FR2106484B1 - - Google Patents
Info
- Publication number
- FR2106484B1 FR2106484B1 FR7121209A FR7121209A FR2106484B1 FR 2106484 B1 FR2106484 B1 FR 2106484B1 FR 7121209 A FR7121209 A FR 7121209A FR 7121209 A FR7121209 A FR 7121209A FR 2106484 B1 FR2106484 B1 FR 2106484B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7184070A | 1970-09-14 | 1970-09-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2106484A1 FR2106484A1 (show.php) | 1972-05-05 |
| FR2106484B1 true FR2106484B1 (show.php) | 1978-02-17 |
Family
ID=22103926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7121209A Expired FR2106484B1 (show.php) | 1970-09-14 | 1971-06-11 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3749614A (show.php) |
| JP (1) | JPS5040989B1 (show.php) |
| CA (1) | CA937337A (show.php) |
| DE (1) | DE2128884A1 (show.php) |
| FR (1) | FR2106484B1 (show.php) |
| GB (1) | GB1343334A (show.php) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2335333B1 (de) * | 1973-07-11 | 1975-01-16 | Siemens Ag | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
| JPS5066184A (show.php) * | 1973-10-12 | 1975-06-04 | ||
| US4024626A (en) * | 1974-12-09 | 1977-05-24 | Hughes Aircraft Company | Method of making integrated transistor matrix for flat panel liquid crystal display |
| US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
| US4002501A (en) * | 1975-06-16 | 1977-01-11 | Rockwell International Corporation | High speed, high yield CMOS/SOS process |
| US4050965A (en) * | 1975-10-21 | 1977-09-27 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous fabrication of CMOS transistors and bipolar devices |
| JPS5317069A (en) * | 1976-07-30 | 1978-02-16 | Fujitsu Ltd | Semiconductor device and its production |
| US4097314A (en) * | 1976-12-30 | 1978-06-27 | Rca Corp. | Method of making a sapphire gate transistor |
| FR2472271A2 (fr) * | 1979-12-18 | 1981-06-26 | France Etat | Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces, et composants obtenus par ce procede, notamment tetes de restitution pour telecopieurs |
| JPS5748246A (en) | 1980-08-13 | 1982-03-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4389768A (en) * | 1981-04-17 | 1983-06-28 | International Business Machines Corporation | Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors |
| USH512H (en) | 1981-09-28 | 1988-08-02 | The United States Of America As Represented By The Secretary Of The Army | Automated universal array |
| GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
| DE3334167A1 (de) * | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
| IT1213120B (it) * | 1984-01-10 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante. |
| US5185283A (en) * | 1987-10-22 | 1993-02-09 | Matsushita Electronics Corporation | Method of making master slice type integrated circuit device |
| US6090646A (en) | 1993-05-26 | 2000-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
| KR0124958B1 (ko) * | 1993-11-29 | 1997-12-11 | 김광호 | 액정용 박막트랜지스터 및 그 제조방법 |
-
1970
- 1970-09-14 US US00071840A patent/US3749614A/en not_active Expired - Lifetime
-
1971
- 1971-06-11 GB GB2755471A patent/GB1343334A/en not_active Expired
- 1971-06-11 DE DE19712128884 patent/DE2128884A1/de active Pending
- 1971-06-11 FR FR7121209A patent/FR2106484B1/fr not_active Expired
- 1971-06-14 CA CA115601A patent/CA937337A/en not_active Expired
- 1971-06-14 JP JP46042462A patent/JPS5040989B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5040989B1 (show.php) | 1975-12-27 |
| GB1343334A (en) | 1974-01-10 |
| CA937337A (en) | 1973-11-20 |
| FR2106484A1 (show.php) | 1972-05-05 |
| DE2128884A1 (de) | 1972-03-23 |
| US3749614A (en) | 1973-07-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |