FR2105864A5 - - Google Patents

Info

Publication number
FR2105864A5
FR2105864A5 FR7129454A FR7129454A FR2105864A5 FR 2105864 A5 FR2105864 A5 FR 2105864A5 FR 7129454 A FR7129454 A FR 7129454A FR 7129454 A FR7129454 A FR 7129454A FR 2105864 A5 FR2105864 A5 FR 2105864A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7129454A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR2105864A5 publication Critical patent/FR2105864A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P32/15—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
FR7129454A 1970-09-29 1971-07-30 Expired FR2105864A5 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7639970A 1970-09-29 1970-09-29

Publications (1)

Publication Number Publication Date
FR2105864A5 true FR2105864A5 (OSRAM) 1972-04-28

Family

ID=22131771

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7129454A Expired FR2105864A5 (OSRAM) 1970-09-29 1971-07-30

Country Status (4)

Country Link
US (1) US3669769A (OSRAM)
DE (1) DE2148119A1 (OSRAM)
FR (1) FR2105864A5 (OSRAM)
GB (1) GB1328170A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305195A3 (en) * 1987-08-27 1990-11-28 Texas Instruments Incorporated Continuous chemical vapor deposition growth of strain layer superlattices using conventional cvd reactors
FR2766845A1 (fr) * 1997-07-31 1999-02-05 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
DE2060839A1 (de) * 1970-12-10 1972-06-29 Siemens Ag Infrarotlampe mit Kolben aus Silicium
GB1361303A (en) * 1972-02-11 1974-07-24 Ferranti Ltd Manufacture of semiconductor devices
US3885061A (en) * 1973-08-17 1975-05-20 Rca Corp Dual growth rate method of depositing epitaxial crystalline layers
JPS5623739A (en) * 1979-08-04 1981-03-06 Tohoku Metal Ind Ltd Manufactue of semiconductor element having buried layer
US4504330A (en) * 1983-10-19 1985-03-12 International Business Machines Corporation Optimum reduced pressure epitaxial growth process to prevent autodoping
US4559091A (en) * 1984-06-15 1985-12-17 Regents Of The University Of California Method for producing hyperabrupt doping profiles in semiconductors
US4687682A (en) * 1986-05-02 1987-08-18 American Telephone And Telegraph Company, At&T Technologies, Inc. Back sealing of silicon wafers
JPH01161826A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 気相エピタキシャル成長法
US4859626A (en) * 1988-06-03 1989-08-22 Texas Instruments Incorporated Method of forming thin epitaxial layers using multistep growth for autodoping control

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305195A3 (en) * 1987-08-27 1990-11-28 Texas Instruments Incorporated Continuous chemical vapor deposition growth of strain layer superlattices using conventional cvd reactors
FR2766845A1 (fr) * 1997-07-31 1999-02-05 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
EP0897024A1 (fr) * 1997-07-31 1999-02-17 STMicroelectronics SA Procédé d'épitaxie sur un substrat de silicium comprenant des zones fortement dopées à l'arsenic

Also Published As

Publication number Publication date
GB1328170A (en) 1973-08-30
US3669769A (en) 1972-06-13
DE2148119A1 (de) 1972-03-30

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Legal Events

Date Code Title Description
ST Notification of lapse