FR2092728A7 - N-doped silicon - by phosphorus diffusion from phosphine - Google Patents
N-doped silicon - by phosphorus diffusion from phosphineInfo
- Publication number
- FR2092728A7 FR2092728A7 FR7021676A FR7021676A FR2092728A7 FR 2092728 A7 FR2092728 A7 FR 2092728A7 FR 7021676 A FR7021676 A FR 7021676A FR 7021676 A FR7021676 A FR 7021676A FR 2092728 A7 FR2092728 A7 FR 2092728A7
- Authority
- FR
- France
- Prior art keywords
- phosphine
- batch
- doped silicon
- rhos
- minus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P32/1404—
-
- H10P32/171—
-
- H10P95/00—
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7021676A FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7021676A FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2092728A7 true FR2092728A7 (en) | 1972-01-28 |
| FR2092728B3 FR2092728B3 (enExample) | 1973-03-16 |
Family
ID=9057100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7021676A Expired FR2092728A7 (en) | 1970-06-12 | 1970-06-12 | N-doped silicon - by phosphorus diffusion from phosphine |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2092728A7 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0008642A1 (de) * | 1978-09-07 | 1980-03-19 | International Business Machines Corporation | Verfahren zum Dotieren von Siliciumkörpern mit Bor |
-
1970
- 1970-06-12 FR FR7021676A patent/FR2092728A7/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0008642A1 (de) * | 1978-09-07 | 1980-03-19 | International Business Machines Corporation | Verfahren zum Dotieren von Siliciumkörpern mit Bor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2092728B3 (enExample) | 1973-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3752711A (en) | Method of manufacturing an igfet and the product thereof | |
| Goldstein | Diffusion of cadmium and zinc in gallium arsenide | |
| GB1513332A (en) | Methods of making semiconductor devices | |
| GB1313829A (en) | Transistors and aproduction thereof | |
| GB1486099A (en) | Planar diffusion method for making integrated circuits | |
| GB1442693A (en) | Method of manufacturing a junction field effect transistor | |
| FR2092728A7 (en) | N-doped silicon - by phosphorus diffusion from phosphine | |
| GB1377699A (en) | Method of making a semiconductor device and a semiconductor device when made thereby | |
| US3614829A (en) | Method of forming high stability self-registered field effect transistors | |
| US2979429A (en) | Diffused transistor and method of making | |
| US3398029A (en) | Method of making semiconductor devices by diffusing and forming an oxide | |
| GB1053406A (enExample) | ||
| US3919006A (en) | Method of manufacturing a lateral transistor | |
| US3540950A (en) | Methods of manufacturing planar transistors | |
| JPS6464262A (en) | Mos transistor | |
| FR2092729A7 (en) | Arsenic diffusion in silicon - from arsine, nitrogen, oxygen mixtures giving low sheet resistivity | |
| US3375146A (en) | Method for producing a p-n junction in a monocrystalline semiconductor member by etching and diffusion | |
| JPS6157714B2 (enExample) | ||
| JPS5275268A (en) | Method of diffusing impurity into semiconductor | |
| JPS5244584A (en) | Method of treating semiconductor substrate | |
| JPS526080A (en) | Production method of semiconductor wafer | |
| JPS5626477A (en) | Variable-capacity diode manufacturing process | |
| FR2139667A1 (en) | Diffused base transistor - with a source of recombination centres | |
| JPS6417425A (en) | Manufacture of semiconductor device | |
| JPS5723280A (en) | Field effect type light detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |