FR2096566A1 - - Google Patents

Info

Publication number
FR2096566A1
FR2096566A1 FR7123522A FR7123522A FR2096566A1 FR 2096566 A1 FR2096566 A1 FR 2096566A1 FR 7123522 A FR7123522 A FR 7123522A FR 7123522 A FR7123522 A FR 7123522A FR 2096566 A1 FR2096566 A1 FR 2096566A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7123522A
Other languages
French (fr)
Other versions
FR2096566B1 (OSRAM
Inventor
G E Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2096566A1 publication Critical patent/FR2096566A1/fr
Application granted granted Critical
Publication of FR2096566B1 publication Critical patent/FR2096566B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10P50/667—
    • H10P95/00—
    • H10W20/062—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/042—Doping, graded, for tapered etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
FR7123522A 1970-06-29 1971-06-28 Expired FR2096566B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5078070A 1970-06-29 1970-06-29

Publications (2)

Publication Number Publication Date
FR2096566A1 true FR2096566A1 (OSRAM) 1972-02-18
FR2096566B1 FR2096566B1 (OSRAM) 1975-02-07

Family

ID=21967382

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123522A Expired FR2096566B1 (OSRAM) 1970-06-29 1971-06-28

Country Status (9)

Country Link
US (1) US3675319A (OSRAM)
JP (1) JPS557018B1 (OSRAM)
BE (1) BE768899A (OSRAM)
CA (1) CA922425A (OSRAM)
DE (1) DE2132099C3 (OSRAM)
FR (1) FR2096566B1 (OSRAM)
GB (1) GB1348731A (OSRAM)
NL (1) NL174413C (OSRAM)
SE (1) SE373983B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107342259A (zh) * 2016-04-28 2017-11-10 台湾积体电路制造股份有限公司 半导体装置的形成方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936331A (en) * 1974-04-01 1976-02-03 Fairchild Camera And Instrument Corporation Process for forming sloped topography contact areas between polycrystalline silicon and single-crystal silicon
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US4181564A (en) * 1978-04-24 1980-01-01 Bell Telephone Laboratories, Incorporated Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls
US4354309A (en) * 1978-12-29 1982-10-19 International Business Machines Corp. Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
US5285571A (en) * 1992-10-13 1994-02-15 General Electric Company Method for extending an electrical conductor over an edge of an HDI substrate
DE19649972C2 (de) * 1996-11-22 2002-11-07 Siemens Ag Verfahren zur Herstellung eines Leitungssatzes für Kraftfahrzeuge
US20140264340A1 (en) * 2013-03-14 2014-09-18 Sandia Corporation Reversible hybridization of large surface area array electronics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1379429A (fr) * 1963-01-31 1964-11-20 Motorola Inc Procédé d'isolement électrique pour circuits miniaturisés
DE2047799A1 (de) * 1969-10-31 1971-05-06 Fairchild Camera Instr Co Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3260634A (en) * 1961-02-17 1966-07-12 Motorola Inc Method of etching a semiconductor wafer to provide tapered dice
NL285523A (OSRAM) * 1961-11-24
DE1564896A1 (de) * 1966-08-30 1970-01-08 Telefunken Patent Halbleiteranordnung
JPS563951B2 (OSRAM) * 1973-05-15 1981-01-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1379429A (fr) * 1963-01-31 1964-11-20 Motorola Inc Procédé d'isolement électrique pour circuits miniaturisés
DE2047799A1 (de) * 1969-10-31 1971-05-06 Fairchild Camera Instr Co Halbleiterbauelement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107342259A (zh) * 2016-04-28 2017-11-10 台湾积体电路制造股份有限公司 半导体装置的形成方法
CN107342259B (zh) * 2016-04-28 2022-11-18 台湾积体电路制造股份有限公司 半导体装置的形成方法

Also Published As

Publication number Publication date
NL174413C (nl) 1984-06-01
BE768899A (fr) 1971-11-03
US3675319A (en) 1972-07-11
JPS557018B1 (OSRAM) 1980-02-21
SE373983B (OSRAM) 1975-02-17
DE2132099A1 (de) 1972-01-05
GB1348731A (en) 1974-03-20
DE2132099C3 (de) 1983-12-01
DE2132099B2 (de) 1979-10-11
CA922425A (en) 1973-03-06
NL7108656A (OSRAM) 1971-12-31
NL174413B (nl) 1984-01-02
FR2096566B1 (OSRAM) 1975-02-07

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