FR2095259A1 - - Google Patents

Info

Publication number
FR2095259A1
FR2095259A1 FR7121454A FR7121454A FR2095259A1 FR 2095259 A1 FR2095259 A1 FR 2095259A1 FR 7121454 A FR7121454 A FR 7121454A FR 7121454 A FR7121454 A FR 7121454A FR 2095259 A1 FR2095259 A1 FR 2095259A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7121454A
Other languages
French (fr)
Other versions
FR2095259B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2095259A1 publication Critical patent/FR2095259A1/fr
Application granted granted Critical
Publication of FR2095259B1 publication Critical patent/FR2095259B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7121454A 1970-06-15 1971-06-14 Expired FR2095259B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5100170 1970-06-15

Publications (2)

Publication Number Publication Date
FR2095259A1 true FR2095259A1 (enrdf_load_stackoverflow) 1972-02-11
FR2095259B1 FR2095259B1 (enrdf_load_stackoverflow) 1975-07-11

Family

ID=12874527

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7121454A Expired FR2095259B1 (enrdf_load_stackoverflow) 1970-06-15 1971-06-14

Country Status (3)

Country Link
DE (1) DE2128470A1 (enrdf_load_stackoverflow)
FR (1) FR2095259B1 (enrdf_load_stackoverflow)
GB (1) GB1314923A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1571569A (enrdf_load_stackoverflow) * 1967-06-08 1969-06-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1571569A (enrdf_load_stackoverflow) * 1967-06-08 1969-06-20

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(NITRURE DE SILICIUM" L.PIERRE ) *
(REVUE NEERLANDAISE PHILIPS RESEARCH REPORTS,VOL.25,NO.2,AVRIL 1970,PAGES 118-132,"LOCAL *
(REVUE NEERLANDAISE PHILIPS RESEARCH REPORTS,VOL.25,NO.2,AVRIL 1970,PAGES 118-132,"LOCAL OXYDATION OF SILICON AND ITS APPLICATION IN SEMINCONDUCTOR-DEVICE TECHNOLOGY" J.A.APPELS ET AL ) *
OXYDATION OF SILICON AND ITS APPLICATION IN SEMINCONDUCTOR-DEVICE TECHNOLOGY" J.A.APPELS ET AL ) *
RE1970,NO.133,PAGES 325-28"TECHNOLOGIE:C.I.ET(VUE FRANCAISE ELECTRONIQUE INDUSTRIELLE,MAI) *
RE1970,NO.133,PAGES 325-28"TECHNOLOGIE:C.I.ETNITRURE DE SILICIUM" L.PIERRE (VUE FRANCAISE ELECTRONIQUE INDUSTRIELLE,MAI) *

Also Published As

Publication number Publication date
FR2095259B1 (enrdf_load_stackoverflow) 1975-07-11
GB1314923A (en) 1973-04-26
DE2128470A1 (de) 1972-01-20

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Legal Events

Date Code Title Description
ST Notification of lapse