FR2138339A1 - - Google Patents
Info
- Publication number
- FR2138339A1 FR2138339A1 FR7118642A FR7118642A FR2138339A1 FR 2138339 A1 FR2138339 A1 FR 2138339A1 FR 7118642 A FR7118642 A FR 7118642A FR 7118642 A FR7118642 A FR 7118642A FR 2138339 A1 FR2138339 A1 FR 2138339A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/03—Auxiliary internally generated electrical energy
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7118642A FR2138339B1 (oth) | 1971-05-24 | 1971-05-24 | |
| IT68609/72A IT958931B (it) | 1971-05-24 | 1972-05-20 | Procedimento per la fabbricazione di condensatori di microstruttura elettronica |
| NL7206878A NL7206878A (oth) | 1971-05-24 | 1972-05-20 | |
| US00255799A US3839164A (en) | 1971-05-24 | 1972-05-22 | Method of manufacturing capacitors in an electronic microstructure |
| GB2389072A GB1387018A (en) | 1971-05-24 | 1972-05-22 | Method of manufacturing capacitors in an electronic microstructure |
| CH755172A CH542501A (de) | 1971-05-24 | 1972-05-23 | Verfahren zur Herstellung von Kondensatoren in einer elektronische Halbleiteranordnung |
| SE06696/72A SE369984B (oth) | 1971-05-24 | 1972-05-23 | |
| AU42567/72A AU4256772A (en) | 1971-05-24 | 1972-05-23 | Manufacturing capacitors in an electronic microstructure |
| BE783832A BE783832A (nl) | 1971-05-24 | 1972-05-23 | Werkwijze voor het vervaardigen van kondensatoren in een elektronische mikrostruktuur |
| CA142,707A CA959791A (en) | 1971-05-24 | 1972-05-23 | Method of manufacturing capacitors in an electronic microstructure |
| DE19722225163 DE2225163C3 (de) | 1971-05-24 | 1972-05-24 | Verfahren zur Herstellung von Kondensatoren in einer planaren elektronischen MikroStruktur |
| JP47051592A JPS515279B1 (oth) | 1971-05-24 | 1972-05-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7118642A FR2138339B1 (oth) | 1971-05-24 | 1971-05-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2138339A1 true FR2138339A1 (oth) | 1973-01-05 |
| FR2138339B1 FR2138339B1 (oth) | 1974-08-19 |
Family
ID=9077495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7118642A Expired FR2138339B1 (oth) | 1971-05-24 | 1971-05-24 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3839164A (oth) |
| JP (1) | JPS515279B1 (oth) |
| AU (1) | AU4256772A (oth) |
| BE (1) | BE783832A (oth) |
| CA (1) | CA959791A (oth) |
| CH (1) | CH542501A (oth) |
| FR (1) | FR2138339B1 (oth) |
| GB (1) | GB1387018A (oth) |
| IT (1) | IT958931B (oth) |
| NL (1) | NL7206878A (oth) |
| SE (1) | SE369984B (oth) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2231043A1 (oth) * | 1973-05-24 | 1974-12-20 | Citizen Watch Co Ltd | |
| FR2509516A1 (fr) * | 1981-07-08 | 1983-01-14 | Labo Electronique Physique | Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise |
| DE3314100A1 (de) * | 1982-04-30 | 1983-11-03 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum herstellen eines integrierten kondensators und eine auf diese weise erhaltene anordnung |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3137708A1 (de) * | 1981-09-22 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integratorschaltung mit einem differenzverstaerker |
| DE3214991A1 (de) * | 1982-04-22 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbaustein mit diskretem kondensator |
| US6271131B1 (en) * | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
| US6284655B1 (en) | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
| US6239028B1 (en) * | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
| US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
| US6329286B1 (en) | 1999-04-27 | 2001-12-11 | Micron Technology, Inc. | Methods for forming conformal iridium layers on substrates |
| US6660631B1 (en) | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
| KR100849854B1 (ko) * | 2007-02-23 | 2008-08-01 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3466719A (en) * | 1967-01-11 | 1969-09-16 | Texas Instruments Inc | Method of fabricating thin film capacitors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2640806A (en) * | 1949-06-27 | 1953-06-02 | Kaiser Aluminium Chem Corp | Process for polishing aluminum |
| US2853445A (en) * | 1956-04-06 | 1958-09-23 | Aerovox Corp | Process of etching aluminum foil for electrolytic capacitor |
| US3389060A (en) * | 1964-06-15 | 1968-06-18 | Gen Motors Corp | Method of indium coating metallic articles |
| US3423821A (en) * | 1965-03-18 | 1969-01-28 | Hitachi Ltd | Method of producing thin film integrated circuits |
-
1971
- 1971-05-24 FR FR7118642A patent/FR2138339B1/fr not_active Expired
-
1972
- 1972-05-20 IT IT68609/72A patent/IT958931B/it active
- 1972-05-20 NL NL7206878A patent/NL7206878A/xx unknown
- 1972-05-22 GB GB2389072A patent/GB1387018A/en not_active Expired
- 1972-05-22 US US00255799A patent/US3839164A/en not_active Expired - Lifetime
- 1972-05-23 AU AU42567/72A patent/AU4256772A/en not_active Expired
- 1972-05-23 SE SE06696/72A patent/SE369984B/xx unknown
- 1972-05-23 CH CH755172A patent/CH542501A/de not_active IP Right Cessation
- 1972-05-23 BE BE783832A patent/BE783832A/nl unknown
- 1972-05-23 CA CA142,707A patent/CA959791A/en not_active Expired
- 1972-05-24 JP JP47051592A patent/JPS515279B1/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3466719A (en) * | 1967-01-11 | 1969-09-16 | Texas Instruments Inc | Method of fabricating thin film capacitors |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2231043A1 (oth) * | 1973-05-24 | 1974-12-20 | Citizen Watch Co Ltd | |
| FR2509516A1 (fr) * | 1981-07-08 | 1983-01-14 | Labo Electronique Physique | Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise |
| EP0070064A1 (fr) * | 1981-07-08 | 1983-01-19 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Procédé destiné à accroitre la tension de claquage d'un condensateur intégré et condensateur ainsi réalisé |
| DE3314100A1 (de) * | 1982-04-30 | 1983-11-03 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum herstellen eines integrierten kondensators und eine auf diese weise erhaltene anordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2138339B1 (oth) | 1974-08-19 |
| AU4256772A (en) | 1973-11-29 |
| BE783832A (nl) | 1972-11-23 |
| DE2225163A1 (de) | 1972-12-07 |
| IT958931B (it) | 1973-10-30 |
| SE369984B (oth) | 1974-09-23 |
| NL7206878A (oth) | 1972-11-28 |
| DE2225163B2 (de) | 1976-11-25 |
| CA959791A (en) | 1974-12-24 |
| US3839164A (en) | 1974-10-01 |
| GB1387018A (en) | 1975-03-12 |
| CH542501A (de) | 1973-09-30 |
| JPS515279B1 (oth) | 1976-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |