JPS5040989B1 - - Google Patents

Info

Publication number
JPS5040989B1
JPS5040989B1 JP46042462A JP4246271A JPS5040989B1 JP S5040989 B1 JPS5040989 B1 JP S5040989B1 JP 46042462 A JP46042462 A JP 46042462A JP 4246271 A JP4246271 A JP 4246271A JP S5040989 B1 JPS5040989 B1 JP S5040989B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46042462A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5040989B1 publication Critical patent/JPS5040989B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
JP46042462A 1970-09-14 1971-06-14 Pending JPS5040989B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7184070A 1970-09-14 1970-09-14

Publications (1)

Publication Number Publication Date
JPS5040989B1 true JPS5040989B1 (ja) 1975-12-27

Family

ID=22103926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46042462A Pending JPS5040989B1 (ja) 1970-09-14 1971-06-14

Country Status (6)

Country Link
US (1) US3749614A (ja)
JP (1) JPS5040989B1 (ja)
CA (1) CA937337A (ja)
DE (1) DE2128884A1 (ja)
FR (1) FR2106484B1 (ja)
GB (1) GB1343334A (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2335333B1 (de) * 1973-07-11 1975-01-16 Siemens Ag Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik
JPS5066184A (ja) * 1973-10-12 1975-06-04
US4024626A (en) * 1974-12-09 1977-05-24 Hughes Aircraft Company Method of making integrated transistor matrix for flat panel liquid crystal display
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
US4002501A (en) * 1975-06-16 1977-01-11 Rockwell International Corporation High speed, high yield CMOS/SOS process
US4050965A (en) * 1975-10-21 1977-09-27 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous fabrication of CMOS transistors and bipolar devices
JPS5317069A (en) * 1976-07-30 1978-02-16 Fujitsu Ltd Semiconductor device and its production
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
FR2472271A2 (fr) * 1979-12-18 1981-06-26 France Etat Procede de realisation de composants semi-conducteurs, notamment de transistors a couches minces, et composants obtenus par ce procede, notamment tetes de restitution pour telecopieurs
JPS5748246A (en) 1980-08-13 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
USH512H (en) 1981-09-28 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Automated universal array
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.
US5185283A (en) * 1987-10-22 1993-02-09 Matsushita Electronics Corporation Method of making master slice type integrated circuit device
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
US6090646A (en) 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
KR0124958B1 (ko) * 1993-11-29 1997-12-11 김광호 액정용 박막트랜지스터 및 그 제조방법

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS JULY#N20=1970 *
SOLID-STATE ELECTRONICS#V13=1970 *

Also Published As

Publication number Publication date
GB1343334A (en) 1974-01-10
FR2106484A1 (ja) 1972-05-05
FR2106484B1 (ja) 1978-02-17
CA937337A (en) 1973-11-20
US3749614A (en) 1973-07-31
DE2128884A1 (de) 1972-03-23

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