FR2138339A1 - - Google Patents

Info

Publication number
FR2138339A1
FR2138339A1 FR7118642A FR7118642A FR2138339A1 FR 2138339 A1 FR2138339 A1 FR 2138339A1 FR 7118642 A FR7118642 A FR 7118642A FR 7118642 A FR7118642 A FR 7118642A FR 2138339 A1 FR2138339 A1 FR 2138339A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7118642A
Other versions
FR2138339B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7118642A priority Critical patent/FR2138339B1/fr
Priority to IT68609/72A priority patent/IT958931B/it
Priority to NL7206878A priority patent/NL7206878A/xx
Priority to US00255799A priority patent/US3839164A/en
Priority to GB2389072A priority patent/GB1387018A/en
Priority to AU42567/72A priority patent/AU4256772A/en
Priority to BE783832A priority patent/BE783832A/nl
Priority to CA142,707A priority patent/CA959791A/en
Priority to SE06696/72A priority patent/SE369984B/xx
Priority to CH755172A priority patent/CH542501A/de
Priority to DE19722225163 priority patent/DE2225163C3/de
Priority to JP47051592A priority patent/JPS515279B1/ja
Publication of FR2138339A1 publication Critical patent/FR2138339A1/fr
Application granted granted Critical
Publication of FR2138339B1 publication Critical patent/FR2138339B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/03—Auxiliary internally generated electrical energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
FR7118642A 1971-05-24 1971-05-24 Expired FR2138339B1 (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
FR7118642A FR2138339B1 (fr) 1971-05-24 1971-05-24
IT68609/72A IT958931B (it) 1971-05-24 1972-05-20 Procedimento per la fabbricazione di condensatori di microstruttura elettronica
NL7206878A NL7206878A (fr) 1971-05-24 1972-05-20
GB2389072A GB1387018A (en) 1971-05-24 1972-05-22 Method of manufacturing capacitors in an electronic microstructure
US00255799A US3839164A (en) 1971-05-24 1972-05-22 Method of manufacturing capacitors in an electronic microstructure
BE783832A BE783832A (nl) 1971-05-24 1972-05-23 Werkwijze voor het vervaardigen van kondensatoren in een elektronische mikrostruktuur
AU42567/72A AU4256772A (en) 1971-05-24 1972-05-23 Manufacturing capacitors in an electronic microstructure
CA142,707A CA959791A (en) 1971-05-24 1972-05-23 Method of manufacturing capacitors in an electronic microstructure
SE06696/72A SE369984B (fr) 1971-05-24 1972-05-23
CH755172A CH542501A (de) 1971-05-24 1972-05-23 Verfahren zur Herstellung von Kondensatoren in einer elektronische Halbleiteranordnung
DE19722225163 DE2225163C3 (de) 1971-05-24 1972-05-24 Verfahren zur Herstellung von Kondensatoren in einer planaren elektronischen MikroStruktur
JP47051592A JPS515279B1 (fr) 1971-05-24 1972-05-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7118642A FR2138339B1 (fr) 1971-05-24 1971-05-24

Publications (2)

Publication Number Publication Date
FR2138339A1 true FR2138339A1 (fr) 1973-01-05
FR2138339B1 FR2138339B1 (fr) 1974-08-19

Family

ID=9077495

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7118642A Expired FR2138339B1 (fr) 1971-05-24 1971-05-24

Country Status (11)

Country Link
US (1) US3839164A (fr)
JP (1) JPS515279B1 (fr)
AU (1) AU4256772A (fr)
BE (1) BE783832A (fr)
CA (1) CA959791A (fr)
CH (1) CH542501A (fr)
FR (1) FR2138339B1 (fr)
GB (1) GB1387018A (fr)
IT (1) IT958931B (fr)
NL (1) NL7206878A (fr)
SE (1) SE369984B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2231043A1 (fr) * 1973-05-24 1974-12-20 Citizen Watch Co Ltd
FR2509516A1 (fr) * 1981-07-08 1983-01-14 Labo Electronique Physique Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise
DE3314100A1 (de) * 1982-04-30 1983-11-03 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum herstellen eines integrierten kondensators und eine auf diese weise erhaltene anordnung

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137708A1 (de) * 1981-09-22 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integratorschaltung mit einem differenzverstaerker
DE3214991A1 (de) * 1982-04-22 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Halbleiterbaustein mit diskretem kondensator
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6284655B1 (en) * 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
KR100849854B1 (ko) * 2007-02-23 2008-08-01 삼성전자주식회사 반도체 소자 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466719A (en) * 1967-01-11 1969-09-16 Texas Instruments Inc Method of fabricating thin film capacitors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2640806A (en) * 1949-06-27 1953-06-02 Kaiser Aluminium Chem Corp Process for polishing aluminum
US2853445A (en) * 1956-04-06 1958-09-23 Aerovox Corp Process of etching aluminum foil for electrolytic capacitor
US3389060A (en) * 1964-06-15 1968-06-18 Gen Motors Corp Method of indium coating metallic articles
US3423821A (en) * 1965-03-18 1969-01-28 Hitachi Ltd Method of producing thin film integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466719A (en) * 1967-01-11 1969-09-16 Texas Instruments Inc Method of fabricating thin film capacitors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2231043A1 (fr) * 1973-05-24 1974-12-20 Citizen Watch Co Ltd
FR2509516A1 (fr) * 1981-07-08 1983-01-14 Labo Electronique Physique Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise
EP0070064A1 (fr) * 1981-07-08 1983-01-19 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé destiné à accroitre la tension de claquage d'un condensateur intégré et condensateur ainsi réalisé
DE3314100A1 (de) * 1982-04-30 1983-11-03 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zum herstellen eines integrierten kondensators und eine auf diese weise erhaltene anordnung

Also Published As

Publication number Publication date
FR2138339B1 (fr) 1974-08-19
BE783832A (nl) 1972-11-23
GB1387018A (en) 1975-03-12
CH542501A (de) 1973-09-30
SE369984B (fr) 1974-09-23
AU4256772A (en) 1973-11-29
DE2225163B2 (de) 1976-11-25
DE2225163A1 (de) 1972-12-07
US3839164A (en) 1974-10-01
IT958931B (it) 1973-10-30
JPS515279B1 (fr) 1976-02-18
CA959791A (en) 1974-12-24
NL7206878A (fr) 1972-11-28

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Legal Events

Date Code Title Description
ST Notification of lapse