A (enExample) |
| CA (1) | CA967288A (enExample) |
| DE (1) | DE2235185A1 (enExample) |
| ES (2) | ES404273A1 (enExample) |
| FR (1) | FR2156543B1 (enExample) |
| GB (1) | GB1339095A (enExample) |
| IT (1) | IT956533B (enExample) |
| NL (1) | NL7209192A (enExample) |
| SE (1) | SE376327B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
| US4094057A (en) * | 1976-03-29 | 1978-06-13 | International Business Machines Corporation | Field effect transistor lost film fabrication process |
| JPS5721856B2 (en) * | 1977-11-28 | 1982-05-10 | Nippon Telegraph & Telephone | Semiconductor and its manufacture |
| US4199384A (en) * | 1979-01-29 | 1980-04-22 | Rca Corporation | Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands |
| JPH0628313B2 (ja) * | 1982-01-19 | 1994-04-13 | キヤノン株式会社 | 半導体素子 |
| US4481707A (en) * | 1983-02-24 | 1984-11-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor |
| JPS6072243A (ja) * | 1983-09-28 | 1985-04-24 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
| US4879585A (en) * | 1984-03-31 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US4897698A (en) * | 1984-10-31 | 1990-01-30 | Texas Instruments Incorporated | Horizontal structure thin film transistor |
| JPH01162376A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5525536A (en) * | 1991-12-26 | 1996-06-11 | Rohm Co., Ltd. | Method for producing SOI substrate and semiconductor device using the same |
| US5952695A (en) * | 1997-03-05 | 1999-09-14 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film structures |
| US5889293A (en) * | 1997-04-04 | 1999-03-30 | International Business Machines Corporation | Electrical contact to buried SOI structures |
| US5834350A (en) * | 1997-06-11 | 1998-11-10 | Advanced Micro Devices, Inc. | Elevated transistor fabrication technique |
| US6353246B1 (en) * | 1998-11-23 | 2002-03-05 | International Business Machines Corporation | Semiconductor device including dislocation in merged SOI/DRAM chips |
| JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6259135B1 (en) | 1999-09-24 | 2001-07-10 | International Business Machines Corporation | MOS transistors structure for reducing the size of pitch limited circuits |
| GB2492706B (en) | 2010-05-05 | 2016-06-22 | Allsteel Inc | Moveable and demountable wall panel system for butt-glazed wall panels |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
| US3359467A (en) * | 1965-02-04 | 1967-12-19 | Texas Instruments Inc | Resistors for integrated circuits |
| US3442011A (en) * | 1965-06-30 | 1969-05-06 | Texas Instruments Inc | Method for isolating individual devices in an integrated circuit monolithic bar |
| US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
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1971
- 1971-10-21 US US00191455A patent/US3791024A/en not_active Expired - Lifetime
-
1972
- 1972-06-13 IT IT25629/72A patent/IT956533B/it active
- 1972-06-26 ES ES404273A patent/ES404273A1/es not_active Expired
- 1972-06-30 NL NL7209192A patent/NL7209192A/xx not_active Application Discontinuation
- 1972-07-06 FR FR7224473A patent/FR2156543B1/fr not_active Expired
- 1972-07-10 BE BE786089A patent/BE786089A/xx unknown
- 1972-07-18 DE DE2235185A patent/DE2235185A1/de active Pending
- 1972-07-18 SE SE7209433A patent/SE376327B/xx unknown
- 1972-07-19 CA CA147,513A patent/CA967288A/en not_active Expired
- 1972-07-20 JP JP47073008A patent/JPS5112992B2/ja not_active Expired
- 1972-07-21 GB GB3429272A patent/GB1339095A/en not_active Expired
- 1972-08-18 AU AU45730/72A patent/AU462435B2/en not_active Expired
-
1973
- 1973-01-15 ES ES410640A patent/ES410640A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3791024A (en) | 1974-02-12 |
| JPS5112992B2 (enExample) | 1976-04-23 |
| SE376327B (enExample) | 1975-05-12 |
| FR2156543A1 (enExample) | 1973-06-01 |
| ES410640A1 (es) | 1975-12-01 |
| BE786089A (fr) | 1972-11-03 |
| CA967288A (en) | 1975-05-06 |
| GB1339095A (en) | 1973-11-28 |
| JPS4850679A (enExample) | 1973-07-17 |
| AU462435B2 (en) | 1975-06-26 |
| AU4573072A (en) | 1974-03-07 |
| ES404273A1 (es) | 1975-06-01 |
| NL7209192A (enExample) | 1973-04-25 |
| IT956533B (it) | 1973-10-10 |
| DE2235185A1 (de) | 1973-04-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| ST | Notification of lapse |