FR2088484A1 - - Google Patents

Info

Publication number
FR2088484A1
FR2088484A1 FR7116785A FR7116785A FR2088484A1 FR 2088484 A1 FR2088484 A1 FR 2088484A1 FR 7116785 A FR7116785 A FR 7116785A FR 7116785 A FR7116785 A FR 7116785A FR 2088484 A1 FR2088484 A1 FR 2088484A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116785A
Other versions
FR2088484B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2088484A1 publication Critical patent/FR2088484A1/fr
Application granted granted Critical
Publication of FR2088484B1 publication Critical patent/FR2088484B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7116785A 1970-05-11 1971-05-10 Expired FR2088484B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3636770A 1970-05-11 1970-05-11

Publications (2)

Publication Number Publication Date
FR2088484A1 true FR2088484A1 (fr) 1972-01-07
FR2088484B1 FR2088484B1 (fr) 1976-04-16

Family

ID=21888223

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116785A Expired FR2088484B1 (fr) 1970-05-11 1971-05-10

Country Status (9)

Country Link
US (1) US3647389A (fr)
JP (1) JPS5026422B1 (fr)
BE (1) BE766750A (fr)
CA (1) CA952413A (fr)
CH (1) CH569514A5 (fr)
DE (1) DE2122192C3 (fr)
FR (1) FR2088484B1 (fr)
GB (1) GB1311048A (fr)
IT (1) IT942100B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513274A1 (fr) * 1981-09-18 1983-03-25 Sumitomo Electric Industries Procede de dopage au bore d'un monocristal de gaas

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS6024078B2 (ja) * 1977-09-05 1985-06-11 株式会社東芝 ３−５族化合物半導体単結晶の製造装置
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
DE139157T1 (de) * 1983-08-31 1985-11-07 Research Development Corp. Of Japan, Tokio/Tokyo Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen.
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
WO2010053960A1 (fr) * 2008-11-07 2010-05-14 The Regents Of The University Of California Utilisation de composés, de gaz et de fluides contenant du bore pendant la croissance ammonothermale de cristaux de nitrure du groupe iii

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513274A1 (fr) * 1981-09-18 1983-03-25 Sumitomo Electric Industries Procede de dopage au bore d'un monocristal de gaas

Also Published As

Publication number Publication date
GB1311048A (en) 1973-03-21
DE2122192C3 (de) 1974-06-06
DE2122192B2 (de) 1973-10-18
BE766750A (fr) 1971-10-01
CH569514A5 (fr) 1975-11-28
DE2122192A1 (de) 1971-11-25
FR2088484B1 (fr) 1976-04-16
JPS5026422B1 (fr) 1975-09-01
US3647389A (en) 1972-03-07
IT942100B (it) 1973-03-20
CA952413A (en) 1974-08-06

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Legal Events

Date Code Title Description
ST Notification of lapse