FR2083349A1 - - Google Patents
Info
- Publication number
- FR2083349A1 FR2083349A1 FR7109219A FR7109219A FR2083349A1 FR 2083349 A1 FR2083349 A1 FR 2083349A1 FR 7109219 A FR7109219 A FR 7109219A FR 7109219 A FR7109219 A FR 7109219A FR 2083349 A1 FR2083349 A1 FR 2083349A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/1414—
-
- H10P32/171—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2030870A | 1970-03-17 | 1970-03-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2083349A1 true FR2083349A1 (cg-RX-API-DMAC10.html) | 1971-12-17 |
| FR2083349B1 FR2083349B1 (cg-RX-API-DMAC10.html) | 1974-02-15 |
Family
ID=21797887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR717109219A Expired FR2083349B1 (cg-RX-API-DMAC10.html) | 1970-03-17 | 1971-03-16 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3604986A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5128389B1 (cg-RX-API-DMAC10.html) |
| BE (1) | BE764261A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2112114C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2083349B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1341273A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7103420A (cg-RX-API-DMAC10.html) |
| SE (1) | SE357099B (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0062417A3 (en) * | 1981-03-25 | 1983-08-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device including a transistor and a capacitor and method for manufacturing it |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
| US3700979A (en) * | 1971-04-07 | 1972-10-24 | Rca Corp | Schottky barrier diode and method of making the same |
| US3900344A (en) * | 1973-03-23 | 1975-08-19 | Ibm | Novel integratable schottky barrier structure and method for the fabrication thereof |
| US4408216A (en) * | 1978-06-02 | 1983-10-04 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range |
| US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
| US5198372A (en) * | 1986-01-30 | 1993-03-30 | Texas Instruments Incorporated | Method for making a shallow junction bipolar transistor and transistor formed thereby |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1356197A (fr) * | 1962-06-29 | 1964-03-20 | Western Electric Co | Contact de semiconducteur |
| FR1381871A (fr) * | 1963-02-08 | 1964-12-14 | Int Standard Electric Corp | Méthode de fabrication de semi-conducteurs |
| FR1484390A (fr) * | 1965-06-23 | 1967-06-09 | Ion Physics Corp | Procédé de fabrication de dispositifs semi-conducteurs |
| FR1538798A (fr) * | 1966-10-27 | 1968-09-06 | Ibm | Procédé de métallisation |
| FR1551938A (cg-RX-API-DMAC10.html) * | 1966-09-12 | 1969-01-03 | ||
| NL6910772A (cg-RX-API-DMAC10.html) * | 1968-07-15 | 1970-01-19 | ||
| NL7005888A (cg-RX-API-DMAC10.html) * | 1969-04-25 | 1970-10-27 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USB421061I5 (cg-RX-API-DMAC10.html) * | 1964-12-24 | |||
| GB1093136A (en) * | 1965-08-27 | 1967-11-29 | Johnson Matthey Co Ltd | Improvements in and relating to the bonding together of metals or alloys |
| US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
| US3458778A (en) * | 1967-05-29 | 1969-07-29 | Microwave Ass | Silicon semiconductor with metal-silicide heterojunction |
-
1970
- 1970-03-17 US US20308A patent/US3604986A/en not_active Expired - Lifetime
-
1971
- 1971-03-09 SE SE02974/71A patent/SE357099B/xx unknown
- 1971-03-13 DE DE2112114A patent/DE2112114C3/de not_active Expired
- 1971-03-15 NL NL7103420A patent/NL7103420A/xx unknown
- 1971-03-15 BE BE764261A patent/BE764261A/xx unknown
- 1971-03-16 FR FR717109219A patent/FR2083349B1/fr not_active Expired
- 1971-03-17 JP JP46014444A patent/JPS5128389B1/ja active Pending
- 1971-04-19 GB GB2403071*A patent/GB1341273A/en not_active Expired
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1356197A (fr) * | 1962-06-29 | 1964-03-20 | Western Electric Co | Contact de semiconducteur |
| FR1381871A (fr) * | 1963-02-08 | 1964-12-14 | Int Standard Electric Corp | Méthode de fabrication de semi-conducteurs |
| FR1484390A (fr) * | 1965-06-23 | 1967-06-09 | Ion Physics Corp | Procédé de fabrication de dispositifs semi-conducteurs |
| FR1551938A (cg-RX-API-DMAC10.html) * | 1966-09-12 | 1969-01-03 | ||
| FR1538798A (fr) * | 1966-10-27 | 1968-09-06 | Ibm | Procédé de métallisation |
| NL6910772A (cg-RX-API-DMAC10.html) * | 1968-07-15 | 1970-01-19 | ||
| NL7005888A (cg-RX-API-DMAC10.html) * | 1969-04-25 | 1970-10-27 |
Non-Patent Citations (3)
| Title |
|---|
| (REVUE AMERICAINE PROCEEDINGS OF THE IEEE VOL.57,MAI 1969,PAGES 812-13 M.P.LEPSELTER ET AL:" SB-IGFET,II:AN ION IMPLANTED IGFET USING SCHOTTKY BARRIERS") * |
| REVUE AMERICAINE PROCEEDINGS OF THE IEEE VOL.57,MAI 1969,PAGES 812-13 M.P.LEPSELTER ET AL:" * |
| SB-IGFET,II:AN ION IMPLANTED IGFET USING SCHOTTKY BARRIERS") * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0062417A3 (en) * | 1981-03-25 | 1983-08-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device including a transistor and a capacitor and method for manufacturing it |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1341273A (en) | 1973-12-19 |
| DE2112114B2 (de) | 1973-04-05 |
| DE2112114A1 (de) | 1971-10-07 |
| JPS5128389B1 (cg-RX-API-DMAC10.html) | 1976-08-18 |
| BE764261A (fr) | 1971-08-02 |
| FR2083349B1 (cg-RX-API-DMAC10.html) | 1974-02-15 |
| US3604986A (en) | 1971-09-14 |
| DE2112114C3 (de) | 1980-01-31 |
| NL7103420A (cg-RX-API-DMAC10.html) | 1971-09-21 |
| SE357099B (cg-RX-API-DMAC10.html) | 1973-06-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |