FR2088515A1 - - Google Patents

Info

Publication number
FR2088515A1
FR2088515A1 FR7116900A FR7116900A FR2088515A1 FR 2088515 A1 FR2088515 A1 FR 2088515A1 FR 7116900 A FR7116900 A FR 7116900A FR 7116900 A FR7116900 A FR 7116900A FR 2088515 A1 FR2088515 A1 FR 2088515A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116900A
Other versions
FR2088515B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2088515A1 publication Critical patent/FR2088515A1/fr
Application granted granted Critical
Publication of FR2088515B1 publication Critical patent/FR2088515B1/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/20Programmable ROM [PROM] devices comprising field-effect components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
FR7116900A 1970-05-12 1971-05-11 Expired FR2088515B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2023219A DE2023219C3 (de) 1970-05-12 1970-05-12 Programmierbarer Halbleiter-Festwertspeicher

Publications (2)

Publication Number Publication Date
FR2088515A1 true FR2088515A1 (fr) 1972-01-07
FR2088515B1 FR2088515B1 (fr) 1976-02-06

Family

ID=5770900

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116900A Expired FR2088515B1 (fr) 1970-05-12 1971-05-11

Country Status (10)

Country Link
US (1) US3781825A (fr)
JP (1) JPS5620637B1 (fr)
AT (1) AT314229B (fr)
CA (1) CA958123A (fr)
CH (1) CH531773A (fr)
DE (1) DE2023219C3 (fr)
FR (1) FR2088515B1 (fr)
GB (1) GB1312171A (fr)
NL (1) NL7106319A (fr)
SE (1) SE379879C (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2197238A1 (fr) * 1972-06-21 1974-03-22 Ibm
FR2410336A1 (fr) * 1977-11-28 1979-06-22 Philips Nv Dispositif semi-conducteur a memoire permanente et procede pour fabriquer un tel dispositif
FR2471023A1 (fr) * 1979-12-07 1981-06-12 Ibm France Reseau matriciel d'elements semi-conducteurs
FR2485265A1 (fr) * 1980-05-08 1981-12-24 Philips Nv Dispositif semiconducteur programmable et son procede de fabrication
FR2490860A1 (fr) * 1980-09-24 1982-03-26 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
FR2520146A1 (fr) * 1982-01-15 1983-07-22 Thomson Csf Matrice d'elements a memoire integres, a diode schottky sur silicium polycristallin, et procede de fabrication

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931492A (en) * 1972-06-19 1976-01-06 Nippon Telegraph And Telephone Public Corporation Thermal print head
US3877050A (en) * 1973-08-27 1975-04-08 Signetics Corp Integrated circuit having guard ring schottky barrier diode and method
US4035907A (en) * 1973-08-27 1977-07-19 Signetics Corporation Integrated circuit having guard ring Schottky barrier diode and method
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4412308A (en) * 1981-06-15 1983-10-25 International Business Machines Corporation Programmable bipolar structures
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4849365A (en) * 1988-02-16 1989-07-18 Honeywell Inc. Selective integrated circuit interconnection
JPH01127808U (fr) * 1988-02-23 1989-08-31
US7111290B1 (en) 1999-01-28 2006-09-19 Ati International Srl Profiling program execution to identify frequently-executed portions and to assist binary translation
US6972470B2 (en) 2004-03-30 2005-12-06 Texas Instruments Incorporated Dual metal Schottky diode
GB2450037B (en) * 2004-03-30 2009-05-27 Texas Instruments Inc Schottky diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1585038A (fr) * 1967-05-30 1970-01-09

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1585038A (fr) * 1967-05-30 1970-01-09

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2197238A1 (fr) * 1972-06-21 1974-03-22 Ibm
FR2410336A1 (fr) * 1977-11-28 1979-06-22 Philips Nv Dispositif semi-conducteur a memoire permanente et procede pour fabriquer un tel dispositif
FR2471023A1 (fr) * 1979-12-07 1981-06-12 Ibm France Reseau matriciel d'elements semi-conducteurs
EP0030280A1 (fr) * 1979-12-07 1981-06-17 International Business Machines Corporation Réseau matriciel d'éléments semi-conducteurs
FR2485265A1 (fr) * 1980-05-08 1981-12-24 Philips Nv Dispositif semiconducteur programmable et son procede de fabrication
FR2490860A1 (fr) * 1980-09-24 1982-03-26 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
FR2520146A1 (fr) * 1982-01-15 1983-07-22 Thomson Csf Matrice d'elements a memoire integres, a diode schottky sur silicium polycristallin, et procede de fabrication
EP0084475A2 (fr) * 1982-01-15 1983-07-27 Thomson-Csf Matrice d'éléments à mémoire intégrés, à diode Schottky sur silicium polycristallin, et procédé de fabrication
EP0084475A3 (fr) * 1982-01-15 1983-08-10 Thomson-Csf Matrice d'éléments à mémoire intégrés, à diode Schottky sur silicium polycristallin, et procédé de fabrication

Also Published As

Publication number Publication date
DE2023219B2 (de) 1979-01-11
SE379879B (fr) 1975-10-20
JPS5620637B1 (fr) 1981-05-14
DE2023219C3 (de) 1979-09-06
CH531773A (de) 1972-12-15
CA958123A (en) 1974-11-19
SE379879C (sv) 1978-10-02
NL7106319A (fr) 1971-11-16
AT314229B (de) 1974-03-25
DE2023219A1 (de) 1971-12-02
GB1312171A (en) 1973-04-04
US3781825A (en) 1973-12-25
FR2088515B1 (fr) 1976-02-06

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Legal Events

Date Code Title Description
ST Notification of lapse